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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BUK856-450IX |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Qualification: Not Qualified; No. of Elements: 1; |
| Datasheet | BUK856-450IX Datasheet |
| In Stock | 2,003 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 15 A |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AUTOMOTIVE IGNITION |
| Maximum Gate-Emitter Threshold Voltage: | 4.5 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 5500 ns |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 8000 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 125 W |
| Maximum Fall Time (tf): | 8000 ns |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| Qualification: | Not Qualified |
| Additional Features: | VOLTAGE CLAMPING |
| Maximum Gate-Emitter Voltage: | 12 V |
| Maximum VCEsat: | 1.8 V |
