2 W Other Function Transistors 1,061

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
IRF5803D2TRPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	3.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		3.4 A
IRF5806TRPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	MATTE TIN	4 A	2	e3	30	260
IRF5805TRPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	3.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	MATTE TIN	3.8 A	2	e3	30	260
IRF7321D2TRPBF	Infineon Technologies	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	4.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.7 A
IRF7322D1PBFTR	Infineon Technologies	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	5.3 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		5.3 A
IRF7321D2PBF	Infineon Technologies	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	4.7 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.7 A
BCX51H6327XTSA1	Infineon Technologies	PNP	SINGLE	YES		2 W	1 A		1		Other Transistors		40	150 Cel	TIN		1	e3
IRF7316QTRPBF	Infineon Technologies	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		4.9 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.9 A
BCX55H6327XTSA1	Infineon Technologies	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		40	150 Cel	TIN		1	e3
AF4935PSLA	Diodes Incorporated	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		8 A				260
FZT688BTC	Diodes Incorporated	NPN	SINGLE	YES	150 MHz	2 W	4 A		1		Other Transistors		100	150 Cel	MATTE TIN		1	e3		260
AF4935PSL	Diodes Incorporated	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		8 A				260
AF4935PS	Diodes Incorporated	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	8 A		e0
FCX718TC	Diodes Incorporated	PNP	SINGLE	YES	150 MHz	2 W	2.5 A		1		Other Transistors		15	150 Cel
AF4935PSA	Diodes Incorporated	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	8 A		e0
FZT600A	Diodes Incorporated	NPN	DARLINGTON	YES	150 MHz	2 W	2 A				Other Transistors		2000	150 Cel	MATTE TIN		1	e3	30	260
FCX1051ATC	Diodes Incorporated	NPN	SINGLE	YES		2 W	3 A		1		Other Transistors		290	150 Cel	MATTE TIN			e3		260
SSM3J331R(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4 A
SSM6J501NU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	10 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		10 A
SSM6J502NU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		6 A
TPC8401(TE12L)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		2 W				4.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4.5 A
2SA2066(TE12L,F)	Toshiba	PNP	SINGLE	YES		2 W	2 A		1		Other Transistors		200	150 Cel
TPC8302(TE12L)	Toshiba	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		3.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	3.5 A		e0
2SC5819(TE12L)	Toshiba	NPN	SINGLE	YES		2 W	1.5 A		1		Other Transistors		400	150 Cel
2SA2069(TE12L)	Toshiba	PNP	SINGLE	YES		2 W	1.5 A		1		Other Transistors		200	150 Cel
TPC8402(TE12L)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		2 W				4.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	4.5 A		e0
TPC6101(TE12L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	4.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	4.5 A		e0
2SA2069(TE12L,F)	Toshiba	PNP	SINGLE	YES		2 W	1.5 A		1		Other Transistors		200	150 Cel
SSM6G18NU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	2 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		2 A
2SA2066(TE12L)	Toshiba	PNP	SINGLE	YES		2 W	2 A		1		Other Transistors		200	150 Cel
TPC8301(TE12L)	Toshiba	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		3.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		3.5 A
2SC5785(TE12L)	Toshiba	NPN	SINGLE	YES		2 W	2 A		1		Other Transistors		400	150 Cel
TPC8303(TE12L)	Toshiba	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		4.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	4.5 A		e0
SSM3J327R(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	3.9 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		3.9 A
2SC5819(TE12L,F)	Toshiba	NPN	SINGLE	YES		2 W	1.5 A		1		Other Transistors		400	150 Cel
TPC6102(TE12L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	4.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	4.5 A		e0
2SC4793(M)	Toshiba	NPN	SINGLE	NO		2 W	1 A		1		Other Transistors		100	150 Cel
2SC5810(TE12L)	Toshiba	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		400	150 Cel
2SC5810(TE12L,F)	Toshiba	NPN	SINGLE	YES		2 W	1 A		1		Other Transistors		400	150 Cel
TPC8403(TE12L)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		2 W				4.5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	4.5 A		e0
2SC5785(TE12L,F)	Toshiba	NPN	SINGLE	YES		2 W	2 A		1		Other Transistors		400	150 Cel
TPC8305(TE12L)	Toshiba	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	Tin/Lead (Sn/Pb)	5 A		e0
SSM3J332R(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		6 A
SSM6P47NU(TE85L)	Toshiba	P-CHANNEL		YES		2 W		ENHANCEMENT MODE		4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4 A
SSM6J503NU(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		6 A
SSM3J334R(TE85L)	Toshiba	P-CHANNEL	SINGLE	YES		2 W		ENHANCEMENT MODE	1	4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel		4 A
2SA1837(T)	Toshiba	PNP	SINGLE	NO		2 W	1 A		1		Other Transistors		100	150 Cel
2SA1837(M)	Toshiba	PNP	SINGLE	NO		2 W	1 A		1		Other Transistors		100	150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.