Onsemi - 2SC4858

  1. Home
  2. Onsemi - 2SC4858
2SC4858 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC4858
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1;
Datasheet 2SC4858 Datasheet
In Stock1,409
NAME DESCRIPTION
Maximum Collector Current (IC): .08 A
Maximum Power Dissipation (Abs): .2 W
Configuration: SINGLE
No. of Elements: 1
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,409 - -

Popular Products

Category Top Products

BC846B by North American Philips Discrete Products Div

BC846B

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BD138 by Inchange Semiconductor

BD138

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC856B by Shanghai Lunsure Electronic Technology

BC856B

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC856B by Jiangsu Changjiang Electronics Technology

BC856B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP117 by Tt Electronics Plc

TIP117

Tt Electronics Plc

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
FQP27P06_SW82127 by Fairchild Semiconductor

FQP27P06_SW82127

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TIP32C by Boca Semiconductor

TIP32C

Boca Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BC817-16 by Sprague Electric

BC817-16

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100;
BU508AW by Inchange Semiconductor

BU508AW

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
2N7002-T by Micro Commercial Components

2N7002-T

Micro Commercial Components

Other Transistors; Maximum Drain Current (ID): .115 A; Terminal Finish: TIN LEAD; JESD-609 Code: e0; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
MPSA42 by Philips Semiconductors

MPSA42

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BC547C by North American Philips Discrete Products Div

BC547C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2905A by North American Philips Discrete Products Div

2N2905A

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
2N2907AUA by New England Semiconductor

2N2907AUA

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N2219A by Semiconductors

2N2219A

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
TIP120 by General Electric Solid State

TIP120

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
BC857C by Shanghai Lunsure Electronic Technology

BC857C

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BD139-10 by Secos

BD139-10

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
PZT2222A by Infineon Technologies

PZT2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
2N2222AUB by New England Semiconductor

2N2222AUB

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;