.6 A Other Function Transistors 102

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	No. of Elements	Sub-Category	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
BFX30	Texas Instruments	PNP	SINGLE	NO		.5 W	.6 A	1	Other Transistors	50	175 Cel
MPS3705	Texas Instruments	NPN	SINGLE	NO	100 MHz	.625 W	.6 A	1	Other Transistors	50	150 Cel
MPS6535	Texas Instruments	PNP	SINGLE	NO	260 MHz	.62 W	.6 A	1	Other Transistors	30	150 Cel
MPS3703	Texas Instruments	PNP	SINGLE	NO	100 MHz	.625 W	.6 A	1	Other Transistors	30	150 Cel
BFV22	Texas Instruments	PNP	SINGLE	NO	150 MHz	.15 W	.6 A	1	Other Transistors	80	175 Cel
BFV21	Texas Instruments	PNP	SINGLE	NO	150 MHz	.15 W	.6 A	1	Other Transistors	100	175 Cel
MPS3704	Texas Instruments	NPN	SINGLE	NO	100 MHz	.625 W	.6 A	1	Other Transistors	100	150 Cel
C5T2222	Texas Instruments	NPN	SINGLE	YES	350 MHz	.32 W	.6 A	1	Other Transistors	100	150 Cel
BF323	Texas Instruments	PNP	SINGLE	NO	250 MHz	.8 W	.6 A	1	Other Transistors	300	175 Cel
BFX29	Texas Instruments	PNP	SINGLE	NO	100 MHz	.6 W	.6 A	1	Other Transistors		175 Cel
30C02SS	Onsemi	NPN	SINGLE	YES		.2 W	.6 A	1	Other Transistors	300	150 Cel
15C01SS	Onsemi	NPN	SINGLE	YES		.2 W	.6 A	1	Other Transistors	300	150 Cel
SCH2202	Onsemi	NPN		YES		.4 W	.6 A		Other Transistors	300	150 Cel
30A02SS	Onsemi	PNP	SINGLE	YES		.2 W	.6 A	1	Other Transistors	200	150 Cel
MPS2222AZL	Onsemi	NPN	SINGLE	NO	300 MHz	.625 W	.6 A	1	Other Transistors	100	150 Cel		Tin/Lead (Sn/Pb)		e0
SO5400	STMicroelectronics	PNP	SINGLE	YES	100 MHz	.2 W	.6 A	1	Other Transistors	40	150 Cel		Matte Tin (Sn)		e3
MSC81406	STMicroelectronics	NPN	SINGLE	NO		15 W	.6 A	1	Other Transistors	20	200 Cel
STZT5400	STMicroelectronics	PNP	SINGLE	YES	100 MHz	1.5 W	.6 A	1	Other Transistors	30	150 Cel		Matte Tin (Sn)		e3
SO5550	STMicroelectronics	NPN	SINGLE	YES	100 MHz	.2 W	.6 A	1	Other Transistors	80	150 Cel		Matte Tin (Sn)		e3
SD1409	STMicroelectronics	NPN	SINGLE	NO		8.7 W	.6 A	1	Other Transistors	20	175 Cel
SO5551	STMicroelectronics	NPN	SINGLE	YES	100 MHz	.2 W	.6 A	1	Other Transistors	80	150 Cel		Matte Tin (Sn)		e3
2N5589	STMicroelectronics	NPN	SINGLE	NO	200 MHz	15 W	.6 A	1	Other Transistors	5	175 Cel
2N2905AT1	STMicroelectronics	PNP	SINGLE	NO		3 W	.6 A	1	Other Transistors	100	200 Cel
PMBT4401/DG,215	NXP Semiconductors	NPN	SINGLE	YES	250 MHz	.25 W	.6 A	1	Other Transistors	100	150 Cel
PMBT2222/G,215	NXP Semiconductors	NPN	SINGLE	YES	250 MHz	.25 W	.6 A	1	Other Transistors	30	150 Cel
