.2 W Other Function Transistors 1,037

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain Current (ID)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
BFR35AR	Infineon Technologies	NPN	SINGLE	YES		.2 W	.03 A		1		Other Transistors			125 Cel		Tin/Lead (Sn/Pb)		e0
BFR35A	Infineon Technologies	NPN	SINGLE	YES		.2 W	.03 A		1		Other Transistors			125 Cel		Tin/Lead (Sn/Pb)		e0
BFT97	Infineon Technologies	NPN	SINGLE	YES		.2 W	.03 A		1		Other Transistors			150 Cel		Tin/Lead (Sn/Pb)		e0
MMSTA56	Diodes Incorporated	PNP	SINGLE		50 MHz	.2 W	.5 A		1		Other Transistors		100	150 Cel		Tin/Lead (Sn/Pb)		e0
MMST4126	Diodes Incorporated	PNP	SINGLE	YES	250 MHz	.2 W	.2 A		1		Other Transistors		60	150 Cel		Tin/Lead (Sn/Pb)		e0
MMSTA13	Diodes Incorporated	NPN	DARLINGTON	YES	125 MHz	.2 W	.3 A				Other Transistors		10000	150 Cel		Tin/Lead (Sn/Pb)		e0
MMSTA42	Diodes Incorporated	NPN	SINGLE	YES	50 MHz	.2 W	.2 A		1		Other Transistors		40	150 Cel
MMDT4124	Diodes Incorporated	NPN		YES	300 MHz	.2 W	.2 A				Other Transistors		60	150 Cel		Tin/Lead (Sn/Pb)		e0
MMST6427	Diodes Incorporated	NPN	DARLINGTON	YES		.2 W	.5 A				Other Transistors		20000	150 Cel		Tin/Lead (Sn/Pb)		e0
MMSTA55	Diodes Incorporated	PNP	SINGLE		50 MHz	.2 W	.5 A		1		Other Transistors		100	150 Cel		Tin/Lead (Sn/Pb)		e0
DMDT9922	Diodes Incorporated	PNP		YES		.2 W	.1 A				Other Transistors		300	125 Cel
MMSTA64	Diodes Incorporated	PNP	DARLINGTON	YES	125 MHz	.2 W	.5 A				Other Transistors		10000	150 Cel		Tin/Lead (Sn/Pb)		e0
MMSTA05	Diodes Incorporated	NPN	SINGLE	YES	10 MHz	.2 W	.5 A		1		Other Transistors		100	150 Cel		Tin/Lead (Sn/Pb)		e0
MMDT4126	Diodes Incorporated	PNP		YES	250 MHz	.2 W	.2 A				Other Transistors		60	150 Cel		Tin/Lead (Sn/Pb)		e0
MMSTA92	Diodes Incorporated	PNP	SINGLE		50 MHz	.2 W	.1 A		1		Other Transistors		25	150 Cel		Tin/Lead (Sn/Pb)		e0
MMST4124	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.2 W	.2 A		1		Other Transistors		60	150 Cel		Tin/Lead (Sn/Pb)		e0
MMSTA63	Diodes Incorporated	PNP	DARLINGTON	YES	125 MHz	.2 W	.5 A				Other Transistors		5000	150 Cel		Tin/Lead (Sn/Pb)		e0
MMDT3904S	Diodes Incorporated	NPN	SINGLE	YES	300 MHz	.2 W	.2 A		1		Other Transistors		30	150 Cel
MMDT1DA1	Diodes Incorporated	NPN		YES		.2 W	.6 A		2		Other Transistors		35		SILICON
MMSTA14	Diodes Incorporated	NPN	DARLINGTON	YES	125 MHz	.2 W	.3 A				Other Transistors		20000	150 Cel		Tin/Lead (Sn/Pb)		e0
YTS2221A	Toshiba	NPN	SINGLE	YES	200 MHz	.2 W	.6 A		1		Other Transistors		40			Tin/Lead (Sn/Pb)		e0
2SC386A	Toshiba	NPN	SINGLE	NO	600 MHz	.2 W	.02 A		1		Other Transistors		40	125 Cel		Tin/Lead (Sn/Pb)		e0
