DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Power Bipolar Junction Transistors (BJT) 1,480

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  2. Power Bipolar Junction Transistors (BJT)
Manufacturers
    • Allegro MicroSystems
    • Api Technologies
    • Asi Semiconductor
    • Bourns
    • Central Semiconductor
    • Comchip Technology
    • Continental Device India
    • Digitron Semiconductors
    • Diodes Incorporated
    • Diotec Semiconductor Ag
    • Fairchild Semiconductor
    • Fuji Electric
    • Fujitsu Semiconductor America
    • General Semiconductor
    • Hbcontrols
    • Ik Semicon
    • Inchange Semiconductor
    • Infineon Technologies
    • Intersil
    • Kec
    • Littelfuse
    • Loras Industries
    • Micro Commercial Components
    • Microchip Technology
    • Microsemi
    • Motorola
    • NXP Semiconductors
    • National Semiconductor
    • New Jersey Semiconductor Products
    • Nexperia
    • Nte Electronics
    • Onsemi
    • Panjit International
    • Philips Semiconductors
    • ROHM
    • Rectron
    • Renesas Electronics
    • STMicroelectronics
    • Samsung
    • Sanken Electric
    • Sanyo Electric
    • Secos
    • Semiconductors
    • Texas Instruments
    • Toshiba
    • Tt Electronics Plc
    • Vishay Intertechnology
    • Zetex Plc
Polarity or Channel Type
    • N-CHANNEL
    • NPN
    • NPN AND PNP
    • PNP
Configuration (1)
    • DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    • 2 BANKS, COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • 2 BANKS, COMMON EMITTER, 2 ELEMENTS
    • 2 BANKS, DARLINGTON
    • 2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    • 3 BANKS, DARLINGTON
    • 4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    • 4 BANKS, DARLINGTON WITH BUILT-IN RESISTOR
    • 6 BANKS, DARLINGTON
    • 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
    • BRIDGE, 4 ELEMENTS
    • COMMON EMITTER, 2 ELEMENTS
    • COMMON EMITTER, 4 ELEMENTS
    • COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE
    • COMMON EMITTER, 8 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
    • COMPLEX
    • DARLINGTON
    • DARLINGTON WITH BUILT-IN DIODE
    • DARLINGTON WITH BUILT-IN RESISTOR
    • DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
    • DARLINGTON, 4 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
    • SEPARATE, 2 ELEMENTS
    • SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    • SEPARATE, 4 ELEMENTS
    • SINGLE
    • SINGLE WITH BUILT-IN DIODE
    • SINGLE WITH BUILT-IN DIODE AND RESISTOR
    • SINGLE WITH BUILT-IN FET AND DIODE
    • SINGLE WITH BUILT-IN RESISTOR
    • Single
Surface Mount
    • NO
    • YES
Nominal Transition Frequency (fT)
    • .03 MHz
    • .05 MHz
    • .07 MHz
    • .08 MHz
    • .1 MHz
    • .2 MHz
    • .225 MHz
    • .25 MHz
    • .26 MHz
    • .28 MHz
    • .4 MHz
    • .43 MHz
    • .8 MHz
    • 1 MHz
    • 1.5 MHz
    • 1.7 MHz
    • 10 MHz
    • 100 MHz
    • 105 MHz
    • 11 MHz
    • 11.5 MHz
    • 110 MHz
    • 115 MHz
    • 116 MHz
    • 12 MHz
    • 120 MHz
    • 125 MHz
    • 128 MHz
    • 13 MHz
    • 130 MHz
    • 135 MHz
    • 14 MHz
    • 140 MHz
    • 142 MHz
    • 145 MHz
