.7 W Other Function Transistors 59

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

SSM6J214FE(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.6 A

SSM6J215FE(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.4 A

MT3S111(TE85L,F)

Toshiba

NPN

SINGLE

YES

9000 MHz

.7 W

.1 A

1

Other Transistors

200

150 Cel

2N5964

Fairchild Semiconductor

NPN

SINGLE

NO

100 MHz

.7 W

.6 A

1

Other Transistors

50

135 Cel

Tin/Lead (Sn/Pb)

e0

SSM6J213FE(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

2.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.6 A

BFW44

Texas Instruments

PNP

SINGLE

NO

60 MHz

.7 W

.5 A

1

Other Transistors

40

175 Cel

BFY64

Texas Instruments

PNP

SINGLE

NO

250 MHz

.7 W

.5 A

1

Other Transistors

175 Cel

BFX68

Texas Instruments

NPN

SINGLE

NO

100 MHz

.7 W

1

Other Transistors

175 Cel

BFY67A

Texas Instruments

NPN

SINGLE

NO

60 MHz

.7 W

1 A

1

Other Transistors

40

175 Cel

BSX72

Texas Instruments

NPN

SINGLE

NO

100 MHz

.7 W

1 A

1

Other Transistors

40

175 Cel

BFY67C

Texas Instruments

NPN

SINGLE

NO

60 MHz

.7 W

1 A

1

Other Transistors

30

175 Cel

BC144

Texas Instruments

NPN

SINGLE

NO

40 MHz

.7 W

1

Other Transistors

40

175 Cel

BFY33

Texas Instruments

NPN

SINGLE

NO

80 MHz

.7 W

.5 A

1

Other Transistors

175 Cel

BSW23

Texas Instruments

PNP

SINGLE

NO

200 MHz

.7 W

1

Other Transistors

175 Cel

CPH6021TL

Onsemi

NPN

YES

8000 MHz

.7 W

.1 A

Other Transistors

60

150 Cel

MCH3219

Onsemi

NPN

SINGLE

YES

.7 W

1 A

1

Other Transistors

250

150 Cel

MCH3217

Onsemi

NPN

SINGLE

YES

.7 W

1.5 A

1

Other Transistors

250

150 Cel

CPH6020

Onsemi

NPN

SINGLE

YES

13000 MHz

.7 W

.15 A

1

Other Transistors

60

150 Cel

15C02CH

Onsemi

NPN

SINGLE

YES

.7 W

1 A

1

Other Transistors

300

150 Cel

50A02CH

Onsemi

PNP

SINGLE

YES

.7 W

.5 A

1

Other Transistors

200

150 Cel

SCH1305

Onsemi

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

1.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.5 A

MCH3218

Onsemi

NPN

SINGLE

YES

.7 W

1.5 A

1

Other Transistors

250

150 Cel

50C02CH

Onsemi

NPN

SINGLE

YES

.7 W

.5 A

1

Other Transistors

300

150 Cel

30C02CH

Onsemi

NPN

SINGLE

YES

.7 W

.7 A

1

Other Transistors

300

150 Cel

MCH6732

Onsemi

NPN

SINGLE

YES

.7 W

1 A

1

Other Transistors

300

125 Cel

MCH5702

Onsemi

NPN

SINGLE

YES

.7 W

1.5 A

1

Other Transistors

200

125 Cel

2SJ658

Onsemi

P-CHANNEL

SINGLE

NO

.7 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

2SC3332

Onsemi

NPN

SINGLE

NO

120 MHz

.7 W

.7 A

1

Other Transistors

100

150 Cel

2SA1319

Onsemi

PNP

SINGLE

NO

120 MHz

.7 W

.7 A

1

Other Transistors

100

150 Cel

30A02CH

Onsemi

PNP

SINGLE

YES

.7 W

.7 A

1

Other Transistors

200

150 Cel

PBRN123ES,126

NXP Semiconductors

NPN

SINGLE

NO

.7 W

1

Other Transistors

70

150 Cel

BFR106-E6433

Infineon Technologies

NPN

SINGLE

YES

3500 MHz

.7 W

.1 A

1

Other Transistors

40

150 Cel

BFP196-E6433

Infineon Technologies

NPN

SINGLE

YES

5000 MHz

.7 W

.1 A

1

Other Transistors

50

150 Cel

BFT12

Infineon Technologies

NPN

SINGLE

YES

.7 W

.15 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

BFQ60

Infineon Technologies

NPN

SINGLE

NO

.7 W

.035 A

1

Other Transistors

175 Cel

2N6701

Infineon Technologies

NPN

SINGLE

YES

.7 W

.05 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

BFQ59

Infineon Technologies

NPN

SINGLE

NO

.7 W

.035 A

1

Other Transistors

175 Cel

BFP196R-E6327

Infineon Technologies

NPN

SINGLE

YES

5000 MHz

.7 W

.15 A

1

Other Transistors

70

150 Cel

BFP196R-E6433

Infineon Technologies

NPN

SINGLE

YES

5000 MHz

.7 W

.15 A

1

Other Transistors

70

150 Cel

BFR14C

Infineon Technologies

NPN

SINGLE

YES

.7 W

.035 A

1

Other Transistors

175 Cel

Tin/Lead (Sn/Pb)

e0

SSM3J314T(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

SSM6J215FE(TPL3,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.4 A

SSM3J306T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

2.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

SSM3J305T(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

1.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.7 A

SSM6J215FE(TPL3)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.4 A

SSM3J313T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

1.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

SSM3J313T(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

1.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

SSM6J214FE(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.6 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.