Vishay Intertechnology Other Function Transistors 105

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C)

BFS17

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

150 Cel

Matte Tin (Sn)

e3

SI4532ADY

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

YES

2 W

ENHANCEMENT MODE

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

SI7463DP

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

5.4 W

ENHANCEMENT MODE

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

135 Cel

Tin/Lead (Sn/Pb)

11 A

e0

BFR92AR

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.025 A

1

Other Transistors

150 Cel

Matte Tin (Sn)

e3

BFS17W

Vishay Intertechnology

NPN

SINGLE

YES

1600 MHz

.3 W

.05 A

1

Other Transistors

25

150 Cel

BFR93AW-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.05 A

1

Other Transistors

40

150 Cel

BFR92AW-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.03 A

1

Other Transistors

65

150 Cel

J109

Vishay Intertechnology

N-CHANNEL

NO

.4 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

SI2301DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

SI2301DS-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

2.3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

2.3 A

1

e3

260

SI4542DY

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

YES

2 W

6.9 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6.9 A

e0

SI4835BDY

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

7.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.4 A

BC337-25-BULK

Vishay Intertechnology

NPN

SINGLE

NO

.625 W

.8 A

1

Other Transistors

160

150 Cel

Tin/Lead (Sn/Pb)

e0

BC807-16

Vishay Intertechnology

PNP

SINGLE

YES

.35 W

1.2 A

1

Other Transistors

100

150 Cel

Matte Tin (Sn)

e3

IRFR9024TR

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

42 W

ENHANCEMENT MODE

1

8.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

8.8 A

SI4559EY

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

YES

2.4 W

ENHANCEMENT MODE

4.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

4.5 A

SST4118

Vishay Intertechnology

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

BCW68G

Vishay Intertechnology

PNP

SINGLE

YES

.33 W

.8 A

1

Other Transistors

50

150 Cel

Matte Tin (Sn)

e3

BFS17A

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.025 A

1

Other Transistors

20

175 Cel

Matte Tin (Sn)

e3

BCW69

Vishay Intertechnology

PNP

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

120

150 Cel

Matte Tin (Sn)

e3

J111

Vishay Intertechnology

N-CHANNEL

NO

.4 W

Other Transistors

JUNCTION

150 Cel

Tin/Lead (Sn/Pb)

e0

BC848B

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.3 W

.1 A

1

Other Transistors

200

150 Cel

Matte Tin (Sn)

1

e3

BFR93AR

Vishay Intertechnology

NPN

SINGLE

YES

.3 W

.035 A

1

Other Transistors

40

175 Cel

Matte Tin (Sn)

e3

SI2333DS-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

1.25 W

ENHANCEMENT MODE

1

4.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.1 A

e0

BC858C

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

420

150 Cel

Matte Tin (Sn)

e3

BCW71

Vishay Intertechnology

NPN

SINGLE

YES

100 MHz

.25 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

e3

BFR93AGELB-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.05 A

1

Other Transistors

40

150 Cel

Matte Tin (Sn)

e3

BFR93ARGELB-GS08

Vishay Intertechnology

NPN

SINGLE

YES

.2 W

.05 A

1

Other Transistors

40

150 Cel

Matte Tin (Sn)

e3

SI3445DV-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

5.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5.6 A

e0

SUB65P06-20-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

187 W

ENHANCEMENT MODE

1

65 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

Matte Tin (Sn) - with Nickel (Ni) barrier

65 A

1

e3

BC327-40-BULK

Vishay Intertechnology

PNP

SINGLE

NO

.625 W

.8 A

1

Other Transistors

250

150 Cel

Tin/Lead (Sn/Pb)

e0

BC856A

Vishay Intertechnology

PNP

SINGLE

YES

.31 W

.1 A

1

Other Transistors

110

150 Cel

Matte Tin (Sn)

e3

SI3443DV-T1

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

3.4 A

e0

SI3443DV-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

3.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

3.4 A

1

e3

30

260

SST201-T1-E3

Vishay Intertechnology

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

2N4339-E3

Vishay Intertechnology

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

2N4857A-E3

Vishay Intertechnology

N-CHANNEL

NO

.36 W

Other Transistors

JUNCTION

200 Cel

Matte Tin (Sn)

1

e3

2N5432-E3

Vishay Intertechnology

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

BCW66G

Vishay Intertechnology

NPN

SINGLE

YES

.33 W

.8 A

1

Other Transistors

50

150 Cel

Matte Tin (Sn)

e3

IRF9530STRR

Vishay Intertechnology

IRFBF30S

Vishay Intertechnology

MMBT3906/E9

Vishay Intertechnology

PNP

SINGLE

YES

250 MHz

.3 W

.2 A

1

Other Transistors

30

150 Cel

Matte Tin (Sn)

e3

S822T

Vishay Intertechnology

NPN

SINGLE

YES

4700 MHz

.03 W

.008 A

1

Other Transistors

40

150 Cel

SI4925DY-T1

Vishay Intertechnology

P-CHANNEL

YES

2 W

ENHANCEMENT MODE

4.7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.7 A

e0

SST201-T1

Vishay Intertechnology

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

SST4118-T1

Vishay Intertechnology

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

SST4118-T1-E3

Vishay Intertechnology

N-CHANNEL

YES

.35 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

2N4338-E3

Vishay Intertechnology

N-CHANNEL

NO

.3 W

Other Transistors

JUNCTION

200 Cel

MATTE TIN

1

e3

40

260

Other Function Transistors

Other function transistors are a category of transistors that perform specialized functions beyond basic switching and amplification. These transistors are designed to perform specific tasks in electronic circuits, and are used in various applications such as signal processing, voltage regulation, and power management.

Some examples of other function transistors include:

1. Darlington Transistors: Used in high-current and high-voltage applications where a single transistor cannot provide the required gain. Darlington transistors consist of two transistors connected in series, which provide a high gain and low input current.

2. Schottky Transistors: Used in high-speed digital circuits to reduce switching losses and improve efficiency. Schottky transistors use a Schottky barrier diode in combination with a transistor to reduce the voltage drop across the device.

3. Phototransistors: Used in applications where a signal needs to be detected and converted into an electrical signal. Phototransistors use a photodiode to detect light and a transistor to amplify the signal.

4. Bipolar Junction Transistors (BJT): Used in analog circuits for amplification and switching applications. BJTs have a high current gain and low input resistance, making them useful in low-power applications.

5. Junction Field-Effect Transistors (JFET): Used in low-noise and high-impedance applications, such as audio amplifiers and analog switches. JFETs have a high input impedance and low noise, making them suitable for low-power applications.

Other function transistors are available in various sizes and configurations, depending on the specific application. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance. Proper selection and design of other function transistors are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit.