NXP Semiconductors Other Function Transistors 421

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BSS84AKMB,315

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

.23 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.23 A

1

e3

30

260

BSS84AKV,115

NXP Semiconductors

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.17 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.17 A

1

e3

30

260

BC847B/DG,215

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

200

150 Cel

BC847C/AU,215

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

420

150 Cel

NX3008CBKS,115

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

.445 W

ENHANCEMENT MODE

.35 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.35 A

1

e3

30

260

PMF170XP,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

1 A

1

e3

30

260

BCX56-16,147

NXP Semiconductors

NPN

SINGLE

YES

1 W

1 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

BFT92W/A2,115

NXP Semiconductors

PNP

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

150 Cel

NX3008PBKW,115

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.31 W

ENHANCEMENT MODE

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.2 A

1

e3

30

260

PMBT3904YS,115

NXP Semiconductors

NPN

NO

300 MHz

.35 W

.2 A

Other Transistors

100

150 Cel

TIN

1

e3

30

260

PMBT3904VS,115

NXP Semiconductors

NPN

YES

300 MHz

.36 W

.2 A

Other Transistors

100

150 Cel

TIN

1

e3

30

260

BF862,235

NXP Semiconductors

N-CHANNEL

YES

.225 W

Other Transistors

JUNCTION

150 Cel

TIN

1

e3

30

260

BF862/A2,215

NXP Semiconductors

N-CHANNEL

YES

.3 W

Other Transistors

JUNCTION

150 Cel

PMBT3904MB,315

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.59 W

.2 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

PMBT3904M,315

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.59 W

.2 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

BC847CMB,315

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

420

150 Cel

TIN

1

e3

30

260

PMBT2222A/G,215

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.25 W

.6 A

1

Other Transistors

40

150 Cel

-65 Cel

PMBT2222A/CU,215

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

-65 Cel

PMBT2222A/DG,215

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

-65 Cel

PMBT2222A/8,215

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

-65 Cel

BFR93AW,135

NXP Semiconductors

NPN

SINGLE

YES

4500 MHz

.3 W

.035 A

1

Other Transistors

40

150 Cel

TIN

e3

30

260

PMBT2222A/IN,215

NXP Semiconductors

NPN

SINGLE

YES

300 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

-65 Cel

PMBT3906VS,115

NXP Semiconductors

PNP

YES

250 MHz

.36 W

.2 A

Other Transistors

100

150 Cel

TIN

1

e3

30

260

NX3008PBKS,115

NXP Semiconductors

P-CHANNEL

YES

.445 W

ENHANCEMENT MODE

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.2 A

1

e3

30

260

PMBT2907A/DG,215

NXP Semiconductors

PNP

SINGLE

YES

200 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

PBSS4032PT,215

NXP Semiconductors

PNP

SINGLE

YES

1.1 W

2.4 A

1

Other Transistors

150

150 Cel

TIN

1

e3

30

260

NX1029X,115

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

1.09 W

ENHANCEMENT MODE

.33 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.33 A

1

e3

30

260

PMBT2907A/CU,215

NXP Semiconductors

PNP

SINGLE

YES

200 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

BC847BMB,315

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

200

150 Cel

TIN

1

e3

30

260

PMBT2907A/AU,215

NXP Semiconductors

PNP

SINGLE

YES

200 MHz

.25 W

.6 A

1

Other Transistors

100

150 Cel

BC847AMB,315

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

110

150 Cel

TIN

1

e3

30

260

PMGD290UCEAX

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

.445 W

ENHANCEMENT MODE

.725 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.725 A

NX3008PBKMB,315

NXP Semiconductors

P-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.3 A

1

e3

30

260

PMBT3906MB,315

NXP Semiconductors

PNP

SINGLE

YES

250 MHz

.59 W

.2 A

1

Other Transistors

100

150 Cel

TIN

1

e3

30

260

PMDXB1200UPEZ

NXP Semiconductors

P-CHANNEL

YES

4.03 W

ENHANCEMENT MODE

.41 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.41 A

BC847BW/DG,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

1

Other Transistors

200

150 Cel

BFR520,235

NXP Semiconductors

NPN

SINGLE

YES

.3 W

.07 A

1

Other Transistors

60

150 Cel

TIN

1

e3

30

260

PMZB350UPE,315

NXP Semiconductors

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.55 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.55 A

1

e3

30

260

BC846BW/DG,115

NXP Semiconductors

NPN

SINGLE

YES

100 MHz

.2 W

.1 A

1

Other Transistors

200

150 Cel

NX3008CBKV,115

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.22 A

1

e3

30

260

PBSS4041NT,215

NXP Semiconductors

NPN

SINGLE

YES

1.1 W

3.8 A

1

Other Transistors

30

150 Cel

TIN

1

e3

30

260

PBSS4041NZ,115

NXP Semiconductors

NPN

SINGLE

YES

2.6 W

7 A

1

Other Transistors

50

150 Cel

TIN

1

e3

30

260

BFR520/C,215

NXP Semiconductors

NPN

SINGLE

YES

.3 W

.07 A

1

Other Transistors

60

175 Cel

PMXB120EPEZ

NXP Semiconductors

P-CHANNEL

SINGLE

YES

8.33 W

ENHANCEMENT MODE

1

2.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

PHD13005,127

NXP Semiconductors

NPN

SINGLE

NO

75 W

4 A

1

Other Transistors

10

150 Cel

Tin (Sn)

e3

PMCXB900UEZ

NXP Semiconductors

N-CHANNEL AND P-CHANNEL

YES

.38 W

ENHANCEMENT MODE

.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

PBSS4230QAZ

NXP Semiconductors

NPN

SINGLE

YES

130 MHz

1 W

2 A

1

Other Transistors

100

150 Cel

BCX53-16/B,115

NXP Semiconductors

PNP

SINGLE

YES

1.35 W

1 A

1

Other Transistors

100

150 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.