.08 A Other Function Transistors 77

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Moisture Sensitivity Level (MSL)	JESD-609 Code	Peak Reflow Temperature (C)
2SC3143	Onsemi	NPN	SINGLE	YES		.2 W	.08 A	1	Other Transistors	60	125 Cel
2SC4856	Onsemi	NPN	SINGLE	YES		.15 W	.08 A	1	Other Transistors
2SC4858	Onsemi	NPN	SINGLE	YES		.2 W	.08 A	1	Other Transistors
2SC4859	Onsemi	NPN	SINGLE	YES		.8 W	.08 A	1	Other Transistors
2SC4857	Onsemi	NPN	SINGLE	YES		.2 W	.08 A	1	Other Transistors
2SA1257	Onsemi	PNP	SINGLE	YES	130 MHz	.2 W	.08 A	1	Other Transistors	60	125 Cel
BFP540F-E6433	Infineon Technologies	NPN	SINGLE	YES	21000 MHz	.25 W	.08 A	1	Other Transistors	50	150 Cel
BF772W	Infineon Technologies	NPN	SINGLE	YES		.3 W	.08 A	1	Other Transistors
BFQ193	Infineon Technologies	NPN	SINGLE	YES		.5 W	.08 A	1	Other Transistors		150 Cel	Tin/Lead (Sn/Pb)		e0
BFP540FESD-E6327	Infineon Technologies	NPN	SINGLE	YES	21000 MHz	.25 W	.08 A	1	Other Transistors	50	150 Cel		1		260
BFP193-E6433	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	50	150 Cel
BFR193W-E6433	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	50	150 Cel
BFP193W-E6433	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	50	150 Cel
BFP540FESD-H6327	Infineon Technologies	NPN	SINGLE	YES	21000 MHz	.25 W	.08 A	1	Other Transistors	50	150 Cel	MATTE TIN		e3
BFR193-E6433	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	70	150 Cel
BFY193C(H)	Infineon Technologies	NPN	SINGLE	YES	6500 MHz	.58 W	.08 A	1	Other Transistors	50	200 Cel
BFR193F-E6327	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	70	150 Cel		1		260
BF772-E6327	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	50	150 Cel
BFR193F-E6433	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	70	150 Cel
BFP620-E6433	Infineon Technologies	NPN	SINGLE	YES		.185 W	.08 A	1	Other Transistors	110	150 Cel	Tin/Lead (Sn/Pb)		e0
BFY193C(S)	Infineon Technologies	NPN	SINGLE	YES	6500 MHz	.58 W	.08 A	1	Other Transistors	50	200 Cel
BFP540FE6327	Infineon Technologies	NPN	SINGLE	YES	21000 MHz	.25 W	.08 A	1	Other Transistors	50	150 Cel		1		260
BFP540FESD-E6433	Infineon Technologies	NPN	SINGLE	YES	21000 MHz	.25 W	.08 A	1	Other Transistors	50	150 Cel
BFP620F-E6433	Infineon Technologies	NPN	SINGLE	YES		.185 W	.08 A	1	Other Transistors	110	150 Cel
BF772-E6433	Infineon Technologies	NPN	SINGLE	YES	6000 MHz	.58 W	.08 A	1	Other Transistors	50	150 Cel
BFR380TE6327	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.38 W	.08 A	1	Other Transistors	60	150 Cel				260
BFR380F-E6433	Infineon Technologies	NPN	SINGLE	YES	11000 MHz	.38 W	.08 A	1	Other Transistors	90	150 Cel
BFR380T-E6433	Infineon Technologies	NPN	SINGLE	YES	10000 MHz	.38 W	.08 A	1	Other Transistors	60	150 Cel
BFR380F-E6327	Infineon Technologies	NPN	SINGLE	YES	11000 MHz	.38 W	.08 A	1	Other Transistors	90	150 Cel		1		260
HN3C10FT(TE85L)	Toshiba	NPN		YES	5000 MHz		.08 A		Other Transistors	80	125 Cel
MT3S19TU(TE85L)	Toshiba	NPN	SINGLE	YES	9000 MHz	.9 W	.08 A	1	Other Transistors	100	150 Cel
2SC5087R(TE85L,F)	Toshiba	NPN	SINGLE	YES	6000 MHz	.15 W	.08 A	1	Other Transistors	120	125 Cel
2SC5085O(TE85L)	Toshiba	NPN	SINGLE	YES	5000 MHz	.1 W	.08 A	1	Other Transistors	80	125 Cel
MT3S19(TE85L)	Toshiba	NPN	SINGLE	YES	10000 MHz	.8 W	.08 A	1	Other Transistors	100	150 Cel
2SC2114	Toshiba	NPN	SINGLE	YES		.225 W	.08 A	1	Other Transistors		125 Cel	Tin/Lead (Sn/Pb)		e0
MT3S22P(TE12L)	Toshiba	NPN	SINGLE	YES	6500 MHz	1.8 W	.08 A	1	Other Transistors	100	150 Cel
MT3S19R(TE85L)	Toshiba	NPN	SINGLE	YES	11500 MHz	.32 W	.08 A	1	Other Transistors	100	150 Cel
2SC5088Y(TE85L)	Toshiba	NPN	SINGLE	YES		.1 W	.08 A	1	Other Transistors	120	125 Cel
HN9C03FT(TE85L)	Toshiba	NPN		YES	5000 MHz		.08 A		Other Transistors	80	125 Cel	Tin/Lead (Sn/Pb)		e0
2SC3606(TE85L)	Toshiba	NPN	SINGLE	YES	7000 MHz	.15 W	.08 A	1	Other Transistors	30	125 Cel
2SC5084Y(TE85L)	Toshiba	NPN	SINGLE	YES	5000 MHz	.15 W	.08 A	1	Other Transistors	120	125 Cel
2SC3445	Toshiba	NPN	SINGLE	YES		.15 W	.08 A	1	Other Transistors		125 Cel	Tin/Lead (Sn/Pb)		e0
2SC5088O(TE85L)	Toshiba	NPN	SINGLE	YES		.1 W	.08 A	1	Other Transistors	80	125 Cel
MT3S20R(TE85L)	Toshiba	NPN	SINGLE	YES	5500 MHz	.32 W	.08 A	1	Other Transistors	100	150 Cel
HN3C10FU(TE85L)	Toshiba	NPN		YES	5000 MHz		.08 A		Other Transistors	80	125 Cel
2SC1558	Toshiba	NPN	SINGLE	YES		.25 W	.08 A	1	Other Transistors		175 Cel	Tin/Lead (Sn/Pb)		e0
2SC5084Y(TE85L,F)	Toshiba	NPN	SINGLE	YES	5000 MHz	.15 W	.08 A	1	Other Transistors	120	125 Cel
2SC2876	Toshiba	NPN	SINGLE	YES	7000 MHz	.2 W	.08 A	1	Other Transistors	30	125 Cel	Tin/Lead (Sn/Pb)		e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.