.8 W Other Function Transistors 292

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	JESD-609 Code
SCH1302	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
CPH5820	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel		1 A
MCH3317	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.5 A
2SC5415AE	Onsemi	NPN	SINGLE	YES	5000 MHz	.8 W	.1 A		1		Other Transistors		90	150 Cel
2SC4866	Onsemi	NPN	SINGLE	YES		.8 W	.07 A		1		Other Transistors
MCH3245	Onsemi	NPN	SINGLE	YES		.8 W	2 A		1		Other Transistors		200	150 Cel
MCH3244	Onsemi	NPN	SINGLE	YES		.8 W	2 A		1		Other Transistors		200	150 Cel
MMFT2955E	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.2 A
MCH6634	Onsemi	N-CHANNEL AND P-CHANNEL		YES		.8 W		ENHANCEMENT MODE		.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.4 A
SCH1311	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.5 A
MCH6657	Onsemi	P-CHANNEL		YES		.8 W		DEPLETION MODE		.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.7 A
CPH5812	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel		1.5 A
2SD1801R	Onsemi	NPN	SINGLE	YES		.8 W	2 A		1		Other Transistors		100	150 Cel
MCH3314	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.6 A
2SC4660	Onsemi	NPN	SINGLE	NO	2200 MHz	.8 W	.3 A		1		Other Transistors		40
MCH6618	Onsemi	N-CHANNEL AND P-CHANNEL		YES		.8 W		ENHANCEMENT MODE		.14 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.14 A
MCH3105	Onsemi	PNP	SINGLE	YES		.8 W	3 A		1		Other Transistors		200	150 Cel
2SC4859	Onsemi	NPN	SINGLE	YES		.8 W	.08 A		1		Other Transistors
MCH3307	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1 A
MCH3339	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.5 A
TT3031NP	Onsemi	PNP	SINGLE	NO		.8 W	3 A		1		Other Transistors		200	150 Cel
2SC5415AF	Onsemi	NPN	SINGLE	YES	5000 MHz	.8 W	.1 A		1		Other Transistors		135	150 Cel
SCH1333	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
MCH3376	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.5 A
MCH6644	Onsemi	N-CHANNEL AND P-CHANNEL		YES		.8 W		ENHANCEMENT MODE		1.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.8 A
MCH6632	Onsemi	N-CHANNEL AND P-CHANNEL		YES		.8 W		ENHANCEMENT MODE		1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.5 A
SCH1306	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1 A
MCH5818	Onsemi	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel		1.5 A
BFR36	STMicroelectronics	NPN	SINGLE	NO	1000 MHz	.8 W	.15 A		1		Other Transistors		40	175 Cel	TIN LEAD		e0
BFG196-E6433	Infineon Technologies	NPN	SINGLE	YES	5000 MHz	.8 W	.1 A		1		Other Transistors		50	150 Cel	TIN LEAD		e0
BFT98T	Infineon Technologies	NPN	SINGLE	YES		.8 W	.15 A		1		Other Transistors			175 Cel
2SC2230A-Y(TPE6)	Toshiba	NPN	SINGLE	NO	50 MHz	.8 W	.1 A		1		Other Transistors		120	150 Cel
2SC503	Toshiba	NPN	SINGLE	NO	150 MHz	.8 W	.6 A		1		Other Transistors		70	175 Cel	Tin/Lead (Sn/Pb)		e0
MT3S113(TE85L)	Toshiba	NPN	SINGLE	YES	10500 MHz	.8 W	.1 A		1		Other Transistors		200	150 Cel
2SC510	Toshiba	NPN	SINGLE	NO	60 MHz	.8 W	1.5 A		1		Other Transistors		30	175 Cel	Tin/Lead (Sn/Pb)		e0
2SA949-O(TPE6)	Toshiba	PNP	SINGLE	NO		.8 W	.05 A		1		Other Transistors		70	150 Cel
2SA2214(TE85L,F)	Toshiba	PNP	SINGLE	YES		.8 W	1.5 A		1		Other Transistors		200	150 Cel
2SC1627A-Y(TPE6)	Toshiba	NPN	SINGLE	NO		.8 W	.4 A		1		Other Transistors		120	150 Cel
2SA817A-O(TPE6,F)	Toshiba	PNP	SINGLE	NO		.8 W	.4 A		1		Other Transistors		70	150 Cel
MT3S111TU(TE85L)	Toshiba	NPN	SINGLE	YES	8000 MHz	.8 W	.1 A		1		Other Transistors		200	150 Cel
2SC6135(TE85L)	Toshiba	NPN	SINGLE	YES		.8 W	1 A		1		Other Transistors		400	150 Cel
MT3S19(TE85L)	Toshiba	NPN	SINGLE	YES	10000 MHz	.8 W	.08 A		1		Other Transistors		100	150 Cel
SSM3J120TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4 A
2SA512	Toshiba	PNP	SINGLE	NO	50 MHz	.8 W	1 A		1		Other Transistors			150 Cel	Tin/Lead (Sn/Pb)		e0
2SC2230-GR(TPE6)	Toshiba	NPN	SINGLE	NO	50 MHz	.8 W	.1 A		1		Other Transistors		200	150 Cel
SSM3J109TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
SSM5G09TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		85 Cel		1.5 A
2SC2229-O(TPE6)	Toshiba	NPN	SINGLE	NO		.8 W	.05 A		1		Other Transistors		70	150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.