Diodes Incorporated Insulated Gate Bipolar Transistors (IGBT) 13

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

DGTD120T25S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

348 W

50 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

367 ns

3

FLANGE MOUNT

175 Cel

SILICON

1200 V

-40 Cel

20 V

7 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

110 ns

ZCN9150ASTOF

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

ZCN9150A

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

475 ns

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

14 ns

ZCN9150ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

DGTD120T40S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

357 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

387 ns

3

FLANGE MOUNT

150 Cel

SILICON

1200 V

-55 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

132 ns

DGTD65T60S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

428 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

187 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

HIGH SPEED SWITCHING

TO-247

e3

260

83 ns

DGTD65T50S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

375 W

100 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

399 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.2 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

117 ns

DGTD65T40S1PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

341 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.4 V

THROUGH-HOLE

RECTANGULAR

1

285 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

112 ns

MIL-STD-202

ZCN9150ASTOA

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

ZCN9150ASTOB

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

DGTD65T40S2PT

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

80 A

PLASTIC/EPOXY

POWER CONTROL

2.3 V

THROUGH-HOLE

RECTANGULAR

1

162 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

TO-247

e3

260

48 ns

DGTD65T15H2TF

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

48 W

30 A

PLASTIC/EPOXY

MOTOR CONTROL

2 V

THROUGH-HOLE

RECTANGULAR

1

280 ns

3

FLANGE MOUNT

175 Cel

SILICON

650 V

-40 Cel

20 V

6.5 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

30

260

46 ns

ZCN9150ASTOE

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.32 A

PLASTIC/EPOXY

POWER CONTROL

WIRE

ROUND

1

3

CYLINDRICAL

125 Cel

SILICON

500 V

MATTE TIN

BOTTOM

O-PBCY-W3

Not Qualified

FAST

e3

NOT SPECIFIED

NOT SPECIFIED

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.