54 W Insulated Gate Bipolar Transistors (IGBT) 5

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
NGTB15N60R2FG	Onsemi	N-CHANNEL		NO	54 W	24 A											Insulated Gate BIP Transistors	175 Cel		600 V		20 V		7 V	MATTE TIN								e3
IXGP7N60B	Littelfuse	N-CHANNEL	SINGLE	NO	54 W	14 A	PLASTIC/EPOXY	POWER CONTROL	2 V	THROUGH-HOLE	RECTANGULAR	1	250 ns	250 ns	3	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	450 ns	5.5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				19 ns
IXGP8N100	Littelfuse	N-CHANNEL	SINGLE	NO	54 W	16 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1	900 ns	990 ns	3	FLANGE MOUNT		150 Cel	SILICON	1000 V	-55 Cel	20 V	1900 ns	5 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB				45 ns
IXGA8N100	Littelfuse	N-CHANNEL	SINGLE	YES	54 W	16 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1	900 ns	990 ns	2	SMALL OUTLINE		150 Cel	SILICON	1000 V	-55 Cel	20 V	1900 ns	5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-263AA	e3	10	260	45 ns
IXGA7N60B	Littelfuse	N-CHANNEL	SINGLE	YES	54 W	14 A	PLASTIC/EPOXY	POWER CONTROL		GULL WING	RECTANGULAR	1		450 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	Matte Tin (Sn)	SINGLE	R-PSSO-G2	1	COLLECTOR	Not Qualified	FAST	TO-263AB	e3	10	260	25 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.