    • 15 MHz
    • 15.4 MHz
    • 150 MHz
    • 152 MHz
    • 153 MHz
    • 155 MHz
    • 16 MHz
    • 160 MHz
    • 165 MHz
    • 17 MHz
    • 170 MHz
    • 175 MHz
    • 176 MHz
    • 18 MHz
    • 180 MHz
    • 185 MHz
    • 190 MHz
    • 195 MHz
    • 198 MHz
    • 2 MHz
    • 2.2 MHz
    • 2.4 MHz
    • 2.5 MHz
    • 2.75 MHz
    • 20 MHz
    • 200 MHz
    • 210 MHz
    • 215 MHz
    • 22 MHz
    • 220 MHz
    • 23 MHz
    • 230 MHz
    • 235 MHz
    • 24 MHz
    • 240 MHz
    • 25 MHz
    • 250 MHz
    • 260 MHz
    • 270 MHz
    • 275 MHz
    • 28 MHz
    • 28.4 MHz
    • 280 MHz
    • 285 MHz
    • 290 MHz
    • 295 MHz
    • 3 MHz
    • 3.5 MHz
    • 30 MHz
    • 300 MHz
    • 310 MHz
    • 32 MHz
    • 320 MHz
    • 330 MHz
    • 35 MHz
    • 350 MHz
    • 360 MHz
    • 380 MHz
    • 390 MHz
    • 4 MHz
    • 40 MHz
    • 400 MHz
    • 420 MHz
    • 440 MHz
    • 45 MHz
    • 450 MHz
    • 5 MHz
    • 5.5 MHz
    • 50 MHz
    • 500 MHz
    • 55 MHz
    • 6 MHz
    • 60 MHz
    • 600 MHz
    • 65 MHz
    • 7 MHz
    • 7.5 MHz
    • 70 MHz
    • 72 MHz
    • 75 MHz
    • 8 MHz
    • 80 MHz
    • 82 MHz
    • 85 MHz
    • 9 MHz
    • 90 MHz
    • 95 MHz
    • 96 MHz
    • 97 MHz
Maximum Power Dissipation (Abs)
    • .00125 W
    • .00181 W
    • .35 W
    • .625 W
    • .8 W
    • 1 W
    • 1.1 W
    • 1.16 W
    • 1.18 W
    • 1.2 W
    • 1.25 W
    • 1.28 W
    • 1.3 W
    • 1.31 W
    • 1.33 W
    • 1.34 W
    • 1.35 W
    • 1.37 W
    • 1.4 W
    • 1.5 W
    • 1.54 W
    • 1.56 W
    • 1.6 W
    • 1.65 W
    • 1.67 W
    • 1.7 W
    • 1.75 W
    • 1.8 W
    • 1.81 W
    • 1.96 W
    • 10 W
    • 10.2 W
    • 100 W
    • 105 W
    • 106 W
    • 110 W
    • 113 W
    • 114 W
    • 115 W
    • 117 W
    • 118 W
    • 12 W
    • 12.5 W
    • 12.8 W
    • 120 W
    • 125 W
    • 13 W
    • 130 W
    • 135 W
    • 1380 W
    • 140 W
    • 15 W
    • 15.7 W
    • 150 W
    • 155 W
    • 156 W
    • 16 W
    • 160 W
    • 165 W
    • 166 W
    • 170 W
    • 175 W
    • 178 W
    • 18 W
    • 180 W
    • 19.2 W
    • 190 W
    • 2 W
    • 2.1 W
    • 2.2 W
    • 2.27 W
    • 2.3 W
    • 2.45 W
    • 2.5 W
    • 2.6 W
    • 2.7 W
    • 2.75 W
    • 2.8 W
    • 20 W
    • 200 W
    • 208 W
    • 21 W
    • 210 W
    • 22 W
    • 220 W
    • 225 W
    • 23 W
    • 230 W
    • 24 W
    • 25 W
    • 250 W
    • 26 W
    • 26.3 W
    • 26.6 W
    • 26.7 W
    • 27.8 W
    • 270 W
    • 28 W
    • 290 W
    • 3 W
    • 3.3 W
    • 3.4 W
    • 3.5 W
    • 3.8 W
    • 3.9 W
    • 30 W
    • 300 W
    • 31 W
    • 32 W
    • 33 W
    • 34 W
    • 35 W
    • 35.7 W
    • 350 W
    • 36 W
    • 37 W
    • 375 W
    • 38 W
    • 39 W
    • 4 W
    • 4.2 W
    • 40 W
    • 400 W
    • 42 W
    • 43 W
    • 44 W
    • 45 W
    • 46 W
    • 48 W
    • 5 W
    • 5.7 W
    • 50 W
    • 52 W
    • 54 W
    • 55 W
    • 57 W
    • 58 W
    • 6 W
    • 60 W
    • 62 W
    • 63 W
    • 64 W
    • 65 W
    • 67 W
    • 7 W
    • 7.3 W
    • 7.8 W
    • 70 W
    • 75 W
    • 8 W
    • 8.5 W
    • 80 W
    • 83 W
    • 85 W
    • 87 W
    • 87.5 W
    • 88 W
    • 90 W
    • 95 W
Maximum Collector Current (IC)
    • .02 A
    • .025 A
    • .03 A
    • .04 A
    • .05 A
