.2 W Other Function Transistors 1,037

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	JESD-609 Code
2SC2754	Toshiba	NPN	SINGLE	NO		.2 W	.1 A		1		Other Transistors			125 Cel	Tin/Lead (Sn/Pb)		e0
2SC397	Toshiba	NPN	SINGLE	NO	800 MHz	.2 W	.05 A		1		Other Transistors			175 Cel	Tin/Lead (Sn/Pb)		e0
2SC786	Toshiba	NPN	SINGLE	NO	600 MHz	.2 W	.02 A		1		Other Transistors		50	150 Cel	Tin/Lead (Sn/Pb)		e0
2SC387	Toshiba	NPN	SINGLE	NO	900 MHz	.2 W	.05 A		1		Other Transistors			125 Cel	Tin/Lead (Sn/Pb)		e0
2SC385	Toshiba	NPN	SINGLE	NO	600 MHz	.2 W	.02 A		1		Other Transistors		80	125 Cel	Tin/Lead (Sn/Pb)		e0
MT6P07T(TE85L)	Toshiba	NPN		YES	10000 MHz	.2 W	.025 A				Other Transistors		70	125 Cel
2SC3608	Toshiba	NPN	SINGLE	YES	7000 MHz	.2 W	.08 A		1		Other Transistors		30	125 Cel	Tin/Lead (Sn/Pb)		e0
2SC2806	Toshiba	NPN	SINGLE	YES	600 MHz	.2 W	.05 A		1		Other Transistors		20	125 Cel	Tin/Lead (Sn/Pb)		e0
2SC3341	Toshiba	NPN	SINGLE	YES	200 MHz	.2 W	.5 A		1		Other Transistors		70	150 Cel	Tin/Lead (Sn/Pb)		e0
YTS2906	Toshiba	PNP	SINGLE	YES	200 MHz	.2 W	.6 A		1		Other Transistors		40		Tin/Lead (Sn/Pb)		e0
2SC3172	Toshiba	NPN	SINGLE	YES	1400 MHz	.2 W	.05 A		1		Other Transistors		40	125 Cel	Tin/Lead (Sn/Pb)		e0
SSM5P16FU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
SSM6P15FU(TE85L,F)	Toshiba	P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
HN1C03FU-A(TE85L,F)	Toshiba	NPN	SINGLE	YES		.2 W	.3 A		1		Other Transistors		200	150 Cel
2SC3548	Toshiba	NPN	SINGLE	YES	4000 MHz	.2 W	.03 A		1		Other Transistors		30	125 Cel	Tin/Lead (Sn/Pb)		e0
SSM5P16FU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
SSM3J15F(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
SSM6L35FU(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.18 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.18 A
2SC3302	Toshiba	NPN	SINGLE	YES	5000 MHz	.2 W	.07 A		1		Other Transistors		25	125 Cel	Tin/Lead (Sn/Pb)		e0
2SK61	Toshiba	N-CHANNEL		NO		.2 W					Other Transistors	JUNCTION		125 Cel	Tin/Lead (Sn/Pb)		e0
SSM3J15F(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SC3137	Toshiba	NPN	SINGLE	YES	2400 MHz	.2 W	.05 A		1		Other Transistors		40	125 Cel	Tin/Lead (Sn/Pb)		e0
SSM6P15FU(TE85L)	Toshiba	P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SJ343(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.05 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.05 A
2SC4944-Y(TE85L,F)	Toshiba	NPN		YES	80 MHz	.2 W	.15 A				Other Transistors		120	125 Cel
2SK18	Toshiba	N-CHANNEL		NO		.2 W					Other Transistors	JUNCTION		150 Cel
2SC4497-R(TE85L)	Toshiba	NPN	SINGLE	YES		.2 W	.1 A		1		Other Transistors		30	150 Cel
2SA1335	Toshiba	PNP	SINGLE	NO	100 MHz	.2 W	.1 A		1		Other Transistors		200		Tin/Lead (Sn/Pb)		e0
2SA1873-Y(TE85L,F)	Toshiba	PNP		YES	80 MHz	.2 W	.15 A				Other Transistors		120	125 Cel
2SA1620-O(TE85L,F)	Toshiba	PNP	SINGLE	YES	70 MHz	.2 W	.3 A		1		Other Transistors		70	150 Cel
2SA1326	Toshiba	PNP	SINGLE	YES	150 MHz	.2 W	.5 A		1		Other Transistors		70	150 Cel	Tin/Lead (Sn/Pb)		e0
2SA1620-O(TE85L)	Toshiba	PNP	SINGLE	YES	70 MHz	.2 W	.3 A		1		Other Transistors		70	150 Cel
2SA1164	Toshiba	PNP	SINGLE	NO	400 MHz	.2 W	.1 A		1		Other Transistors		70	125 Cel	Tin/Lead (Sn/Pb)		e0
2SA1620-Y(TE85L,F)	Toshiba	PNP	SINGLE	YES	70 MHz	.2 W	.3 A		1		Other Transistors		120	150 Cel
2SA1621-O(TE85L)	Toshiba	PNP	SINGLE	YES		.2 W	.8 A		1		Other Transistors		100	150 Cel
2SC4093R28-A	Renesas Electronics	NPN	SINGLE	YES		.2 W	.1 A		1		Other Transistors		125	150 Cel
2SC3360-LN15-A	Renesas Electronics	NPN	SINGLE	YES		.2 W	.1 A		1		Other Transistors		90	150 Cel
2SD780DW1-L	Renesas Electronics	NPN	SINGLE	YES		.2 W	.3 A		1		Other Transistors		110	150 Cel
2SC1622AD15-T2B-AT	Renesas Electronics	NPN	SINGLE	YES	50 MHz	.2 W	.05 A		1		Other Transistors		135	150 Cel
2SD596ADV4-E2B-AT	Renesas Electronics	NPN	SINGLE	YES		.2 W	.7 A		1		Other Transistors		200	150 Cel
2SB624ABV3-T1B	Renesas Electronics	PNP	SINGLE	YES		.2 W	.7 A		1		Other Transistors		170	150 Cel
2SJ185-T1B-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.1 A
2SK4027-AT	Renesas Electronics	N-CHANNEL		NO		.2 W					Other Transistors	JUNCTION		125 Cel
2SC4093RBH-T2	Renesas Electronics	NPN	SINGLE	YES		.2 W	.1 A		1		Other Transistors		125	150 Cel
2SD780A-T2B-AT	Renesas Electronics	NPN	SINGLE	YES		.2 W	.3 A		1		Other Transistors		110
2SD780DW2-L	Renesas Electronics	NPN	SINGLE	YES		.2 W	.3 A		1		Other Transistors		135	150 Cel
2SB624ABV2-AT	Renesas Electronics	PNP	SINGLE	YES		.2 W	.7 A		1		Other Transistors		135	150 Cel
2SA812M5-T2B-AT	Renesas Electronics	PNP	SINGLE	YES		.2 W	.1 A		1		Other Transistors		135	150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.