.8 W Other Function Transistors 292

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SC3007	Toshiba	NPN	SINGLE	NO	100 MHz	.8 W	2 A		1		Other Transistors			150 Cel	Tin/Lead (Sn/Pb)		e0
SSM3J117TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
MT3S113(TE85L,F)	Toshiba	NPN	SINGLE	YES	10500 MHz	.8 W	.1 A		1		Other Transistors		200	150 Cel
SSM5G04TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		85 Cel		1 A
2SA2214(TE85L)	Toshiba	PNP	SINGLE	YES		.8 W	1.5 A		1		Other Transistors		200	150 Cel
SSM3J56MFV(TPL3)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.8 A
2SA949-Y(TPE6)	Toshiba	PNP	SINGLE	NO		.8 W	.05 A		1		Other Transistors		120	150 Cel
SSM3J114TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.8 A
2SA2215(TE85L)	Toshiba	PNP	SINGLE	YES		.8 W	2.5 A		1		Other Transistors		200	150 Cel
2SC2230A-GR(TPE6)	Toshiba	NPN	SINGLE	NO	50 MHz	.8 W	.1 A		1		Other Transistors		200	150 Cel
2SA2195(TE85L)	Toshiba	PNP	SINGLE	YES		.8 W	1.7 A		1		Other Transistors		200	150 Cel
2SC2229-O(TPE6,F)	Toshiba	NPN	SINGLE	NO		.8 W	.05 A		1		Other Transistors		70	150 Cel
SSM5G10TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel		1.5 A
SSM3J108TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.8 A
SSM3J112TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.1 A
2SC1627A-O(TPE6,F)	Toshiba	NPN	SINGLE	NO		.8 W	.4 A		1		Other Transistors		70	150 Cel
SSM3J36TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	.33 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		.33 A
2SA510	Toshiba	PNP	SINGLE	NO	50 MHz	.8 W	1 A		1		Other Transistors			150 Cel	Tin/Lead (Sn/Pb)		e0
2SA817A-O(TPE6)	Toshiba	PNP	SINGLE	NO		.8 W	.4 A		1		Other Transistors		70	150 Cel
SSM3J118TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.4 A
SSM5G04TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		85 Cel		1 A
2SA504	Toshiba	PNP	SINGLE	NO	130 MHz	.8 W	.6 A		1		Other Transistors		30	175 Cel	Tin/Lead (Sn/Pb)		e0
2SC504	Toshiba	NPN	SINGLE	NO	150 MHz	.8 W	.6 A		1		Other Transistors		70	175 Cel	Tin/Lead (Sn/Pb)		e0
SSM3J115TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	2.2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2.2 A
SSM5G09TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		85 Cel		1.5 A
2SC1627A-O(TPE6)	Toshiba	NPN	SINGLE	NO		.8 W	.4 A		1		Other Transistors		70	150 Cel
2SC2230-Y(TPE6)	Toshiba	NPN	SINGLE	NO	50 MHz	.8 W	.1 A		1		Other Transistors		120	150 Cel
2SC2229-Y(TPE6)	Toshiba	NPN	SINGLE	NO		.8 W	.05 A		1		Other Transistors		120	150 Cel
SSM3J113TU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1.7 A
2SC6133(TE85L)	Toshiba	NPN	SINGLE	YES		.8 W	1.5 A		1		Other Transistors		400	150 Cel
2SA2195(TE85L,F)	Toshiba	PNP	SINGLE	YES		.8 W	1.7 A		1		Other Transistors		200	150 Cel
2SC109A	Toshiba	NPN	SINGLE	NO	150 MHz	.8 W	.8 A		1		Other Transistors		40	175 Cel	Tin/Lead (Sn/Pb)		e0
2SC108A	Toshiba	NPN	SINGLE	NO	150 MHz	.8 W	.8 A		1		Other Transistors		40	175 Cel	Tin/Lead (Sn/Pb)		e0
2SC3301	Toshiba	NPN	SINGLE	YES	7000 MHz	.8 W	.08 A		1		Other Transistors		30	125 Cel	Tin/Lead (Sn/Pb)		e0
2SC2229-Y(TPE6,F)	Toshiba	NPN	SINGLE	NO		.8 W	.05 A		1		Other Transistors		120	150 Cel
2SA817A-Y(TPE6)	Toshiba	PNP	SINGLE	NO		.8 W	.4 A		1		Other Transistors		120	150 Cel
2SA817A-Y(TPE6,F)	Toshiba	PNP	SINGLE	NO		.8 W	.4 A		1		Other Transistors		120	150 Cel
2SC512	Toshiba	NPN	SINGLE	NO	60 MHz	.8 W	1.5 A		1		Other Transistors		30	175 Cel	Tin/Lead (Sn/Pb)		e0
2SA503	Toshiba	PNP	SINGLE	NO	130 MHz	.8 W	.6 A		1		Other Transistors		30	175 Cel	Tin/Lead (Sn/Pb)		e0
SSM5G10TU(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.8 W		ENHANCEMENT MODE	1	1.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		125 Cel		1.5 A
2SC6100(TE85L)	Toshiba	NPN	SINGLE	YES		.8 W	2.5 A		1		Other Transistors		400	150 Cel
2SB564M	Renesas Electronics	PNP	SINGLE	NO		.8 W	1 A		1		Other Transistors		90	150 Cel
2SC2721-AZ	Renesas Electronics	NPN	SINGLE	NO	110 MHz	.8 W	.7 A		1		Other Transistors		400	150 Cel				10	260
2SB605	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A		1		Other Transistors		90	150 Cel	Tin/Lead (Sn/Pb)		e0
2SB564K	Renesas Electronics	PNP	SINGLE	NO		.8 W	1 A		1		Other Transistors		200	150 Cel
2SB564L	Renesas Electronics	PNP	SINGLE	NO		.8 W	1 A		1		Other Transistors		135	150 Cel
2SB605M	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A		1		Other Transistors		90	150 Cel
2SB605-AZ	Renesas Electronics	PNP	SINGLE	NO	120 MHz	.8 W	.7 A		1		Other Transistors		90	150 Cel				10	260

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.