    • .1 A
    • .14 A
    • .15 A
    • .2 A
    • .3 A
    • .35 A
    • .4 A
    • .5 A
    • .6 A
    • .7 A
    • .75 A
    • .8 A
    • 1 A
    • 1.2 A
    • 1.25 A
    • 1.3 A
    • 1.5 A
    • 1.6 A
    • 1.75 A
    • 1.8 A
    • 10 A
    • 100 A
    • 11 A
    • 12 A
    • 120 A
    • 13 A
    • 14 A
    • 140 A
    • 15 A
    • 150 A
    • 16 A
    • 160 A
    • 17 A
    • 18 A
    • 2 A
    • 2.5 A
    • 20 A
    • 200 A
    • 21 A
    • 210 A
    • 22 A
    • 23 A
    • 24 A
    • 25 A
    • 250 A
    • 26 A
    • 28 A
    • 3 A
    • 3.2 A
    • 3.5 A
    • 30 A
    • 300 A
    • 35 A
    • 36 A
    • 4 A
    • 4.3 A
    • 4.5 A
    • 40 A
    • 400 A
    • 42 A
    • 45 A
    • 48 A
    • 5 A
    • 5.25 A
    • 5.5 A
    • 5.7 A
    • 50 A
    • 500 A
    • 56 A
    • 6 A
    • 6.3 A
    • 6.5 A
    • 60 A
    • 600 A
    • 67 A
    • 7 A
    • 7.5 A
    • 70 A
    • 72 A
    • 75 A
    • 8 A
    • 80 A
    • 800 A
    • 84 A
    • 9 A
    • 90 A
    • 96 A
Package Body Material
    • CERAMIC, GLASS-SEALED
    • CERAMIC, METAL-SEALED COFIRED
    • METAL
    • PLASTIC/EPOXY
    • UNSPECIFIED
Transistor Application
    • AMPLIFIER
    • SWITCHING
Maximum Rise Time (tr)
    • 1000 ns
    • 20 ns
    • 2000 ns
    • 25 ns
    • 40 ns
    • 400 ns
    • 4000 ns
    • 5500 ns
    • 700 ns
Maximum VCEsat
    • .075 V
    • .1 V
    • .11 V
    • .12 V
    • .14 V
    • .16 V
    • .175 V
    • .18 V
    • .185 V
    • .2 V
    • .21 V
    • .22 V
    • .24 V
    • .25 V
    • .255 V
    • .26 V
    • .27 V
    • .28 V
    • .285 V
    • .3 V
    • .31 V
    • .32 V
    • .33 V
    • .34 V
    • .35 V
    • .355 V
    • .36 V
    • .375 V
    • .38 V
    • .39 V
    • .4 V
    • .45 V
    • .5 V
    • .55 V
    • .6 V
    • .65 V
    • .7 V
    • .75 V
    • .8 V
    • .9 V
    • 1 V
    • 1.1 V
    • 1.13 V
    • 1.2 V
    • 1.25 V
    • 1.3 V
    • 1.4 V
    • 1.5 V
    • 1.6 V
    • 1.7 V
    • 1.8 V
    • 1.9 V
    • 10 V
    • 11 V
    • 2 V
    • 2.1 V
    • 2.2 V
    • 2.4 V
    • 2.5 V
    • 2.8 V
    • 3 V
    • 3.5 V
    • 4 V
    • 5 V
    • 8 V
Terminal Form
    • C BEND
    • FLAT
    • GULL WING
    • NO LEAD
    • PIN/PEG
    • SOLDER LUG
    • THROUGH-HOLE
    • UNSPECIFIED
    • WIRE
Package Shape
    • RECTANGULAR
    • ROUND
    • SQUARE
    • UNSPECIFIED
Operating Mode
    • ENHANCEMENT MODE
No. of Elements
    • 1
    • 2
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
Maximum Fall Time (tf)
    • .0003 ns
    • 100 ns
    • 1000 ns
    • 1500 ns
    • 200 ns
    • 2000 ns
    • 220 ns
    • 30 ns
    • 300 ns
    • 3000 ns
    • 350 ns
    • 400 ns
    • 440 ns
    • 500 ns
    • 550 ns
    • 60 ns
    • 600 ns
    • 700 ns
    • 800 ns
    • 900 ns
Maximum Drain Current (Abs) (ID)
    • 12 A
No. of Terminals
    • 10
    • 11
    • 12
    • 14
    • 15
    • 16
    • 17
    • 18
    • 19
    • 2
    • 20
    • 3
    • 4
    • 5
    • 6
    • 7
    • 8
    • 9
Package Style (Meter)
    • CHIP CARRIER
    • CYLINDRICAL
    • DISK BUTTON
    • FLANGE MOUNT
    • FLATPACK
    • IN-LINE
    • POST/STUD MOUNT
    • SMALL OUTLINE
    • UNCASED CHIP
Sub-Category
    • BIP General Purpose Power
    • BIP General Purpose Powers
