Toshiba Other Function Transistors 2,056

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Nominal Transition Frequency (fT)	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Operating Mode	No. of Elements	Maximum Drain Current (Abs) (ID)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Terminal Finish	Maximum Drain Current (ID)	Moisture Sensitivity Level (MSL)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SC5200O(Q)	Toshiba	NPN	SINGLE	NO		150 W	15 A		1		Other Transistors			80	150 Cel					30	260
2SA1943-O(Q)	Toshiba	PNP	SINGLE	NO		150 W	15 A		1		Other Transistors			80	150 Cel
2SA2056(TE85L,F)	Toshiba	PNP	SINGLE	YES		1 W	2 A		1		Other Transistors			200	150 Cel
TTC5200(Q)	Toshiba	NPN	SINGLE	NO		150 W	15 A		1		Other Transistors			80	150 Cel
2SC5200R(Q)	Toshiba	NPN	SINGLE	NO		150 W	15 A		1		Other Transistors			55	150 Cel
2SC1815-Y(TPE2)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors			120	125 Cel
2SA1943-R(Q)	Toshiba	PNP	SINGLE	NO		150 W	15 A		1		Other Transistors			55	150 Cel
2SC5692(TE85L,F)	Toshiba	NPN	SINGLE	YES		1 W	2.5 A		1		Other Transistors			400	150 Cel
2SC1815-Y(T)	Toshiba	NPN	SINGLE	NO	80 MHz	.4 W	.15 A		1		Other Transistors			120	125 Cel
SSM6L09FU(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.3 W		ENHANCEMENT MODE		.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		.4 A			30	260
2SA1095	Toshiba	PNP	SINGLE	NO	60 MHz	150 W	15 A		1		Other Transistors			55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SA1941-O(Q)	Toshiba	PNP	SINGLE	NO		100 W	10 A		1		Other Transistors			80	150 Cel
2SA1941-R(Q)	Toshiba	PNP	SINGLE	NO		100 W	10 A		1		Other Transistors			55	150 Cel
2SK3868(Q,M)	Toshiba
2SC4215O(TE85L,F)	Toshiba	NPN	SINGLE	YES	260 MHz	.1 W	.02 A		1		Other Transistors			70	125 Cel
2SC5358O(Q)	Toshiba	NPN	SINGLE	NO		150 W	15 A		1		Other Transistors			80	150 Cel
2SD1410A(F)	Toshiba
2SC5359R(Q)	Toshiba	NPN	SINGLE	NO		180 W	15 A		1		Other Transistors			55	150 Cel
2SC5095O(TE85L,F)	Toshiba	NPN	SINGLE	YES	7000 MHz	.1 W	.015 A		1		Other Transistors			80	125 Cel
2SC5949O(Q)	Toshiba	NPN	SINGLE	NO		220 W	15 A		1		Other Transistors			80	150 Cel
SSM6J214FE(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.7 W		ENHANCEMENT MODE	1	3.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		3.6 A
2SA2121O(Q)	Toshiba	PNP	SINGLE	NO		220 W	15 A		1		Other Transistors			80	150 Cel
2SC3324-BL(TE85L,F)	Toshiba	NPN	SINGLE	YES		.15 W	.1 A		1		Other Transistors			350	125 Cel
2SC5198O(Q)	Toshiba	NPN	SINGLE	NO		100 W	10 A		1		Other Transistors			80	150 Cel					30	260
3SK121	Toshiba	N-CHANNEL								.05 A	Other Transistors	METAL SEMICONDUCTOR	.2 W			Tin/Lead (Sn/Pb)	.05 A		e0
SSM6L14FE(TE85L,F)	Toshiba	N-CHANNEL AND P-CHANNEL		YES		.15 W		ENHANCEMENT MODE		.8 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		.8 A			30	260
TTA1943(Q)	Toshiba	PNP	SINGLE	NO		150 W	15 A		1		Other Transistors			80	150 Cel
2SK3911(Q)	Toshiba
SSM6J215FE(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		.7 W		ENHANCEMENT MODE	1	3.4 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		3.4 A
2SA1312-BL(TE85L,F)	Toshiba	PNP	SINGLE	YES		.15 W	.1 A		1		Other Transistors			350	125 Cel
2SB755	Toshiba	PNP	SINGLE	NO	20 MHz	120 W	12 A		1		Other Transistors			55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SC2565	Toshiba	NPN	SINGLE	NO	80 MHz	150 W	15 A		1		Other Transistors			55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SC2706	Toshiba	NPN	SINGLE	NO		100 W	10 A		1		Other Transistors			55	150 Cel	Tin/Lead (Sn/Pb)			e0
2SC5198R(Q)	Toshiba	NPN	SINGLE	NO		100 W	10 A		1		Other Transistors			55	150 Cel
2SC5712(TE12L,F)	Toshiba	NPN	SINGLE	YES		2.5 W	3 A		1		Other Transistors			400	150 Cel
2SC5713(TE12L,F)	Toshiba	NPN	SINGLE	YES		2.5 W	4 A		1		Other Transistors			400	150 Cel
2SD845	Toshiba	NPN	SINGLE	NO	20 MHz	120 W	12 A		1		Other Transistors			55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SJ681(Q)	Toshiba	P-CHANNEL	SINGLE	NO		20 W		ENHANCEMENT MODE	1	5 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		5 A
2SK1119(F)	Toshiba
MT3S111(TE85L,F)	Toshiba	NPN	SINGLE	YES	9000 MHz	.7 W	.1 A		1		Other Transistors			200	150 Cel
SSM3J317T(TE85L,F)	Toshiba	P-CHANNEL	SINGLE	YES		1.4 W		ENHANCEMENT MODE	1	3.6 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		3.6 A
TJ15P04M3,RQ(S	Toshiba	P-CHANNEL	SINGLE	YES		29 W		ENHANCEMENT MODE	1	15 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel		15 A
TPC8408,LQ(S	Toshiba	N-CHANNEL AND P-CHANNEL		YES		2.2 W		ENHANCEMENT MODE		6.1 A	Other Transistors	METAL-OXIDE SEMICONDUCTOR			150 Cel	TIN	6.1 A	1	e3		260
2SA1146	Toshiba	PNP	SINGLE	NO	70 MHz	100 W	10 A		1		Other Transistors			55	140 Cel	Tin/Lead (Sn/Pb)			e0
2SA1873-GR(TE85L,F)	Toshiba	PNP		YES	80 MHz	.2 W	.15 A				Other Transistors			200	125 Cel
2SA2070(TE12L,F)	Toshiba	PNP	SINGLE	YES		2 W	1 A		1		Other Transistors			125	150 Cel
2SC1625	Toshiba	NPN	SINGLE	NO	30 MHz	15 W	1 A		1		Other Transistors			70	140 Cel	Tin/Lead (Sn/Pb)			e0
2SC3298	Toshiba	NPN	SINGLE	NO	100 MHz	25 W	1.5 A		1		Other Transistors			70	150 Cel	Tin/Lead (Sn/Pb)			e0

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.