SSM6P35FU(TE85L)	Toshiba	P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.1 A
2SC2804	Toshiba	NPN	SINGLE	YES	900 MHz	.2 W	.02 A		1		Other Transistors			125 Cel		Tin/Lead (Sn/Pb)		e0
2SC1236	Toshiba	NPN	SINGLE	YES		.2 W	.03 A		1		Other Transistors			175 Cel		Tin/Lead (Sn/Pb)		e0
SSM6P35FU(TE85L,F)	Toshiba	P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.1 A
2SC1551	Toshiba	NPN	SINGLE	YES		.2 W	.03 A		1		Other Transistors			175 Cel		Tin/Lead (Sn/Pb)		e0
SSM6L35FU(TE85L)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.18 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.18 A
2SC384	Toshiba	NPN	SINGLE	NO	500 MHz	.2 W	.05 A		1		Other Transistors		50	125 Cel		Tin/Lead (Sn/Pb)		e0
2SJ305(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.2 A
2SC2805	Toshiba	NPN	SINGLE	YES	1500 MHz	.2 W	.05 A		1		Other Transistors		20	125 Cel		Tin/Lead (Sn/Pb)		e0
2SJ168(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.2 A
2SJ305(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.2 W		ENHANCEMENT MODE	1	.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.2 A		30	260
2SC864	Toshiba	NPN	SINGLE	NO	360 MHz	.2 W	.025 A		1		Other Transistors		39	150 Cel		Tin/Lead (Sn/Pb)		e0
SSM6P16FU(TE85L,F)	Toshiba	P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.1 A
2SC4210-O(TE85L)	Toshiba	NPN	SINGLE	YES		.2 W	.8 A		1		Other Transistors		100	150 Cel
2SC387A	Toshiba	NPN	SINGLE	NO	1200 MHz	.2 W	.05 A		1		Other Transistors		20	125 Cel		Tin/Lead (Sn/Pb)		e0
2SC4944-GR(TE85L,F)	Toshiba	NPN		YES	80 MHz	.2 W	.15 A				Other Transistors		200	125 Cel
SSM6P16FU(TE85L)	Toshiba	P-CHANNEL		YES		.2 W		ENHANCEMENT MODE		.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			.1 A
2SC1380	Toshiba	NPN	SINGLE	NO	80 MHz	.2 W	.1 A		1		Other Transistors		200			Tin/Lead (Sn/Pb)		e0
2SC385A	Toshiba	NPN	SINGLE	NO	800 MHz	.2 W	.02 A		1		Other Transistors		20	125 Cel		Tin/Lead (Sn/Pb)		e0
YTS2221	Toshiba	NPN	SINGLE	YES	200 MHz	.2 W	.6 A		1		Other Transistors		40			Tin/Lead (Sn/Pb)		e0
YTS2906A	Toshiba	PNP	SINGLE	YES	200 MHz	.2 W	.6 A		1		Other Transistors		40			Tin/Lead (Sn/Pb)		e0
2SC2876	Toshiba	NPN	SINGLE	YES	7000 MHz	.2 W	.08 A		1		Other Transistors		30	125 Cel		Tin/Lead (Sn/Pb)		e0
3SK28	Toshiba	N-CHANNEL		NO		.2 W					Other Transistors	JUNCTION		150 Cel		Tin/Lead (Sn/Pb)		e0
2SC4210-O(TE85L,F)	Toshiba	NPN	SINGLE	YES		.2 W	.8 A		1		Other Transistors		100	150 Cel
2SC4210-Y(TE85L,F)	Toshiba	NPN	SINGLE	YES		.2 W	.8 A		1		Other Transistors		160	150 Cel
YTS4402	Toshiba	PNP	SINGLE	YES	150 MHz	.2 W	.6 A		1		Other Transistors		50	150 Cel		Tin/Lead (Sn/Pb)		e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.