    • BIP General Purpose Small Signal
    • BIP General Purpose Small Signals
    • FET General Purpose Powers
    • Insulated Gate BIP Transistors
    • Other Transistors
    • Power Bipolar Transistors
Field Effect Transistor Technology
    • METAL-OXIDE SEMICONDUCTOR
Maximum Power Dissipation Ambient
    • .5 W
    • .625 W
    • .92 W
    • 1 W
    • 1.1 W
    • 1.2 W
    • 1.25 W
    • 1.3 W
    • 1.4 W
    • 1.5 W
    • 1.56 W
    • 1.6 W
    • 1.67 W
    • 1.75 W
    • 1.8 W
    • 10 W
    • 100 W
    • 105 W
    • 106 W
    • 110 W
    • 115 W
    • 12.5 W
    • 120 W
    • 1200 W
    • 125 W
    • 130 W
    • 135 W
    • 140 W
    • 15 W
    • 150 W
    • 155 W
    • 160 W
    • 175 W
    • 18 W
    • 180 W
    • 19 W
    • 190 W
    • 2 W
    • 2.1 W
    • 2.2 W
    • 2.27 W
    • 2.7 W
    • 20 W
    • 20.8 W
    • 200 W
    • 225 W
    • 23 W
    • 24 W
    • 25 W
    • 250 W
    • 270 W
    • 29 W
    • 290 W
    • 3 W
    • 3.3 W
    • 3.4 W
    • 30 W
    • 300 W
    • 31.25 W
    • 32 W
    • 33 W
    • 34 W
    • 35 W
    • 350 W
    • 36 W
    • 37 W
    • 40 W
    • 42 W
    • 44 W
    • 45 W
    • 5 W
    • 50 W
    • 52 W
    • 55 W
    • 57 W
    • 6 W
    • 60 W
    • 65 W
    • 7 W
    • 70 W
    • 75 W
    • 8 W
    • 80 W
    • 85 W
    • 90 W
    • 95 W
Minimum DC Current Gain (hFE)
    • 10
    • 10.5
    • 100
    • 1000
    • 10000
    • 11
    • 110
    • 115
    • 12
    • 120
    • 1200
    • 125
    • 13
    • 130
    • 135
    • 14
    • 140
    • 15
    • 150
    • 1500
    • 15000
    • 16
    • 160
    • 1600
    • 17
    • 170
    • 18
    • 180
    • 19
    • 190
    • 2.2
    • 2.22
    • 2.25
    • 2.3
    • 2.5
    • 20
    • 200
    • 2000
    • 20000
    • 210
    • 22
    • 230
    • 24
    • 240
    • 25
    • 250
    • 26
    • 260
    • 27
    • 280
    • 3
    • 3.5
    • 3.8
    • 30
    • 300
    • 3000
    • 31
    • 35
    • 350
    • 4
    • 4.2
    • 4.3
    • 4.4
    • 4.5
    • 4.7
    • 4.8
    • 40
    • 400
    • 4000
    • 42
    • 45
    • 450
    • 5
    • 5.3
    • 5.5
    • 50
    • 500
    • 5000
    • 55
    • 6
    • 6.5
    • 60
    • 600
    • 6000
    • 63
    • 65
    • 7
    • 7.5
    • 70
    • 700
    • 7000
    • 75
    • 750
    • 8
    • 80
    • 800
    • 8000
    • 85
    • 9
    • 90
    • 9000
    • 95
Maximum Operating Temperature
    • 100 Cel
    • 110 Cel
    • 115 Cel
    • 125 Cel
    • 135 Cel
    • 140 Cel
    • 150 Cel
    • 175 Cel
    • 200 Cel
    • 50 Cel
    • 70 Cel
    • 75 Cel
    • 85 Cel
    • 95 Cel
Maximum Collector-Base Capacitance
    • 10 pF
    • 100 pF
    • 1000 pF
    • 105 pF
    • 11 pF
    • 12 pF
    • 120 pF
    • 130 pF
    • 15 pF
    • 150 pF
    • 17 pF
    • 17.4 pF
    • 170 pF
    • 18 pF
    • 185 pF
    • 2 pF
    • 2.2 pF
    • 2.5 pF
    • 20 pF
    • 200 pF
    • 21 pF
    • 22 pF
    • 220 pF
    • 23 pF
    • 25 pF
    • 250 pF
    • 26 pF
    • 27 pF
    • 28 pF
    • 290 pF
    • 3 pF
    • 30 pF
    • 300 pF
    • 31 pF
    • 33 pF
    • 35 pF
    • 350 pF
    • 360 pF
    • 4 pF
    • 4.5 pF
    • 40 pF
    • 400 pF
    • 42 pF
    • 45 pF
    • 48 pF
    • 5 pF
    • 50 pF
    • 500 pF
    • 53 pF
    • 55 pF
