15 A Power Bipolar Junction Transistors (BJT) 541

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BUH150BV

Onsemi

NPN

SINGLE

NO

23 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

4

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6491AU

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDW47AN

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

300 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

FJA4313

Onsemi

NPN

SINGLE

NO

30 MHz

15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

35

150 Cel

SILICON

230 V

SINGLE

R-PSFM-T3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BUH150BC

Onsemi

NPN

SINGLE

NO

23 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

4

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6487G

Onsemi

NPN

SINGLE

NO

5 MHz

30 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

D45VH10AN

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

D45VH10BA

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BUH150BD

Onsemi

NPN

SINGLE

NO

23 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

4

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6487BC

Onsemi

NPN

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJ16010

Onsemi

NPN

SINGLE

NO

175 W

15 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

450 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

BDW42AF

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

200 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

2N6491BG

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

NJL4302DG

Onsemi

PNP

SINGLE WITH BUILT-IN DIODE

NO

35 MHz

200 W

15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

5

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

350 V

TIN

SINGLE

R-PSFM-T5

Not Qualified

HIGH RELIABILITY

TO-264

e3

260

MJ11022G

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

3 MHz

175 W

15 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

100

175 Cel

SILICON

250 V

MATTE TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e3

MJB6488

Onsemi

NPN

SINGLE

YES

5 MHz

75 W

15 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

2

SMALL OUTLINE

Other Transistors

5

150 Cel

SILICON

80 V

Tin/Lead (Sn/Pb)

SINGLE

R-PSSO-G2

1

COLLECTOR

Not Qualified

e0

30

235

2N6491AN

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6487AF

Onsemi

NPN

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDW47DW

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

300 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

BDW42BC

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

200 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

NJL4302D

Onsemi

PNP

SINGLE WITH BUILT-IN DIODE

NO

35 MHz

200 W

15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

5

FLANGE MOUNT

Other Transistors

10

150 Cel

SILICON

350 V

TIN LEAD

SINGLE

R-PSFM-T5

Not Qualified

HIGH RELIABILITY

TO-264

e0

235

BDW42AS

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

200 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

D45VH10AS

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6487AN

Onsemi

NPN

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

MJW3281A

Onsemi

NPN

SINGLE

NO

30 MHz

200 W

15 A

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

12

150 Cel

SILICON

230 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247AD

e0

235

2N6491BA

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6491AS

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BUH150AK

Onsemi

NPN

SINGLE

NO

23 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

4

150 Cel

SILICON

400 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDW46AF

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

300 pF

SILICON

80 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

2N6490BA

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6577

Onsemi

NPN

SINGLE

NO

15 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

100

SILICON

90 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

D45VH10BC

Onsemi

PNP

SINGLE

NO

50 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

20

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6487BA

Onsemi

NPN

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6488BA

Onsemi

NPN

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SB883

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

20 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

2000

SILICON

60 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

BUILT IN BIAS RESISTOR RATIO IS 0.03

TO-218

BDW47BC

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

300 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

BDW47AJ

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

300 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

BDW47AS

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

300 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

2N6490BU

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2SC3256R

Onsemi

NPN

SINGLE

NO

100 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

100

SILICON

60 V

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

SINGLE

R-PSFM-T3

Not Qualified

TO-218

MJW0281A

Onsemi

NPN

SINGLE

NO

30 MHz

150 W

15 A

PLASTIC/EPOXY

AMPLIFIER

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

75

150 Cel

400 pF

SILICON

260 V

-65 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-247

e0

235

2N6490G

Onsemi

PNP

SINGLE

NO

5 MHz

30 W

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

5

150 Cel

SILICON

60 V

TIN

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e3

BDW42BV

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

200 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

2N6490AF

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6491BS

Onsemi

PNP

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

2N6487AJ

Onsemi

NPN

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

SILICON

60 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

BDW47BD

Onsemi

PNP

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

4 MHz

85 W

15 A

PLASTIC/EPOXY

SWITCHING

3 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

1000

150 Cel

300 pF

SILICON

100 V

-55 Cel

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

TO-220AB

e0

2N6488BD

Onsemi

NPN

SINGLE

NO

5 MHz

15 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

5

150 Cel

SILICON

80 V

TIN LEAD

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

e0

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.