60 A Power Bipolar Junction Transistors (BJT) 15

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Terminal Form Package Shape Operating Mode No. of Elements Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Gate-Emitter Voltage Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard

BUTW92

STMicroelectronics

NPN

SINGLE

NO

180 W

60 A

PLASTIC/EPOXY

SWITCHING

1 V

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

Other Transistors

180 W

9

150 Cel

SILICON

250 V

1700 ns

Matte Tin (Sn)

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

MJ10020

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

250 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

75

200 Cel

SILICON

200 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AE

e0

235

MJ14003

Onsemi

PNP

SINGLE

NO

300 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

80 V

Tin/Lead (Sn/Pb)

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

30

235

MJ14002

Onsemi

NPN

SINGLE

NO

300 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

80 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

235

MJ14002G

Onsemi

NPN

SINGLE

NO

300 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

80 V

TIN SILVER COPPER

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e1

MJ10021

Onsemi

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

250 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

75

200 Cel

SILICON

250 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AE

e0

30

235

MJ14001

Onsemi

PNP

SINGLE

NO

300 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

60 V

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e0

235

MJ14003G

Onsemi

PNP

SINGLE

NO

300 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

80 V

TIN SILVER COPPER

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e1

260

MJ14001G

Onsemi

PNP

SINGLE

NO

300 W

60 A

METAL

SWITCHING

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

5

200 Cel

SILICON

60 V

TIN SILVER COPPER

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-204AA

e1

260

BUR51

STMicroelectronics

NPN

SINGLE

NO

16 MHz

350 W

60 A

METAL

SWITCHING

1.5 V

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

350 W

15

200 Cel

SILICON

200 V

1000 ns

2600 ns

TIN

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-3

e3

BUR52

STMicroelectronics

NPN

SINGLE

NO

10 MHz

350 W

60 A

METAL

SWITCHING

1.5 V

PIN/PEG

ROUND

1

2

FLANGE MOUNT

Other Transistors

350 W

15

200 Cel

SILICON

250 V

1000 ns

2600 ns

TIN LEAD

BOTTOM

O-MBFM-P2

COLLECTOR

Not Qualified

TO-3

e0

SGS60DA070D

STMicroelectronics

400 W

60 A

3 V

1

800 ns

BIP General Purpose Power

30

150 Cel

ESM5045DF

STMicroelectronics

175 W

60 A

2 V

1

500 ns

BIP General Purpose Power

150 Cel

ESM5045DV

NXP Semiconductors

NPN

DARLINGTON WITH BUILT-IN DIODE

NO

60 A

PLASTIC/EPOXY

SWITCHING

2 V

SOLDER LUG

RECTANGULAR

1

4

FLANGE MOUNT

SILICON

450 V

UPPER

R-PUFM-D4

Not Qualified

MG60M1AL1

Toshiba

NPN

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

NO

60 A

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

3

FLANGE MOUNT

100

SILICON

450 V

SINGLE

R-PSFM-T3

COLLECTOR

Not Qualified

Power Bipolar Junction Transistors (BJT)

Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.

The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.

Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.