    • 56 pF
    • 6 pF
    • 6.5 pF
    • 60 pF
    • 600 pF
    • 65 pF
    • 7 pF
    • 70 pF
    • 75 pF
    • 8 pF
    • 80 pF
    • 800 pF
    • 83 pF
    • 85 pF
    • 95 pF
Transistor Element Material
    • GERMANIUM
    • SILICON
Maximum Collector-Emitter Voltage
    • 10 V
    • 100 V
    • 1000 V
    • 110 V
    • 115 V
    • 12 V
    • 120 V
    • 1200 V
    • 125 V
    • 1300 V
    • 140 V
    • 15 V
    • 150 V
    • 1500 V
    • 16 V
    • 160 V
    • 17.5 V
    • 170 V
    • 175 V
    • 18 V
    • 180 V
    • 20 V
    • 200 V
    • 2000 V
    • 210 V
    • 22 V
    • 225 V
    • 230 V
    • 24 V
    • 25 V
    • 250 V
    • 260 V
    • 27 V
    • 275 V
    • 285 V
    • 30 V
    • 300 V
    • 32 V
    • 325 V
    • 33 V
    • 330 V
    • 35 V
    • 350 V
    • 36 V
    • 370 V
    • 375 V
    • 40 V
    • 400 V
    • 42 V
    • 425 V
    • 440 V
    • 45 V
    • 450 V
    • 460 V
    • 465 V
    • 50 V
    • 500 V
    • 525 V
    • 55 V
    • 550 V
    • 60 V
    • 600 V
    • 65 V
    • 650 V
    • 70 V
    • 700 V
    • 75 V
    • 750 V
    • 80 V
    • 800 V
    • 825 V
    • 85 V
    • 850 V
    • 880 V
    • 90 V
    • 900 V
    • 95 V
Maximum Turn On Time (ton)
    • 1.2 ns
    • 1000 ns
    • 1100 ns
    • 1200 ns
    • 1300 ns
    • 1400 ns
    • 1500 ns
    • 1600 ns
    • 1700 ns
    • 175 ns
    • 1800 ns
    • 200 ns
    • 2000 ns
    • 250 ns
    • 2500 ns
    • 300 ns
    • 3000 ns
    • 35 ns
    • 350 ns
    • 40 ns
    • 400 ns
    • 45 ns
    • 50 ns
    • 500 ns
    • 600 ns
    • 650 ns
    • 700 ns
    • 750 ns
    • 80 ns
    • 800 ns
Minimum Operating Temperature
    • -20 Cel
    • -40 Cel
    • -50 Cel
    • -55 Cel
    • -65 Cel
    • 0 Cel
Maximum Gate-Emitter Voltage
    • 20 V
Maximum Turn Off Time (toff)
    • 1.6 ns
    • 100 ns
    • 1000 ns
    • 10000 ns
    • 10600 ns
    • 110 ns
    • 11700 ns
    • 12300 ns
    • 1250 ns
    • 12600 ns
    • 1300 ns
    • 1350 ns
    • 1400 ns
    • 14000 ns
    • 1500 ns
    • 15000 ns
    • 1600 ns
    • 16500 ns
    • 1700 ns
    • 1750 ns
    • 1900 ns
    • 1980 ns
    • 2000 ns
    • 2060 ns
    • 2100 ns
    • 2150 ns
    • 2200 ns
    • 2250 ns
    • 2300 ns
    • 2410 ns
    • 2500 ns
    • 255 ns
    • 2600 ns
    • 2610 ns
    • 2710 ns
    • 2730 ns
    • 2800 ns
    • 285 ns
    • 2850 ns
    • 2900 ns
    • 300 ns
    • 3000 ns
    • 3200 ns
    • 3300 ns
    • 3310 ns
    • 3320 ns
    • 3380 ns
    • 3390 ns
    • 3400 ns
    • 3410 ns
    • 3500 ns
    • 3550 ns
    • 3565 ns
    • 3620 ns
    • 3700 ns
    • 3750 ns
    • 3800 ns
    • 3860 ns
    • 3900 ns
    • 400 ns
    • 4000 ns
    • 4020 ns
    • 4180 ns
    • 4200 ns
    • 4300 ns
    • 4350 ns
    • 4400 ns
    • 4500 ns
    • 4700 ns
    • 4750 ns
    • 4800 ns
    • 4850 ns
    • 4900 ns
    • 500 ns
    • 5000 ns
    • 5300 ns
    • 5400 ns
    • 550 ns
    • 5500 ns
    • 6000 ns
    • 6020 ns
    • 6300 ns
    • 6420 ns
    • 650 ns
    • 6500 ns
    • 6600 ns
    • 700 ns
    • 7000 ns
    • 7300 ns
    • 750 ns
    • 7500 ns
    • 7900 ns
    • 8500 ns
    • 90 ns
    • 9400 ns
    • 950 ns
    • 9500 ns
    • 9600 ns
Maximum Gate-Emitter Threshold Voltage
    • 3.9 V
Terminal Finish