PMBT4401,235	NXP Semiconductors	NPN	SINGLE	YES	250 MHz	.25 W	.6 A	1	Other Transistors	100	150 Cel		TIN	1	e3	30	260
SXT2222A	Infineon Technologies	NPN	SINGLE	YES	300 MHz	1 W	.6 A	1	Other Transistors	100	150 Cel
BSX48	Infineon Technologies	NPN	SINGLE	NO	400 MHz		.6 A	1	Other Transistors		175 Cel		Tin/Lead (Sn/Pb)		e0
SXT2907A	Infineon Technologies	NPN	SINGLE	YES	200 MHz	1 W	.6 A	1	Other Transistors	100	150 Cel
BSY58	Infineon Technologies	NPN	SINGLE	NO	400 MHz	.9 W	.6 A	1	Other Transistors	42	175 Cel		Tin/Lead (Sn/Pb)		e0
MMBT2907A-E6327	Infineon Technologies	PNP	SINGLE	YES	200 MHz	.33 W	.6 A	1	Other Transistors	100	150 Cel
SMBT2222	Infineon Technologies	NPN	SINGLE	YES	250 MHz	.33 W	.6 A	1	Other Transistors		150 Cel		Tin/Lead (Sn/Pb)		e0
MMBT2222A-E6433	Infineon Technologies	NPN	SINGLE	YES	300 MHz	.33 W	.6 A	1	Other Transistors	35	150 Cel
MMBT2907A-E6433	Infineon Technologies	PNP	SINGLE	YES	200 MHz	.33 W	.6 A	1	Other Transistors	100	150 Cel
MMBT2222A-E6327	Infineon Technologies	NPN	SINGLE	YES	300 MHz	.33 W	.6 A	1	Other Transistors	35	150 Cel
IMBT4402	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	.31 W	.6 A	1	Other Transistors	50	150 Cel		Tin/Lead (Sn/Pb)		e0
FCX5401	Diodes Incorporated	PNP	SINGLE	YES	200 MHz	1 W	.6 A	1	Other Transistors	60	150 Cel						260
FCX5550	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	1 W	.6 A	1	Other Transistors	60	150 Cel						260
MMDT1DA1	Diodes Incorporated	NPN		YES		.2 W	.6 A	2	Other Transistors	35		SILICON
2SC503	Toshiba	NPN	SINGLE	NO	150 MHz	.8 W	.6 A	1	Other Transistors	70	175 Cel		Tin/Lead (Sn/Pb)		e0
YTS2221A	Toshiba	NPN	SINGLE	YES	200 MHz	.2 W	.6 A	1	Other Transistors	40			Tin/Lead (Sn/Pb)		e0
YTS4400	Toshiba	NPN	SINGLE	YES	200 MHz	.625 W	.6 A	1	Other Transistors	50	150 Cel		Tin/Lead (Sn/Pb)		e0
YTS2221	Toshiba	NPN	SINGLE	YES	200 MHz	.2 W	.6 A	1	Other Transistors	40			Tin/Lead (Sn/Pb)		e0
YTS2906A	Toshiba	PNP	SINGLE	YES	200 MHz	.2 W	.6 A	1	Other Transistors	40			Tin/Lead (Sn/Pb)		e0
YTS2222A	Toshiba	NPN	SINGLE	YES	300 MHz	.625 W	.6 A	1	Other Transistors	100	150 Cel
YTS4402	Toshiba	PNP	SINGLE	YES	150 MHz	.2 W	.6 A	1	Other Transistors	50	150 Cel		Tin/Lead (Sn/Pb)		e0
2SA504	Toshiba	PNP	SINGLE	NO	130 MHz	.8 W	.6 A	1	Other Transistors	30	175 Cel		Tin/Lead (Sn/Pb)		e0
2SC504	Toshiba	NPN	SINGLE	NO	150 MHz	.8 W	.6 A	1	Other Transistors	70	175 Cel		Tin/Lead (Sn/Pb)		e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.