VS-GT55LA120UX by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	VS-GT55LA120UX
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 291 W; Maximum Collector Current (IC): 68 A; Terminal Position: UPPER;
Datasheet	VS-GT55LA120UX Datasheet
In Stock	154

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	68 A
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	7.6 V
Surface Mount:	NO
Nominal Turn Off Time (toff):	260 ns
No. of Terminals:	4
Maximum Power Dissipation (Abs):	291 W
Terminal Position:	UPPER
Nominal Turn On Time (ton):	19 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Other Names:	112-VS-GT55LA120UX
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Maximum Collector-Emitter Voltage:	1200 V
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	UL RECOGNIZED

Pricing (USD)

Qty.	Unit Price	Ext. Price
154	-	-

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