1.5 W Other Function Transistors 201

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SA1827	Onsemi	PNP	SINGLE	NO		1.5 W	4 A		1		Other Transistors		100
2SA1798	Onsemi	PNP	SINGLE	NO		1.5 W	8 A		1		Other Transistors		100
2SA1854S	Onsemi	PNP	SINGLE	NO		1.5 W	5 A		1		Other Transistors		140	150 Cel
2SA1855S	Onsemi	PNP	SINGLE	NO		1.5 W	4 A		1		Other Transistors		140	150 Cel
BC337-016G	Onsemi	NPN	SINGLE	NO		1.5 W	.8 A		1		Other Transistors		100	150 Cel	TIN SILVER COPPER			e1		260
2SA1855R	Onsemi	PNP	SINGLE	NO		1.5 W	4 A		1		Other Transistors		100	150 Cel
BC337-040	Onsemi	NPN	SINGLE	NO		1.5 W	.8 A		1		Other Transistors		250	150 Cel	TIN LEAD			e0		235
2SA1830E	Onsemi	PNP	SINGLE	NO		1.5 W	2 A		1		Other Transistors		100	150 Cel
2SA1824	Onsemi	PNP	SINGLE	NO		1.5 W	5 A		1		Other Transistors		100
2SA1827S-AY	Onsemi	PNP	SINGLE	NO		1.5 W	4 A		1		Other Transistors		140	150 Cel	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
2SA1827T	Onsemi	PNP	SINGLE	NO		1.5 W	4 A		1		Other Transistors		200	150 Cel
2SA1824T	Onsemi	PNP	SINGLE	NO		1.5 W	5 A		1		Other Transistors		200	150 Cel
2SA1824S	Onsemi	PNP	SINGLE	NO		1.5 W	5 A		1		Other Transistors		140	150 Cel
STX83003-AP	STMicroelectronics	NPN	SINGLE	NO		1.5 W	1 A		1		Other Transistors		16	150 Cel
STZT5400	STMicroelectronics	PNP	SINGLE	YES	100 MHz	1.5 W	.6 A		1		Other Transistors		30	150 Cel	Matte Tin (Sn)			e3
STX93003-AP	STMicroelectronics	PNP	SINGLE	NO		1.5 W	1 A		1		Other Transistors		16	150 Cel	Matte Tin (Sn)			e3
PBHV8115X,115	NXP Semiconductors	NPN	SINGLE	YES		1.5 W	1 A		1		Other Transistors		10	150 Cel
PBHV9115X,115	NXP Semiconductors	PNP	SINGLE	YES		1.5 W	1 A		1		Other Transistors		10	150 Cel	TIN		1	e3	30	260
PBHV9040X,115	NXP Semiconductors	PNP	SINGLE	YES		1.5 W	.25 A		1		Other Transistors		10	150 Cel
BCX53,120	NXP Semiconductors	PNP	SINGLE	YES		1.5 W	1 A		1		Other Transistors		63	150 Cel	TIN		1	e3	30	260
BSP62-E6433	Infineon Technologies	PNP	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel	Tin/Lead (Sn/Pb)			e0
BSP61-E6433	Infineon Technologies	PNP	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel	Tin/Lead (Sn/Pb)			e0
BSP50-E6433	Infineon Technologies	NPN	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel	TIN LEAD			e0
BSP60-E6433	Infineon Technologies	PNP	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel	TIN LEAD		1	e0		235
BSP52-E6433	Infineon Technologies	NPN	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel	Tin/Lead (Sn/Pb)			e0
BSP51-E6433	Infineon Technologies	NPN	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel	Tin/Lead (Sn/Pb)			e0
BFN38-E6327	Infineon Technologies	NPN	SINGLE	YES		1.5 W	.2 A		1		Other Transistors		25	150 Cel			1			260
BSP61-E6327	Infineon Technologies	PNP	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel			1			260
BSP51-E6327	Infineon Technologies	NPN	DARLINGTON	YES		1.5 W	1 A				Other Transistors		1000	150 Cel			1			260
BFN38-E6433	Infineon Technologies	NPN	SINGLE	YES		1.5 W	.2 A		1		Other Transistors		25	150 Cel
IRF7701GPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES		1.5 W		ENHANCEMENT MODE	1	10 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		10 A
2SC1626	Toshiba	NPN	SINGLE	NO	100 MHz	1.5 W	.75 A		1		Other Transistors		70	150 Cel	Tin/Lead (Sn/Pb)			e0
2SD2584	Toshiba	NPN	DARLINGTON	NO		1.5 W	7 A				Other Transistors		2000	150 Cel	Tin/Lead (Sn/Pb)			e0
S1954	Toshiba	NPN	SINGLE	NO	100 MHz	1.5 W	1.5 A		1		Other Transistors		70	150 Cel	Tin/Lead (Sn/Pb)			e0
2SB1667O(SM)	Toshiba	PNP	SINGLE	YES		1.5 W	3 A		1		Other Transistors		60	150 Cel
2SD235	Toshiba	NPN	SINGLE	NO	1 MHz	1.5 W	3 A		1		Other Transistors		40	140 Cel	Tin/Lead (Sn/Pb)			e0
2SJ511(TE12L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.5 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
2SB1667Y(SM)	Toshiba	PNP	SINGLE	YES		1.5 W	3 A		1		Other Transistors		100	150 Cel
2SC2194A	Toshiba	NPN	SINGLE	NO	100 MHz	1.5 W	1.5 A		1		Other Transistors		70	150 Cel	Tin/Lead (Sn/Pb)			e0
TPC8407(TE12L,Q)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		1.5 W		ENHANCEMENT MODE		9 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		9 A
TPCS8101(TE12L)	Toshiba	P-CHANNEL	SINGLE	YES		1.5 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		6 A
2SB435	Toshiba	PNP	SINGLE	NO	3 MHz	1.5 W	3 A		1		Other Transistors		40	140 Cel	Tin/Lead (Sn/Pb)			e0
2SJ508(TE12L)	Toshiba	P-CHANNEL	SINGLE	YES		1.5 W		ENHANCEMENT MODE	1	1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		1 A
2SC5355	Toshiba	NPN	SINGLE	NO		1.5 W	5 A		1		Other Transistors		20	150 Cel
2SA816	Toshiba	PNP	SINGLE	NO	100 MHz	1.5 W	.75 A		1		Other Transistors		70	140 Cel	Tin/Lead (Sn/Pb)			e0
2SB435G	Toshiba	PNP	SINGLE	NO	3 MHz	1.5 W	3 A		1		Other Transistors			150 Cel	Tin/Lead (Sn/Pb)			e0
2SJ511(TE12L)	Toshiba	P-CHANNEL	SINGLE	YES		1.5 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
2SB434G	Toshiba	PNP	SINGLE	NO	3 MHz	1.5 W	3 A		1		Other Transistors			150 Cel	Tin/Lead (Sn/Pb)			e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.