830 W Insulated Gate Bipolar Transistors (IGBT) 30

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum VCEsat	Terminal Form	Package Shape	No. of Elements	Maximum Fall Time (tf)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Transistor Element Material	Maximum Collector-Emitter Voltage	Minimum Operating Temperature	Maximum Gate-Emitter Voltage	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Reference Standard
IXYN100N120C3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	152 A	UNSPECIFIED	POWER CONTROL		UNSPECIFIED	RECTANGULAR	1		265 ns	4	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V		5 V		UPPER	R-XUFM-X4		ISOLATED		AVALANCHE RATED					122 ns	UL RECOGNIZED
CM200DU-12NFH	Mitsubishi Electric	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	830 W	200 A	UNSPECIFIED	POWER CONTROL	2.7 V	UNSPECIFIED	RECTANGULAR	2			7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	600 V		20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	260
IXXH100N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	220 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	THROUGH-HOLE	RECTANGULAR	1		350 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	92 ns
IXYH100N65C3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	200 A	PLASTIC/EPOXY	POWER CONTROL	2.3 V	THROUGH-HOLE	RECTANGULAR	1		200 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	62 ns
IXGN400N60A3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	400 A	PLASTIC/EPOXY	POWER CONTROL	1.25 V	UNSPECIFIED	RECTANGULAR	1		840 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					124 ns
IXGX100N170	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	170 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		720 ns	3	IN-LINE	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSIP-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS		e1			285 ns
IXYH80N90C3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	165 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	THROUGH-HOLE	RECTANGULAR	1		201 ns	3	FLANGE MOUNT		175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	134 ns
IXGN200N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	300 A	PLASTIC/EPOXY	POWER CONTROL	1.5 V	UNSPECIFIED	RECTANGULAR	1	300 ns	493 ns	4	FLANGE MOUNT		150 Cel	SILICON	600 V	-55 Cel	20 V	750 ns	5 V	NICKEL	UPPER	R-PUFM-X4		ISOLATED							127 ns	UL RECOGNIZED
IXXH100N60C3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	190 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		220 ns	3	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSFM-T3		COLLECTOR			TO-247AD	e3	10	260	95 ns
IXYK100N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	225 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1		358 ns	3	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSFM-T3		COLLECTOR			TO-264AA				65 ns
IXYN110N120A4	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	275 A	PLASTIC/EPOXY	POWER CONTROL	1.8 V	UNSPECIFIED	RECTANGULAR	1		850 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		UPPER	R-PUFM-X4		ISOLATED							78 ns	UL RECOGNIZED
IXYT80N90C3	Littelfuse	N-CHANNEL	SINGLE	YES	830 W	165 A	PLASTIC/EPOXY	POWER CONTROL	2.7 V	GULL WING	RECTANGULAR	1		201 ns	2	SMALL OUTLINE		175 Cel	SILICON	900 V	-55 Cel	20 V		5.5 V	MATTE TIN	SINGLE	R-PSSO-G2	1	COLLECTOR			TO-268AA	e3	10	260	134 ns
BSM100GAL120DLCK	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	205 A	UNSPECIFIED	POWER CONTROL	2.6 V	UNSPECIFIED	RECTANGULAR	1		480 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	175 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
BSM100GB120DLCK	Infineon Technologies	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	830 W	205 A	UNSPECIFIED	POWER CONTROL	2.6 V	UNSPECIFIED	RECTANGULAR	2		480 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	110 ns
