1.3 W Other Function Transistors 136

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SA1828F

Onsemi

PNP

SINGLE

NO

150 MHz

1.3 W

.1 A

1

Other Transistors

160

2SA1740D

Onsemi

PNP

SINGLE

YES

70 MHz

1.3 W

.4 A

1

Other Transistors

60

150 Cel

2SA1852F

Onsemi

PNP

SINGLE

NO

300 MHz

1.3 W

.1 A

1

Other Transistors

160

2SA1828E

Onsemi

PNP

SINGLE

NO

150 MHz

1.3 W

.1 A

1

Other Transistors

100

2SA1853F

Onsemi

PNP

SINGLE

NO

300 MHz

1.3 W

.2 A

1

Other Transistors

160

150 Cel

2SA1851D

Onsemi

PNP

SINGLE

NO

400 MHz

1.3 W

.3 A

1

Other Transistors

60

2SA1851F

Onsemi

PNP

SINGLE

NO

400 MHz

1.3 W

.3 A

1

Other Transistors

160

2SA1850

Onsemi

PNP

SINGLE

NO

400 MHz

1.3 W

.2 A

1

Other Transistors

60

2SA1851E

Onsemi

PNP

SINGLE

NO

400 MHz

1.3 W

.3 A

1

Other Transistors

100

2SA1853

Onsemi

PNP

SINGLE

NO

300 MHz

1.3 W

.2 A

1

Other Transistors

60

2SA1850E

Onsemi

PNP

SINGLE

NO

1.3 W

.2 A

1

Other Transistors

100

150 Cel

2SA1415S-TD-E

Onsemi

PNP

SINGLE

YES

1.3 W

.14 A

1

Other Transistors

140

Tin/Bismuth (Sn/Bi)

1

e6

2SA1849D

Onsemi

PNP

SINGLE

NO

700 MHz

1.3 W

.5 A

1

Other Transistors

60

2SA1851

Onsemi

PNP

SINGLE

NO

400 MHz

1.3 W

.3 A

1

Other Transistors

60

2SA1828D

Onsemi

PNP

SINGLE

NO

150 MHz

1.3 W

.1 A

1

Other Transistors

60

2SA1882T

Onsemi

PNP

SINGLE

YES

1.3 W

1.5 A

1

Other Transistors

200

150 Cel

2SA1853E

Onsemi

PNP

SINGLE

NO

300 MHz

1.3 W

.2 A

1

Other Transistors

100

150 Cel

2SA1749D

Onsemi

PNP

SINGLE

NO

1.3 W

.3 A

1

Other Transistors

60

150 Cel

2SA1936

Onsemi

PNP

SINGLE

YES

300 MHz

1.3 W

5 A

1

Other Transistors

100

150 Cel

2SA1849F

Onsemi

PNP

SINGLE

NO

700 MHz

1.3 W

.5 A

1

Other Transistors

160

2SA1882S

Onsemi

PNP

SINGLE

YES

1.3 W

1.5 A

1

Other Transistors

140

150 Cel

2SA1749C

Onsemi

PNP

SINGLE

NO

1.3 W

.3 A

1

Other Transistors

40

150 Cel

2SA1896S

Onsemi

PNP

SINGLE

YES

1.3 W

2.5 A

1

Other Transistors

140

150 Cel

2SA1749E

Onsemi

PNP

SINGLE

NO

1.3 W

.3 A

1

Other Transistors

100

150 Cel

2SA1896

Onsemi

PNP

SINGLE

YES

1.3 W

2.5 A

1

Other Transistors

140

2SA1882

Onsemi

PNP

SINGLE

YES

1.3 W

1.5 A

1

Other Transistors

140

2SA1740D-TD-E

Onsemi

PNP

SINGLE

YES

1.3 W

.2 A

1

Other Transistors

60

150 Cel

Tin/Bismuth (Sn/Bi)

1

e6

2SA1750

Onsemi

PNP

SINGLE

NO

1.3 W

.5 A

1

Other Transistors

40

2SA1896T

Onsemi

PNP

SINGLE

YES

1.3 W

2.5 A

1

Other Transistors

200

150 Cel

SD1080-7

STMicroelectronics

NPN

SINGLE

NO

1.3 W

.15 A

1

Other Transistors

175 Cel

2SJ676(TP)

Toshiba

P-CHANNEL

SINGLE

NO

1.3 W

ENHANCEMENT MODE

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.5 A

UPA652TT-E1-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

HAT1033T

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.5 A

UPA652TT-E2-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

UPA652TT-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2 A

e6

10

260

UPA652TT-E2-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

2SD1693-AZ

Renesas Electronics

NPN

DARLINGTON

NO

1.3 W

3 A

Other Transistors

2000

150 Cel

10

260

UPA653TT-A

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2.5 A

e6

10

260

2SD1692-AZ

Renesas Electronics

NPN

DARLINGTON

NO

1.3 W

3 A

Other Transistors

2000

150 Cel

10

260

UPA652TT-AT

Renesas Electronics

P-CHANNEL

SINGLE

YES

1.3 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.