    • GOLD
    • Gold (Au)
    • MATTE TIN
    • MATTE TIN OVER NICKEL
    • MATTE TIN/TIN SILVER COPPER
    • Matte Tin (Sn)
    • Matte Tin (Sn) - annealed
    • NICKEL
    • NICKEL PALLADIUM GOLD
    • Nickel/Palladium/Gold (Ni/Pd/Au)
    • SILVER
    • TIN
    • TIN BISMUTH
    • TIN COPPER
    • TIN LEAD
    • TIN SILVER COPPER
    • TIN SILVER COPPER NICKEL
    • Tin (Sn)
    • Tin/Bismuth (Sn/Bi)
    • Tin/Copper (Sn/Cu)
    • Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
    • Tin/Lead (Sn/Pb)
    • Tin/Lead (Sn63Pb37)
    • Tin/Lead (Sn80Pb20)
    • Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Maximum Drain Current (ID)
    • 12 A
Terminal Position
    • BOTTOM
    • DUAL
    • END
    • QUAD
    • RADIAL
    • SINGLE
    • UPPER
    • ZIG-ZAG
JESD-30 Code
    • O-CEDB-N2
    • O-CRDB-G3
    • O-CRFM-F4
    • O-CRPM-F4
    • O-MBCY-W3
    • O-MBFM-D2
    • O-MBFM-P2
    • O-MBFM-X3
    • O-MBPM-D2
    • O-MBPM-W3
    • O-MRDB-F3
    • O-MUFM-D3
    • O-MUPM-D3
    • O-MUPM-D4
    • O-MUPM-P3
    • O-MUPM-W3
    • O-MUPM-X3
    • O-MUPM-X4
    • O-PBCY-T3
    • O-PBCY-W3
    • R-CDFP-F8
    • R-CDIP-T
    • R-CDSO-N4
    • R-CDSO-N6
    • R-CSFM-T3
    • R-GDIP-T16
    • R-MSFM-P3
    • R-PBCC-N3
    • R-PDIP-T14
    • R-PDIP-T16
    • R-PDIP-T18
    • R-PDIP-T20
    • R-PDIP-T8
    • R-PDSO-F3
    • R-PDSO-F4
    • R-PDSO-F5
    • R-PDSO-F6
    • R-PDSO-F8
    • R-PDSO-G10
    • R-PDSO-G16
    • R-PDSO-G18
    • R-PDSO-G2
    • R-PDSO-G3
    • R-PDSO-G4
    • R-PDSO-G5
    • R-PDSO-G6
    • R-PDSO-G8
    • R-PDSO-X5
    • R-PSFM-F3
    • R-PSFM-T11
    • R-PSFM-T12
    • R-PSFM-T14
    • R-PSFM-T2
    • R-PSFM-T3
    • R-PSFM-T4
    • R-PSFM-T5
    • R-PSIP-T10
    • R-PSIP-T12
    • R-PSIP-T14
    • R-PSIP-T3
    • R-PSIP-T4
    • R-PSIP-T8
    • R-PSIP-W3
    • R-PSSO-F3
    • R-PSSO-G2
    • R-PSSO-G3
    • R-PSSO-G4
    • R-PUFM-D11
    • R-PUFM-D15
    • R-PUFM-D17
    • R-PUFM-D3
    • R-PUFM-D4
    • R-PUFM-X11
    • R-PUFM-X15
    • R-PUFM-X19
    • R-PUFM-X3
    • R-PUFM-X4
    • R-PUFM-X5
    • R-PUFM-X6
    • R-PUFM-X7
    • R-PUFM-X9
    • R-PZFM-T3
    • R-XBCC-N3
    • R-XDSO-F6
    • R-XSFM-P3
    • R-XSFM-T3
    • R-XSIP-T3
    • R-XUFM-D4
    • R-XUFM-D6
    • R-XUFM-X3
    • R-XUFM-X4
    • R-XUUC-N3
    • S-CQCC-N20
    • S-MSFM-P3
    • S-PDSO-C3
    • S-PDSO-F4
    • S-PDSO-F8
    • S-PDSO-G8
    • S-PDSO-N3
    • S-PDSO-N6
    • S-XSFM-P3
    • S-XUUC-N2
    • X-XUUC-N
Moisture Sensitivity Level (MSL)
    • 1
    • 3
    • NOT APPLICABLE
Case Connection
    • COLLECTOR
    • EMITTER
    • ISOLATED
Qualification
    • Not Qualified
    • Qualified
Additional Features
    • AVALANCHE RATED
    • BUILT IN BIAS RESISTANCE RATIO
    • BUILT IN BIAS RESISTANCE RATIO IS 0.0067
    • BUILT IN BIAS RESISTANCE RATIO IS 0.01
    • BUILT IN BIAS RESISTANCE RATIO IS 0.02
    • BUILT IN BIAS RESISTANCE RATIO IS 0.05
    • BUILT IN BIAS RESISTANCE RATIO IS 0.06
    • BUILT IN BIAS RESISTANCE RATIO IS 0.075
    • BUILT IN BIAS RESISTANCE RATIO IS 0.11
    • BUILT IN BIAS RESISTOR
    • BUILT IN BIAS RESISTOR RATIO IS 0.03
    • BUILT IN BIAS RESISTOR RATIO IS 0.033
    • BUILT IN BIAS RESISTOR RATIO IS 0.06
