Toshiba - GT8G151(TE12L1)

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GT8G151(TE12L1) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number GT8G151(TE12L1)
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 830 W; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 4 V; Maximum Collector-Emitter Voltage: 400 V;
Datasheet GT8G151(TE12L1) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 830 W
Maximum Collector-Emitter Voltage: 400 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 4 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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