Image shown is a representation only.
| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DGTD65T50S1PT |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; |
| Datasheet | DGTD65T50S1PT Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 100 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | POWER CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 6.2 V |
| Surface Mount: | NO |
| Terminal Finish: | MATTE TIN |
| Nominal Turn Off Time (toff): | 399 ns |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 375 W |
| Terminal Position: | SINGLE |
| Nominal Turn On Time (ton): | 117 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 175 Cel |
| JEDEC-95 Code: | TO-247 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 650 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Peak Reflow Temperature (C): | 260 |
| Maximum VCEsat: | 2.4 V |
