30 W Other Function Transistors 283

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SA1289S

Onsemi

PNP

SINGLE

NO

100 MHz

30 W

5 A

1

Other Transistors

140

140 Cel

2SA1289Q

Onsemi

PNP

SINGLE

NO

100 MHz

30 W

5 A

1

Other Transistors

70

140 Cel

2SA1289

Onsemi

PNP

SINGLE

NO

100 MHz

30 W

5 A

1

Other Transistors

70

140 Cel

2SA1471Q

Onsemi

PNP

SINGLE

NO

100 MHz

30 W

10 A

1

Other Transistors

70

140 Cel

2SA1471

Onsemi

PNP

SINGLE

NO

100 MHz

30 W

10 A

1

Other Transistors

70

140 Cel

2N5016

STMicroelectronics

NPN

SINGLE

NO

500 MHz

30 W

4.5 A

1

Other Transistors

10

175 Cel

2N5637

STMicroelectronics

NPN

SINGLE

NO

400 MHz

30 W

3 A

1

Other Transistors

5

200 Cel

BUR10

STMicroelectronics

NPN

SINGLE

NO

50 MHz

30 W

5 A

1

Other Transistors

40

175 Cel

TIN LEAD

e0

SD1222-5

STMicroelectronics

NPN

SINGLE

NO

250 MHz

30 W

3 A

1

Other Transistors

5

200 Cel

IRFI9520N

Infineon Technologies

P-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

5.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

5.5 A

e0

2SD1411A-Y(Q)

Toshiba

NPN

NO

30 W

7 A

Other Transistors

120

150 Cel

TPCA8107-H(TE12L,Q)

Toshiba

P-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

7.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.5 A

TPCA8107-H(TE12L)

Toshiba

P-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

7.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.5 A

TPCC8137(TE12L)

Toshiba

P-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

13 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

2SJ407(F)

Toshiba

P-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

2SD1411A-O(Q)

Toshiba

NPN

NO

30 W

7 A

Other Transistors

70

150 Cel

2SD1356

Toshiba

NPN

SINGLE

NO

12 MHz

30 W

3 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD1407A-O(Q)

Toshiba

NPN

SINGLE

NO

30 W

5 A

1

Other Transistors

70

150 Cel

2SD1407A-R(Q)

Toshiba

NPN

SINGLE

NO

30 W

5 A

1

Other Transistors

40

150 Cel

2SJ512(Q)

Toshiba

P-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

TPCC8137(TE12L1)

Toshiba

P-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

13 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

2SC1676

Toshiba

NPN

SINGLE

NO

200 MHz

30 W

3 A

1

Other Transistors

10

175 Cel

2SB997

Toshiba

PNP

SINGLE

NO

30 W

7 A

1

Other Transistors

2000

140 Cel

Tin/Lead (Sn/Pb)

e0

2SB998

Toshiba

PNP

SINGLE

NO

30 W

7 A

1

Other Transistors

2000

140 Cel

Tin/Lead (Sn/Pb)

e0

2SB994

Toshiba

PNP

SINGLE

NO

9 MHz

30 W

3 A

1

Other Transistors

60

140 Cel

Tin/Lead (Sn/Pb)

e0

2SC3308

Toshiba

NPN

SINGLE

NO

30 W

5 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD1357

Toshiba

NPN

SINGLE

NO

30 W

7 A

1

Other Transistors

2000

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD1354

Toshiba

NPN

SINGLE

NO

3 MHz

30 W

3 A

1

Other Transistors

60

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD1358

Toshiba

NPN

SINGLE

NO

30 W

7 A

1

Other Transistors

2000

140 Cel

Tin/Lead (Sn/Pb)

e0

2SJ407(Q)

Toshiba

P-CHANNEL

SINGLE

NO

30 W

ENHANCEMENT MODE

1

5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5 A

2SD1407A-R(F)

Toshiba

NPN

SINGLE

NO

30 W

5 A

1

Other Transistors

40

150 Cel

2SD1353

Toshiba

NPN

SINGLE

NO

5 MHz

30 W

3 A

1

Other Transistors

200

140 Cel

Tin/Lead (Sn/Pb)

e0

2SB999

Toshiba

PNP

SINGLE

NO

30 W

7 A

1

Other Transistors

2000

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD684

Toshiba

NPN

DARLINGTON

NO

30 W

6 A

Other Transistors

1500

150 Cel

Tin/Lead (Sn/Pb)

e0

2SD1407A-Y(Q)

Toshiba

NPN

SINGLE

NO

30 W

5 A

1

Other Transistors

120

150 Cel

2SB996

Toshiba

PNP

SINGLE

NO

9 MHz

30 W

3 A

1

Other Transistors

40

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD684A

Toshiba

NPN

DARLINGTON

NO

30 W

6 A

Other Transistors

600

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC5439(Q)

Toshiba

NPN

SINGLE

NO

30 W

8 A

1

Other Transistors

14

150 Cel

2SD1359

Toshiba

NPN

SINGLE

NO

30 W

7 A

1

Other Transistors

2000

140 Cel

Tin/Lead (Sn/Pb)

e0

TTB002(Q)

Toshiba

PNP

SINGLE

YES

30 W

3 A

1

Other Transistors

100

175 Cel

2SA1308

Toshiba

PNP

SINGLE

NO

30 W

5 A

1

Other Transistors

70

140 Cel

Tin/Lead (Sn/Pb)

e0

2SD560KB-S3-AZ

Renesas Electronics

NPN

DARLINGTON

NO

30 W

5 A

Other Transistors

5000

150 Cel

2SD560MB-S3-AZ

Renesas Electronics

NPN

DARLINGTON

NO

30 W

5 A

Other Transistors

2000

150 Cel

2SB601L-S-AZ

Renesas Electronics

PNP

DARLINGTON

NO

30 W

5 A

Other Transistors

3000

150 Cel

2SJ530(S)-(3)

Renesas Electronics

P-CHANNEL

SINGLE

YES

30 W

ENHANCEMENT MODE

1

15 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

15 A

2SB601L-AZ

Renesas Electronics

PNP

DARLINGTON

NO

30 W

5 A

Other Transistors

3000

150 Cel

2SB1097L-AZ

Renesas Electronics

PNP

SINGLE

NO

30 W

7 A

1

Other Transistors

60

150 Cel

2SD560KB-AZ

Renesas Electronics

NPN

DARLINGTON

NO

30 W

5 A

Other Transistors

5000

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.