STMicroelectronics - ESM5045DF

  1. Home
  2. STMicroelectronics - ESM5045DF
ESM5045DF by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number ESM5045DF
Description Power Bipolar Transistors; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 60 A; Maximum VCEsat: 2 V; Maximum Operating Temperature: 150 Cel; Maximum Fall Time (tf): 500 ns;
Datasheet ESM5045DF Datasheet
In Stock3,271
NAME DESCRIPTION
Maximum Collector Current (IC): 60 A
Maximum Power Dissipation (Abs): 175 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Power
Maximum VCEsat: 2 V
Maximum Fall Time (tf): 500 ns
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,271 - -

Popular Products

Category Top Products

TIP117 by Crimson Semiconductor

TIP117

Crimson Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; No. of Elements: 1;
BD1396STU by Fairchild Semiconductor

BD1396STU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP122TU by Onsemi

TIP122TU

Onsemi

TIP122TU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 65W in various electronic designs.
TIP110 by Continental Device India

TIP110

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 50 W;
BD13916S by Fairchild Semiconductor

BD13916S

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Transistor Application: SWITCHING;
2SC5200OTU by Fairchild Semiconductor

2SC5200OTU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 17 A;
TIP42C by Baneasa S A

TIP42C

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JEDEC-95 Code: TO-220AB; Qualification: Not Qualified;
TIP41C by Crimson Semiconductor

TIP41C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 100 V;
TIP147 by Continental Device India

TIP147

Continental Device India

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
D44H11 by New Jersey Semiconductor Products

D44H11

New Jersey Semiconductor Products

NPN; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Maximum Collector-Emitter Voltage: 80 V;
TIP122 by Bourns

TIP122

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
BD139-10 by NXP Semiconductors

BD139-10

NXP Semiconductors

BD139-10 by NXP Semiconductors is a power bipolar junction transistor (BJT) with an NPN polarity. It has a max VCEsat of 0.5V and can handle a max collector-emitter voltage of 80V. This transistor is commonly used in amplifier applications due to its high DC current gain and low power dissipation.
BD139-10 by Samsung

BD139-10

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; Minimum DC Current Gain (hFE): 63;
TIP47 by Fairchild Semiconductor

TIP47

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP36C by Continental Device India

TIP36C

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BCP56-16T1G by Onsemi

BCP56-16T1G

Onsemi

BCP56-16T1G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. With a max operating temp of 150°C and hFE of 100, it offers high performance in a compact design.
BD14016STU by Onsemi

BD14016STU

Onsemi

BD14016STU by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 1.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and max power dissipation of 12.5W.
TIP50 by STMicroelectronics

TIP50

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP41C by Secos

TIP41C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP41CG by Onsemi

TIP41CG

Onsemi

TIP41CG by Onsemi is a NPN power BJT with 65W max power dissipation, 100V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. Its package style is flange mount with through-hole terminals.