125 W Other Function Transistors 36

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

IRF5N5210SCX

Infineon Technologies

P-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

31 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

31 A

TIP35D

Texas Instruments

NPN

SINGLE

NO

3 MHz

125 W

25 A

1

Other Transistors

8

140 Cel

TIP36F

Texas Instruments

PNP

SINGLE

NO

3 MHz

125 W

25 A

1

Other Transistors

25

140 Cel

TIP35F

Texas Instruments

NPN

SINGLE

NO

3 MHz

125 W

25 A

1

Other Transistors

8

140 Cel

BUX47B

Texas Instruments

NPN

SINGLE

NO

8 MHz

125 W

9 A

1

Other Transistors

5

175 Cel

TIP36E

Texas Instruments

PNP

SINGLE

NO

3 MHz

125 W

25 A

1

Other Transistors

25

140 Cel

2N6306

Texas Instruments

NPN

SINGLE

NO

5 MHz

125 W

8 A

1

Other Transistors

15

200 Cel

2N6307

Texas Instruments

NPN

SINGLE

NO

5 MHz

125 W

8 A

1

Other Transistors

15

200 Cel

BUX47

Texas Instruments

NPN

SINGLE

NO

7 MHz

125 W

9 A

1

Other Transistors

7

200 Cel

MJ3430

Texas Instruments

NPN

SINGLE

NO

2.5 MHz

125 W

5 A

1

Other Transistors

15

140 Cel

2N6561

Texas Instruments

NPN

SINGLE

NO

15 MHz

125 W

10 A

1

Other Transistors

10

200 Cel

TIPL765A

Texas Instruments

NPN

SINGLE

NO

8 MHz

125 W

10 A

1

Other Transistors

15

140 Cel

2N6545

Texas Instruments

NPN

SINGLE

NO

6 MHz

125 W

8 A

1

Other Transistors

7

200 Cel

BUX47A

Texas Instruments

NPN

SINGLE

NO

125 W

9 A

1

Other Transistors

7

200 Cel

2N6544

Texas Instruments

NPN

SINGLE

NO

6 MHz

125 W

8 A

1

Other Transistors

7

200 Cel

TIP35E

Texas Instruments

NPN

SINGLE

NO

3 MHz

125 W

25 A

1

Other Transistors

8

140 Cel

TIP36D

Texas Instruments

PNP

SINGLE

NO

3 MHz

125 W

25 A

1

Other Transistors

25

140 Cel

TIPL765

Texas Instruments

NPN

SINGLE

NO

8 MHz

125 W

10 A

1

Other Transistors

15

140 Cel

2N6246

Texas Instruments

PNP

SINGLE

NO

10 MHz

125 W

10 A

1

Other Transistors

20

200 Cel

2N6247

Texas Instruments

PNP

SINGLE

NO

10 MHz

125 W

10 A

1

Other Transistors

20

200 Cel

2N6248

Texas Instruments

PNP

SINGLE

NO

10 MHz

125 W

10 A

1

Other Transistors

20

200 Cel

BU931ZSM

STMicroelectronics

NPN

DARLINGTON

NO

125 W

10 A

Other Transistors

300

175 Cel

BU931ZT

STMicroelectronics

NPN

DARLINGTON

NO

125 W

10 A

Other Transistors

300

175 Cel

Matte Tin (Sn)

e3

IRFM9240U

Infineon Technologies

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

IRFM9240D

Infineon Technologies

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

2SJ620(TE24L,Q)

Toshiba

P-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

18 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

2SJ56

Renesas Electronics

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SJ116

Renesas Electronics

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SJ56H

Renesas Electronics

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SJ55

Renesas Electronics

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

2SC2820

Renesas Electronics

NPN

SINGLE

NO

125 W

20 A

1

Other Transistors

15

140 Cel

IRF9241

Samsung

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

IRF9143

Samsung

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IRF9242

Samsung

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9 A

e0

IRF9142

Samsung

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IRF9141

Samsung

P-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

19 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

19 A

e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.