M/a-com Technology Solutions - JANTXV2N3055

Toshiba's ULN2804APG is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a min DC current gain of 1000x, it can handle up to 0.5A collector current at 50V collector-emitter voltage. This through-hole package with 18 terminals is made of silicon material in a rectangular shape.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: O-MBFM-P2;

The Onsemi BD14016S is a PNP BJT transistor with 80V VCEO, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications, it has a min hFE of 100 and operates up to 150°C. The through-hole package with matte tin finish is suitable for various electronic designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;

PNP; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Terminal Position: SINGLE; Case Connection: ISOLATED;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 100; Terminal Form: THROUGH-HOLE;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500; Terminal Form: THROUGH-HOLE;

The Onsemi BD13910S is a NPN Power BJT with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style suitable for through-hole mounting.

TIP3055G by Onsemi is a NPN BJT transistor with 90W power dissipation, 60V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 5 and fT of 2.5MHz.

NJVMJD340T4G by Onsemi is a NPN BJT transistor with 300V VCEO, 0.5A IC, and 15W Ptot. Ideal for switching applications, it operates b/w -65 to 150 °C and has a hFE of 30. Suitable for surface mount designs in automotive electronics due to AEC-Q101 compliance.

TIP120TU by Onsemi is a NPN power BJT with 65W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is designed for high-power tasks in various electronic circuits.

Power Bipolar Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON; No. of Elements: 1;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 4 A; Maximum VCEsat: 2.5 V;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;