70 W Insulated Gate Bipolar Transistors (IGBT) 27

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)
IKP08N65H5XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	18 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		130 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			16 ns
IGW08T120	Infineon Technologies	N-CHANNEL	SINGLE	NO	70 W	16 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AD	e3			66 ns
STGD7NC60HT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	25 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1		221 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5.75 V	Matte Tin (Sn) - annealed	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260	25.5 ns
IKP08N65F5XKSA1	Infineon Technologies	N-CHANNEL		NO	70 W	18 A												Insulated Gate BIP Transistors		175 Cel		650 V			20 V		4.8 V	TIN								e3
TIG110BF	Onsemi	N-CHANNEL	SINGLE	NO	70 W	27 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		450 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			30 V		6 V		SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				300 ns
HGTP3N60A4	Onsemi	N-CHANNEL	SINGLE	NO	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	THROUGH-HOLE	RECTANGULAR	1	100 ns	180 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-220AB	e3			17.5 ns
HGTD3N60A4S	Onsemi	N-CHANNEL	SINGLE	YES	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	GULL WING	RECTANGULAR	1	100 ns	180 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR		LOW CONDUCTION LOSS	TO-252AA				17.5 ns
HGT1S3N60A4DS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	17 A	PLASTIC/EPOXY	POWER CONTROL	15 ns	2.7 V	GULL WING	RECTANGULAR	1	100 ns	180 ns	2	SMALL OUTLINE			150 Cel	SILICON	600 V	23 ns	-55 Cel	20 V	265 ns	7 V		SINGLE	R-PSSO-G2		COLLECTOR			TO-263AB				17.5 ns
STGD7NB60MT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		670 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			19 ns
STGD7NB60FT4	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		505 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0			23 ns
STGD7NB60F	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	14 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		505 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3			23 ns
STGP3NB60K	STMicroelectronics	N-CHANNEL	SINGLE	NO	70 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		7 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			19 ns
STGB3NB60SDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2	1		Not Qualified		TO-263AB	e3			275 ns
STGB3NB60HDT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		168 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB	e3			16 ns
STGP3NB60H	STMicroelectronics	N-CHANNEL	SINGLE	NO	70 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		168 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	TIN LEAD	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e0			46 ns
STGB3NB60SD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	6 A	PLASTIC/EPOXY	MOTOR CONTROL			GULL WING	RECTANGULAR	1		4800 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		175 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSSO-G2			Not Qualified		TO-263	e3			275 ns
STGP3NB60HD	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	10 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1		168 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V		5 V	MATTE TIN	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			16 ns
IKP08N65F5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	18 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		163 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			15 ns
IKP08N65H5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	18 A	PLASTIC/EPOXY	POWER CONTROL		2.1 V	THROUGH-HOLE	RECTANGULAR	1		130 ns	3	FLANGE MOUNT			175 Cel	SILICON	650 V		-40 Cel	20 V		4.8 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-220AB	e3			16 ns
IKW08T120	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	16 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		710 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V		6.5 V	TIN	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified		TO-247AC	e3			66 ns
GT15J311	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	15 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1	300 ns	500 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT15J331	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL			THROUGH-HOLE	RECTANGULAR	1	230 ns	470 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified						260 ns
GT15J311(SM)	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	15 A	PLASTIC/EPOXY	POWER CONTROL			GULL WING	RECTANGULAR	1	300 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors		150 Cel	SILICON	600 V			20 V				SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED			NOT SPECIFIED	NOT SPECIFIED	400 ns
GT15J103(SM)	Toshiba	N-CHANNEL	SINGLE	YES	70 W	15 A	PLASTIC/EPOXY	MOTOR CONTROL	600 ns	4 V	GULL WING	RECTANGULAR	1	350 ns	500 ns	2	SMALL OUTLINE	Insulated Gate BIP Transistors	70 W	150 Cel	SILICON	600 V			20 V		6 V		SINGLE	R-PSSO-G2		COLLECTOR	Not Qualified	HIGH SPEED					400 ns
MUBW15-12A6	Littelfuse	N-CHANNEL	COMPLEX	NO	70 W	18 A	UNSPECIFIED	POWER CONTROL		2.9 V	UNSPECIFIED	RECTANGULAR	7		770 ns	25	FLANGE MOUNT	Insulated Gate BIP Transistors		150 Cel	SILICON	1200 V			20 V			MATTE TIN	UPPER	R-XUFM-X25		ISOLATED	Not Qualified	FAST		e3			120 ns
IXBF9N140	Littelfuse	N-CHANNEL	SINGLE	NO	70 W	7 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1400 V			20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			260 ns
IXBF9N160	Littelfuse	N-CHANNEL	SINGLE	NO	70 W	7 A	PLASTIC/EPOXY	POWER CONTROL			THROUGH-HOLE	RECTANGULAR	1		220 ns	3	IN-LINE	Insulated Gate BIP Transistors		150 Cel	SILICON	1600 V			20 V		8 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		ISOLATED	Not Qualified	HIGH RELIABILITY		e1			260 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.