GT8G151(TE12L1)	Toshiba	N-CHANNEL		YES	830 W												Insulated Gate BIP Transistors	150 Cel		400 V		4 V
GT8G151(TE12L)	Toshiba	N-CHANNEL		YES	830 W												Insulated Gate BIP Transistors	150 Cel		400 V		4 V
MBM150GR12	Renesas Electronics			NO	830 W	150 A	PLASTIC/EPOXY		2.8 V	UNSPECIFIED	RECTANGULAR	1			7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel		1200 V		20 V				UPPER	R-PUFM-X7			Not Qualified
MID150-12A4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	180 A	UNSPECIFIED	POWER CONTROL	3 V	UNSPECIFIED	RECTANGULAR	1		570 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns	UL RECOGNIZED
MDI150-12A4	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	180 A	UNSPECIFIED	POWER CONTROL	3 V	UNSPECIFIED	RECTANGULAR	1		570 ns	5	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X5		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns	UL RECOGNIZED
MII150-12A4	Littelfuse	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	NO	830 W	180 A	UNSPECIFIED	MOTOR CONTROL	3 V	UNSPECIFIED	RECTANGULAR	2		570 ns	7	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1200 V		20 V				UPPER	R-XUFM-X7		ISOLATED	Not Qualified				NOT SPECIFIED	NOT SPECIFIED	170 ns	UL RECOGNIZED
IXYN120N65C3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	190 A	PLASTIC/EPOXY	POWER CONTROL	2.8 V	UNSPECIFIED	RECTANGULAR	1		173 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		UPPER	R-PUFM-X4		ISOLATED							57 ns	UL RECOGNIZED
IXGX120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	200 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		420 ns	3	IN-LINE		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					124 ns
IXYN150N60B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	250 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	UNSPECIFIED	RECTANGULAR	1		330 ns	4	FLANGE MOUNT		175 Cel	SILICON	600 V	-55 Cel	20 V		5.5 V		UPPER	R-PUFM-X4		ISOLATED		LOW CONDUCTION LOSS					110 ns	UL RECOGNIZED
IXYN120N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	250 A	PLASTIC/EPOXY	POWER CONTROL	1.9 V	UNSPECIFIED	RECTANGULAR	1		422 ns	4	FLANGE MOUNT		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		UPPER	R-PUFM-X4		ISOLATED							60 ns	UL RECOGNIZED
IXGX120N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		1365 ns	3	IN-LINE		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V		SINGLE	R-PSIP-T3		COLLECTOR		LOW CONDUCTION LOSS					105 ns
IXGK100N170	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	170 A	PLASTIC/EPOXY	POWER CONTROL		THROUGH-HOLE	RECTANGULAR	1		720 ns	3	FLANGE MOUNT	Insulated Gate BIP Transistors	150 Cel	SILICON	1700 V		20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR	Not Qualified	LOW CONDUCTION LOSS	TO-264AA	e1	10	260	285 ns
IXGK120N120A3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	240 A	PLASTIC/EPOXY	POWER CONTROL	2.2 V	THROUGH-HOLE	RECTANGULAR	1		1365 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	105 ns
IXGK120N120B3	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	200 A	PLASTIC/EPOXY	POWER CONTROL	3 V	THROUGH-HOLE	RECTANGULAR	1		885 ns	3	FLANGE MOUNT		150 Cel	SILICON	1200 V	-55 Cel	20 V		5 V	TIN SILVER COPPER	SINGLE	R-PSFM-T3		COLLECTOR		LOW CONDUCTION LOSS	TO-264AA	e1	10	260	122 ns
IXYN110N120C4	Littelfuse	N-CHANNEL	SINGLE	NO	830 W	220 A	PLASTIC/EPOXY	POWER CONTROL	2.4 V	UNSPECIFIED	RECTANGULAR	1		357 ns	4	FLANGE MOUNT		175 Cel	SILICON	1200 V	-55 Cel	20 V		6.5 V		UPPER	R-PUFM-X4		ISOLATED							88 ns	UL RECOGNIZED
IXYX100N65B3D1	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	830 W	225 A	PLASTIC/EPOXY	POWER CONTROL	1.85 V	THROUGH-HOLE	RECTANGULAR	1		358 ns	3	IN-LINE		175 Cel	SILICON	650 V	-55 Cel	20 V		6 V		SINGLE	R-PSIP-T3		COLLECTOR							65 ns

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.