Infineon Technologies - IRGP4266-EPBF

  1. Home
  2. Infineon Technologies - IRGP4266-EPBF
IRGP4266-EPBF by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number IRGP4266-EPBF
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 140 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet IRGP4266-EPBF Datasheet
In Stock965
NAME DESCRIPTION
Maximum Collector Current (IC): 140 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Rise Time (tr): 105 ns
Maximum Gate-Emitter Threshold Voltage: 7.7 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Maximum Power Dissipation (Abs): 450 W
Maximum Collector-Emitter Voltage: 650 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Fall Time (tf): 55 ns
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
965 $4.180 $4,033.700

Popular Products

Category Top Products

IXXX300N60B3 by IXYS Corporation

IXXX300N60B3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 550 A; Maximum Collector-Emitter Voltage: 600 V;
IXXH30N65B4 by Littelfuse

IXXH30N65B4

Littelfuse

IXXH30N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 230W power dissipation. Ideal for POWER CONTROL applications, it has a fast turn-off time of 206ns and low VCEsat of 2.1V. The package style is FLANGE MOUNT with a RECTANGULAR shape and THROUGH-HOLE terminals.
F1225R12KT4GBOSA1 by Infineon Technologies

F1225R12KT4GBOSA1

Infineon Technologies

F1225R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 12 elements, 1200V max collector-emitter voltage, and 55ns nominal turn on time. It is used for power control applications due to its complex configuration and UL recognized reference standard.
APT50GR120JD30 by Microchip Technology

APT50GR120JD30

Microchip Technology

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
IRG4BC30UDPBF by International Rectifier

IRG4BC30UDPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 1;
V23990-K230-F40-/0B/-PM by Vincotech

V23990-K230-F40-/0B/-PM

Vincotech

Vincotech V23990-K230-F40-/0B/-PM is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max VCEsat of 2.2V and can handle up to 88A IC. Ideal for power control applications, this IGBT operates at temperatures up to 175°C with a collector-emitter voltage of 1200V.
FGH40N60SFDTU by Onsemi

FGH40N60SFDTU

Onsemi

FGH40N60SFDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a 90ns fall time, 170ns turn off time, and can handle up to 290W power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.
FF450R12ME4EB11BPSA1 by Infineon Technologies

FF450R12ME4EB11BPSA1

Infineon Technologies

FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
CM600DX-24T by Mitsubishi Electric

CM600DX-24T

Mitsubishi Electric

The Mitsubishi Electric CM600DX-24T is a N-CHANNEL IGBT with 2 elements, built-in diode and thermistor. It has a max VCEsat of 2.05V and can handle up to 600A collector current. Ideal for power control applications, it operates b/w -40 to 150 °C with UL recognition.
APT85GR120JD60 by Microsemi

APT85GR120JD60

Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 116 A; Maximum Operating Temperature: 150 Cel;
IKW08T120FKSA1 by Infineon Technologies

IKW08T120FKSA1

Infineon Technologies

IKW08T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 16A. It has a nominal turn-off time of 710ns and nominal turn-on time of 66ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
APT85GR120B2 by Microchip Technology

APT85GR120B2

Microchip Technology

Microchip Technology's APT85GR120B2 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 170A max collector current. Ideal for motor control applications, it has a 445ns turn-off time, 113ns turn-on time, and can handle up to 962W power dissipation.
APT200GN60J by Microsemi

APT200GN60J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 682 W; Maximum Collector Current (IC): 250 A; Terminal Position: UPPER;
IXXX200N60B3 by IXYS Corporation

IXXX200N60B3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 380 A; Maximum Collector-Emitter Voltage: 600 V;
STGW20NC60VD by STMicroelectronics

STGW20NC60VD

STMicroelectronics

STGW20NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 280ns.
IXYH50N120C3D1 by IXYS Corporation

IXYH50N120C3D1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Terminal Finish: MATTE TIN;
HGTD3N60C3S9A by Fairchild Semiconductor

HGTD3N60C3S9A

Fairchild Semiconductor

Fairchild Semiconductor's HGTD3N60C3S9A is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 6A max collector current. It has a turn-off time of 455ns, turn-on time of 15ns, and fall time of 275ns. Ideal for motor control applications due to its high power dissipation capability of 33W in a small outline package style.
ISL9V3040D3ST by Onsemi

ISL9V3040D3ST

Onsemi

ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
FF600R12ME4EB11BOSA1 by Infineon Technologies

FF600R12ME4EB11BOSA1

Infineon Technologies

Infineon's FF600R12ME4EB11BOSA1 is a N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has VCEsat of 2.1V, toff of 700ns, and VCEmax of 1200V. Ideal for power control applications due to its common emitter configuration and max operating temp of 150°C.
IKW75N65ES5XKSA1 by Infineon Technologies

IKW75N65ES5XKSA1

Infineon Technologies

IKW75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 233ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Features THROUGH-HOLE terminals in a RECTANGULAR package style.