.225 W Other Function Transistors 64

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
BF862,235	NXP Semiconductors	N-CHANNEL		YES		.225 W					Other Transistors	JUNCTION		150 Cel	TIN		1	e3	30	260
MPS2907A-G	Weitron Technology	PNP	SINGLE	NO	200 MHz	.225 W	.6 A		1		Other Transistors		50	150 Cel
MMBT4403-G	Weitron Technology	PNP	SINGLE	YES	200 MHz	.225 W	.6 A		1		Other Transistors		20	150 Cel
BCW84B	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
BCW83B	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
2N1924	Texas Instruments	PNP	SINGLE	NO	1 MHz	.225 W	.5 A		1		Other Transistors		34	85 Cel
BSS20	Texas Instruments	NPN	SINGLE	NO	50 MHz	.225 W	.05 A		1		Other Transistors		30	150 Cel
BCW83A	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
2N1926	Texas Instruments	PNP	SINGLE	NO	1.5 MHz	.225 W	.5 A		1		Other Transistors		72	85 Cel
BSS19	Texas Instruments	NPN	SINGLE	NO	50 MHz	.225 W	.05 A		1		Other Transistors		30	150 Cel
BCW82B	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
BCW83C	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
BCW82	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
BCW82A	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
BCW84C	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
2N508	Texas Instruments	PNP	SINGLE	NO	2.5 MHz	.225 W	.5 A		1		Other Transistors		99	100 Cel
BC429	Texas Instruments	NPN	SINGLE	NO	.5 MHz	.225 W	.05 A		1		Other Transistors			150 Cel
2N1925	Texas Instruments	PNP	SINGLE	NO	1.3 MHz	.225 W	.5 A		1		Other Transistors		53	85 Cel
2N524	Texas Instruments	PNP	SINGLE	NO	.8 MHz	.225 W	.5 A		1		Other Transistors		25	100 Cel
BCW84	Texas Instruments	NPN	SINGLE	NO	150 MHz	.225 W	.2 A		1		Other Transistors			150 Cel
BCW62A	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW63A	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW62B	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW63C	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW64C	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW62	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW64A	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW63B	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW63	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW64	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
BCW64B	Texas Instruments	PNP	SINGLE	NO	200 MHz	.225 W	.2 A		1		Other Transistors			140 Cel
MGSF1P02LT3G	Onsemi	P-CHANNEL	SINGLE	YES		.225 W		ENHANCEMENT MODE	1	.75 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	MATTE TIN	.75 A	1	e3		260
2SB330	Onsemi	PNP	SINGLE	NO		.225 W	.15 A		1		Other Transistors		35	100 Cel
BCW67	STMicroelectronics	PNP	SINGLE	YES	100 MHz	.225 W	.8 A		1		Other Transistors		100	150 Cel	Tin/Lead (Sn/Pb)			e0
DMBT9922	Diodes Incorporated	PNP	SINGLE	YES	140 MHz	.225 W	.1 A		1		Other Transistors		300	150 Cel
DMBT9022	Diodes Incorporated	NPN	SINGLE	YES		.225 W	.1 A		1		Other Transistors		270	150 Cel
2SC2327	Toshiba	NPN	SINGLE	YES		.225 W	.03 A		1		Other Transistors			125 Cel	Tin/Lead (Sn/Pb)			e0
2SC2114	Toshiba	NPN	SINGLE	YES		.225 W	.08 A		1		Other Transistors			125 Cel	Tin/Lead (Sn/Pb)			e0
2SC2116	Toshiba	NPN	SINGLE	YES		.225 W	.05 A		1		Other Transistors			125 Cel	Tin/Lead (Sn/Pb)			e0
AT-41411	Broadcom	NPN	SINGLE	YES		.225 W	.05 A		1		Other Transistors		30	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBC1009F3	Samsung	NPN	SINGLE	YES	150 MHz	.225 W	.05 A		1		Other Transistors		60	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBC1009F1	Samsung	NPN	SINGLE	YES	150 MHz	.225 W	.05 A		1		Other Transistors		30	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBA811C7	Samsung	PNP	SINGLE	YES	75 MHz	.225 W	.05 A		1		Other Transistors		300	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBC1623L3	Samsung	NPN	SINGLE	YES	150 MHz	.225 W	.1 A		1		Other Transistors		60	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBA812M4	Samsung	PNP	SINGLE	YES		.225 W	.1 A		1		Other Transistors		90	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBA812M6	Samsung	PNP	SINGLE	YES		.225 W	.1 A		1		Other Transistors		200	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBA811C8	Samsung	PNP	SINGLE	YES	75 MHz	.225 W	.05 A		1		Other Transistors		450	150 Cel	Tin/Lead (Sn/Pb)			e0
MMBC1622D6	Samsung	NPN	SINGLE	YES	100 MHz	.225 W	.1 A		1		Other Transistors		200	150 Cel	Tin/Lead (Sn/Pb)			e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.