    • BUILT-IN ANTISATURATION NETWORK
    • BUILT-IN BIAS RESISTOR
    • BUILT-IN BIAS RESISTOR RATIO IS 0.05
    • BUILT-IN BIAS RESISTOR RATIO IS 1
    • BUILT-IN BIAS RESISTOR RATIO IS 10
    • BUILT-IN BIAS RESISTOR RATIO IS 2.12
    • BUILT-IN BIAS RESISTOR RATIO IS 2.1277
    • BUILT-IN BIAS RESISTOR RATIO IS 3.7
    • BUILT-IN BIAS RESISTOR RATIO IS 4.54
    • BUILT-IN BIAS RESISTOR RATIO IS 4.5455
    • BUILT-IN BIAS RESISTOR, LOGIC LEVEL COMPATIBLE
    • BUILT-IN BIAS RESISTORS
    • BUILT-IN EFFICIENT ANTISATURATION NETWORK
    • FORMED LEAD OPTIONS ARE AVAILABLE
    • FREE WHEELING DIODE
    • HIGH CURRENT DRIVER
    • HIGH RELIABILITY
    • HIGH RELIABLITY
    • HOLLOW-EMITTER
    • HORIZONTAL DEFLECTION OUTPUT
    • LEADFORM OPTIONS ARE AVAILABLE
    • LOGIC COMPATIBLE
    • LOGIC LEVEL COMPATIBLE
    • LOGIC LEVEL COMPATIBLE, BUILT IN BIAS RESISTOR RATIO 3.70
    • LOGIC LEVEL COMPATIBLE, BUILT IN BIAS RESISTOR RATIO IS 1
    • LOGIC LEVEL COMPATIBLE, BUILT-IN BIAS RESISTOR RATIO IS 0.28
    • LOGIC LEVEL COMPATIBLE, BUILT-IN BIAS RESISTOR RATIO IS 1.11
    • LOW NOISE
    • MATCHED PAIRS AVAILABLE
    • MULTIEPITAXIAL PLANAR
    • TR, 7 INCH: 1000
    • TR, 7 INCH; 1000
JEDEC-95 Code
    • MO-153AB
    • MO-187AA
    • MO-235
    • MS-001AC
    • MS-001BB
    • MS-012AC
    • MS-013AB
    • TO-111
    • TO-114
    • TO-116
    • TO-126
    • TO-127
    • TO-18
    • TO-202
    • TO-204
    • TO-204AA
    • TO-204AE
    • TO-204MA
    • TO-205AD
    • TO-213AA
    • TO-218
    • TO-218AC
    • TO-220
    • TO-220AB
    • TO-225
    • TO-225AA
    • TO-226AA
    • TO-243
    • TO-243AA
    • TO-247
    • TO-247AA
    • TO-247AB
    • TO-247AC
    • TO-247AD
    • TO-247AE
    • TO-251
    • TO-251AA
    • TO-252
    • TO-252AA
    • TO-254
    • TO-254AA
    • TO-257
    • TO-257AA
    • TO-261
    • TO-261AA
    • TO-262AA
    • TO-263AA
    • TO-263AB
    • TO-264
    • TO-264AA
    • TO-3
    • TO-39
    • TO-41
    • TO-5
    • TO-53
    • TO-59
    • TO-61
    • TO-63
    • TO-66
    • TO-8
    • TO-92
JESD-609 Code
    • e0
    • e1
    • e2
    • e3
    • e3/e1
    • e4
    • e6
Maximum Time At Peak Reflow Temperature (s)
    • 10
    • 30
    • 40
    • 5
    • NOT APPLICABLE
    • NOT SPECIFIED
Peak Reflow Temperature (C)
    • 225
    • 235
    • 240
    • 245
    • 260
    • NOT APPLICABLE
    • NOT SPECIFIED
Reference Standard
    • AEC-Q101
    • AEC-Q101; IATF 16949
    • AEC-Q101; IATF 16949; MIL-STD-202
    • AEC-Q101; IEC-134
    • AEC-Q101; IEC-60134
    • AEC-Q101; MIL-STD-202
    • ESA/SCC 5201/020; RH - 100K Rad(Si)
    • EUROPEAN SPACE AGENCY
    • EUROPEAN SPACE AGENCY; RH - 100K Rad(Si)
    • EUROPEAN SPACE AGENCY; RH-100K Rad(Si)
    • IATF 16949
    • IEC 60134
    • IEC-134
    • IEC-601134
    • IEC-60134
    • MIL
    • MIL-19500
    • MIL-19500/369C
    • MIL-19500/379F
    • MIL-19500/384D
    • MIL-19500/407D
    • MIL-19500/456D
    • MIL-19500/466B
    • MIL-19500/498
    • MIL-19500/501C
    • MIL-19500/504C
    • MIL-19500/509
    • MIL-19500/523B
    • MIL-19500; RH - 100K Rad(Si)
    • MIL-38535
    • MIL-STD-202
    • TS-16949
    • UL RECOGNIZED
Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

