NXP Semiconductors Insulated Gate Bipolar Transistors (IGBT) 12

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Emitter Current Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Reference Standard

BUK854-800A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

600 ns

3

FLANGE MOUNT

150 Cel

SILICON

800 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

50 ns

BUK866-400IZ

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

19000 ns

2

SMALL OUTLINE

SILICON

500 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

BUK854-800A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

12 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

800 ns

200 ns

3

FLANGE MOUNT

85 W

150 Cel

SILICON

800 V

30 V

350 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

50 ns

BUK856-800A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

THROUGH-HOLE

RECTANGULAR

1

700 ns

3

FLANGE MOUNT

150 Cel

SILICON

800 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

FAST SWITCHING

TO-220AB

70 ns

BUK856-400IZ,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

THROUGH-HOLE

RECTANGULAR

1

19000 ns

3

FLANGE MOUNT

150 Cel

SILICON

500 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

TO-220AB

BUK856-800A

NXP Semiconductors

N-CHANNEL

SINGLE

NO

24 A

PLASTIC/EPOXY

MOTOR CONTROL

3.5 V

THROUGH-HOLE

RECTANGULAR

1

800 ns

300 ns

3

FLANGE MOUNT

125 W

150 Cel

SILICON

800 V

30 V

450 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

70 ns

BUK866-400IZ,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

19000 ns

2

SMALL OUTLINE

150 Cel

SILICON

500 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

BUK856-450IX

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

1.8 V

THROUGH-HOLE

RECTANGULAR

1

8000 ns

5500 ns

3

FLANGE MOUNT

125 W

175 Cel

SILICON

12 V

8000 ns

4.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

BUK866-400IZ/T3

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

19000 ns

2

SMALL OUTLINE

SILICON

500 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

BUK856-400IZ

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2.2 V

THROUGH-HOLE

RECTANGULAR

1

10000 ns

13000 ns

3

FLANGE MOUNT

Insulated Gate BIP Transistors

125 W

150 Cel

SILICON

500 V

12 V

18000 ns

2 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

VOLTAGE CLAMPING

TO-220AB

BUK866-400IZT/R

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

20 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

GULL WING

RECTANGULAR

1

19000 ns

2

SMALL OUTLINE

SILICON

500 V

SINGLE

R-PSSO-G2

COLLECTOR

Not Qualified

LOGIC LEVEL, VOLTAGE CLAMPING

BUK854-500IS

NXP Semiconductors

N-CHANNEL

SINGLE

NO

15 A

PLASTIC/EPOXY

AUTOMOTIVE IGNITION

2 V

THROUGH-HOLE

RECTANGULAR

1

6000 ns

3500 ns

3

FLANGE MOUNT

85 W

150 Cel

SILICON

500 V

30 V

4500 ns

5.5 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

Insulated Gate Bipolar Transistors (IGBT)

Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.

The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.

The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.

IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.