Onsemi - NGTB15N60R2FG

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NGTB15N60R2FG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NGTB15N60R2FG
Description N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; Maximum Collector Current (IC): 24 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 600 V;
Datasheet NGTB15N60R2FG Datasheet
In Stock1,663
NAME DESCRIPTION
Maximum Collector Current (IC): 24 A
Maximum Power Dissipation (Abs): 54 W
Maximum Collector-Emitter Voltage: 600 V
Maximum Gate-Emitter Threshold Voltage: 7 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: MATTE TIN
JESD-609 Code: e3
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Pricing (USD)

Qty. Unit Price Ext. Price
1,663 $0.932 $1,549.916

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