MJE700G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 MHz

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

BUILT IN BIAS RESISTOR

TO-225

e3

MJE800G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 MHz

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

BUILT IN BIAS RESISTOR

TO-225

e3

2SB1259

Allegro MicroSystems

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

100 MHz

30 W

10 A

PLASTIC/EPOXY

SWITCHING

1.5 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

30 W

2000

150 Cel

SILICON

120 V

TIN LEAD

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

MJ10009

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

175 W

20 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

30

200 Cel

SILICON

500 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

235

BD678G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e3

TIP121TU

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

65 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

MJ11033G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

300 W

50 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

400

200 Cel

SILICON

120 V

-55 Cel

TIN SILVER COPPER

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e1

BDW94CFI

STMicroelectronics

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

40 W

12 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

40 W

100

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

MJH6284G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

160 W

20 A

PLASTIC/EPOXY

AMPLIFIER

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

100

150 Cel

400 pF

SILICON

100 V

-65 Cel

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

TIP101G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

80 W

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

200

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

BD675G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

45 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e3

TIP110TU

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

50 W

2 A

PLASTIC/EPOXY

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

BDX33C

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

70 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

100 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

2N6052G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

150 W

12 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

100

200 Cel

SILICON

100 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

BDX34BG

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

70 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

MJF122G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

30 W

5 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

2000

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

UL RECOGNIZED

BU941ZPFI

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

65 W

15 A

PLASTIC/EPOXY

SWITCHING

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

65 W

300

175 Cel

SILICON

350 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

MJ10005

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 MHz

175 W

20 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

40

200 Cel

SILICON

400 V

-65 Cel

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

235

MJH11020G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

150 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

2SB1022

Toshiba

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

7 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e0

BDW46G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

250

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

BDW47G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

250

150 Cel

SILICON

100 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

MJD6039T4G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

20 W

4 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

500

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

MJ10016

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

250 W

50 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

10

200 Cel

SILICON

500 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AE

e0

BD680

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 MHz

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

80 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e0

30

235

MJ10000

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

40

SILICON

350 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

MJ10004

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 MHz

175 W

20 A

METAL

SWITCHING

3 V

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

175 W

40

200 Cel

SILICON

450 V

800 ns

2000 ns

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

MULTIEPITAXIAL PLANAR

TO-3

e0

MJ10007

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

10 MHz

150 W

10 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

30

200 Cel

SILICON

400 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

30

235

BD677G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

TO-225AA

e3

MJD112

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

25 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

235

MJH11020

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

150 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

200 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-218

e0

30

235

MJE802

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

40 W

4 A

PLASTIC/EPOXY

2.5 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

80 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSFM-T3

Not Qualified

BUILT IN BIAS RESISTOR

TO-126

e0

30

235

MJH11019

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

150 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

200 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-218

e0

235

MJD117

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

25 MHz

20 W

2 A

PLASTIC/EPOXY

3 V

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

1.75 W

200

150 Cel

200 pF

SILICON

100 V

TIN LEAD

SINGLE

R-PSSO-G2

1

Not Qualified

e0

235

2N6287G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

160 W

20 A

METAL

AMPLIFIER

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

100

200 Cel

SILICON

100 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

2N6388

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 MHz

45 W

10 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

1000

175 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e0

235

MJD117RLG

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

25 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

200

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e3

30

260

MJE702G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

1 MHz

40 W

4 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

Not Qualified

BUILT IN BIAS RESISTOR

TO-225

e3

NJVMJD128T4G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

4 MHz

20 W

8 A

PLASTIC/EPOXY

AMPLIFIER

4 V

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

1.75 W

100

150 Cel

300 pF

SILICON

120 V

-65 Cel

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

e3

30

260

AEC-Q101

BDX53BFP

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

25 W

8 A

PLASTIC/EPOXY

SWITCHING

2 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

29 W

750

150 Cel

SILICON

80 V

MATTE TIN

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

e3

BDX53BG

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

60 W

8 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

750

150 Cel

SILICON

80 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

LEADFORM OPTIONS ARE AVAILABLE

TO-220AB

e3

MJD112-001

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

25 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

e0

235

MJD117-001

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

25 MHz

20 W

2 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

IN-LINE

Other Transistors

200

150 Cel

SILICON

100 V

TIN LEAD

SINGLE

R-PSIP-T3

1

COLLECTOR

Not Qualified

e0

235

MJH11019G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

150 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

100

150 Cel

SILICON

200 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

MJH6287G

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

160 W

20 A

PLASTIC/EPOXY

AMPLIFIER

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

100

150 Cel

600 pF

SILICON

100 V

-65 Cel

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

TIP140G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

125 W

10 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

500

150 Cel

SILICON

60 V

MATTE TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e3

2STBN15D100

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

70 W

12 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

750

150 Cel

SILICON

100 V

Matte Tin (Sn) - annealed

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

BUILT-IN BIAS RESISTOR

TO-263AA

e3

30

245

2STBN15D100T4

STMicroelectronics

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

YES

70 W

12 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

750

150 Cel

SILICON

100 V

MATTE TIN

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

TO-263AB

e3

30

245

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.