.5 W Other Function Transistors 285

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BF505

Infineon Technologies

NPN

SINGLE

NO

750 MHz

.5 W

.02 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BFP650-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.15 A

1

Other Transistors

100

150 Cel

1

260

BF503

Infineon Technologies

NPN

SINGLE

NO

.5 W

.02 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BSL308PE

Infineon Technologies

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

2.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

2.1 A

1

e3

BFP650-E6433

Infineon Technologies

NPN

SINGLE

YES

.5 W

.15 A

1

Other Transistors

100

150 Cel

BFQ82

Infineon Technologies

NPN

SINGLE

YES

.5 W

.03 A

1

Other Transistors

50

175 Cel

BSL316C

Infineon Technologies

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1.5 A

1

e3

BFQ73S

Infineon Technologies

NPN

SINGLE

YES

.5 W

.1 A

1

Other Transistors

175 Cel

BC547VI

Infineon Technologies

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

110

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW66KH-E6433

Infineon Technologies

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

250

150 Cel

BC557VI

Infineon Technologies

PNP

SINGLE

NO

150 MHz

.5 W

.1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW66KH-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

250

150 Cel

1

260

BCW66KF-E6433

Infineon Technologies

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

100

150 Cel

BCW66KG-E6327

Infineon Technologies

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

160

150 Cel

1

260

BC556VI

Infineon Technologies

PNP

SINGLE

NO

150 MHz

.5 W

.1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BC546VI

Infineon Technologies

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

110

150 Cel

Tin/Lead (Sn/Pb)

e0

BC558VI

Infineon Technologies

PNP

SINGLE

NO

150 MHz

.5 W

.1 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BC548VI

Infineon Technologies

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

110

150 Cel

Tin/Lead (Sn/Pb)

e0

ZUMT491TC

Diodes Incorporated

NPN

SINGLE

YES

.5 W

1 A

1

Other Transistors

150 Cel

MATTE TIN

e3

30

260

SSM6P40TU(TE85L)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

1.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 A

SSM6P39TU(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

SSM5G11TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.4 A

2SC2884-Y(TE12L)

Toshiba

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

160

150 Cel

SSM6E01TU(TE85L,F)

Toshiba

YES

.5 W

1

Other Transistors

SILICON

SSM6J207FE(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 A

SSM6J402TU(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

SSM3J135TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

SSM6P25TU(TE85L,F)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

2SC4409(TE12L)

Toshiba

NPN

SINGLE

YES

.5 W

2 A

1

Other Transistors

120

150 Cel

SSM6J21TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

SSM6P54TU(TE85L)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

1.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

2SC6136(TPE2)

Toshiba

NPN

SINGLE

NO

.5 W

.7 A

1

Other Transistors

80

150 Cel

SSM6P28TU(TE85L,F)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.8 A

TBC549

Toshiba

NPN

SINGLE

NO

300 MHz

.5 W

.1 A

1

Other Transistors

200

150 Cel

Tin/Lead (Sn/Pb)

e0

SSM6L11TU(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

SSM6E03TU(TE85L)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

SSM6J206FE(TPL3)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

SSM6P36TU(TE85L)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.33 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.33 A

2SC2873-O(TE12L)

Toshiba

NPN

SINGLE

YES

.5 W

2 A

1

Other Transistors

70

150 Cel

SSM6L12TU(TE85L)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.5 A

SSM6J207FE(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 A

2SC2873-Y(TE12L,F)

Toshiba

NPN

SINGLE

YES

.5 W

2 A

1

Other Transistors

120

150 Cel

SSM6E03TU(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

1.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.8 A

2SC2884-O(TE12L,F)

Toshiba

NPN

SINGLE

YES

.5 W

.8 A

1

Other Transistors

100

150 Cel

SSM6P36TU(TE85L,F)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.33 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.33 A

2SC4409(TE12L,F)

Toshiba

NPN

SINGLE

YES

.5 W

2 A

1

Other Transistors

120

150 Cel

SSM6L13TU(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.8 A

2SC6136(TPE2,F)

Toshiba

NPN

SINGLE

NO

.5 W

.7 A

1

Other Transistors

80

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.