Toshiba - 2SJ676(TP)

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2SJ676(TP) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SJ676(TP)
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (ID): 2.5 A; Maximum Drain Current (Abs) (ID): 2.5 A;
Datasheet 2SJ676(TP) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.3 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 2.5 A
Maximum Drain Current (Abs) (ID): 2.5 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
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