Toshiba Other Function Transistors 2,056

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

2SC2230-GR(TPE6)

Toshiba

NPN

SINGLE

NO

50 MHz

.8 W

.1 A

1

Other Transistors

200

150 Cel

SSM6J215FE(TPL3,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.4 A

SSM6L35FE(TE85L)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.18 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.18 A

TPC8405(TE12L,Q)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

ENHANCEMENT MODE

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

MT3S19R(TE85L)

Toshiba

NPN

SINGLE

YES

11500 MHz

.32 W

.08 A

1

Other Transistors

100

150 Cel

TPCP8505(TE85L,F)

Toshiba

2SC1815-Y(F,T)

Toshiba

NPN

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

120

125 Cel

SSM3J35CT(TPL3)

Toshiba

P-CHANNEL

SINGLE

YES

.1 W

ENHANCEMENT MODE

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

2SD685

Toshiba

NPN

DARLINGTON

NO

100 W

10 A

Other Transistors

400

150 Cel

Tin/Lead (Sn/Pb)

e0

2SK3068(TE24L,Q)

Toshiba

2SC384

Toshiba

NPN

SINGLE

NO

500 MHz

.2 W

.05 A

1

Other Transistors

50

125 Cel

Tin/Lead (Sn/Pb)

e0

2SA2061(TE85L)

Toshiba

PNP

SINGLE

YES

1 W

2.5 A

1

Other Transistors

200

150 Cel

2SK1830(TE85L)

Toshiba

SSM6N04FU(TE85L)

Toshiba

SSM3J02F(TE85L,F)

Toshiba

SSM6P54TU(TE85L)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

1.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

2SC6136(TPE2)

Toshiba

NPN

SINGLE

NO

.5 W

.7 A

1

Other Transistors

80

150 Cel

SSM6K22FE(TE85L)

Toshiba

TTC4116FU(TE85L)

Toshiba

NPN

SINGLE

YES

80 MHz

.1 W

.15 A

1

Other Transistors

120

150 Cel

SSM6L35FE(TPL3,F)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

.15 W

ENHANCEMENT MODE

.18 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.18 A

2SC5948O(Q)

Toshiba

NPN

SINGLE

NO

200 W

12 A

1

Other Transistors

55

150 Cel

SSM6J26FE(TE85L)

Toshiba

2SJ338-Y(TE16R1)

Toshiba

P-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

2SJ305(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

2SK1827(TE85L,F)

Toshiba

SSM3J05FU(TE85L,F)

Toshiba

2SC389

Toshiba

NPN

SINGLE

NO

500 MHz

.15 W

.02 A

1

Other Transistors

150 Cel

Tin/Lead (Sn/Pb)

e0

2SC2793

Toshiba

2SD1525(Q)

Toshiba

NPN

DARLINGTON

NO

150 W

30 A

Other Transistors

200

150 Cel

2SC2805

Toshiba

NPN

SINGLE

YES

1500 MHz

.2 W

.05 A

1

Other Transistors

20

125 Cel

Tin/Lead (Sn/Pb)

e0

2SK2993(Q)

Toshiba

SSM3J306T(TE85L,F)

Toshiba

P-CHANNEL

SINGLE

YES

.7 W

ENHANCEMENT MODE

1

2.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.4 A

2SC5122(TPE6)

Toshiba

NPN

SINGLE

NO

.9 W

.05 A

1

Other Transistors

100

150 Cel

SSM6J501NU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

2SC1000GTM

Toshiba

NPN

SINGLE

NO

80 MHz

.4 W

.15 A

1

Other Transistors

200

Tin/Lead (Sn/Pb)

e0

RN1967FE(TE85L)

Toshiba

SSM3J109TU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2 A

TPCP8J01(TE85L,F)

Toshiba

.1 A

.3 V

1

Other Transistors

80

150 Cel

SSM6J502NU(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

2SA2034(TE16L1)

Toshiba

PNP

SINGLE

YES

15 W

2 A

1

Other Transistors

80

150 Cel

TPC8407(TE12L,Q)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

1.5 W

ENHANCEMENT MODE

9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

9 A

HN4A08J(TE85L)

Toshiba

2SC3303Y(SM)

Toshiba

NPN

SINGLE

YES

20 W

5 A

1

Other Transistors

120

150 Cel

Tin/Lead (Sn/Pb)

e0

TTA003(TE16L1)

Toshiba

PNP

SINGLE

YES

10 W

3 A

1

Other Transistors

100

150 Cel

TPCF8402(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL

YES

1.35 W

ENHANCEMENT MODE

4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

SSM6P28TU(TE85L,F)

Toshiba

P-CHANNEL

YES

.5 W

ENHANCEMENT MODE

.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.8 A

2SJ168(TE85L)

Toshiba

P-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

MT3S03AT(TE85L)

Toshiba

NPN

SINGLE

YES

7000 MHz

.1 W

.04 A

1

Other Transistors

80

125 Cel

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.