COMMON SOURCE, 2 ELEMENTS Power Field Effect Transistors (FET) 7

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
CSD86311W1723	Texas Instruments	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	1.5 W	PLASTIC/EPOXY	SWITCHING	25 V	BALL	RECTANGULAR	ENHANCEMENT MODE	2	4.5 A	4.5 A	12	GRID ARRAY	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	1.5 W	150 Cel	SILICON	-55 Cel	TIN SILVER COPPER	.051 ohm	4.5 A	BOTTOM	R-PBGA-B12	1		Not Qualified		e1	30	260	13 pF
934064689118	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFM-F4		SOURCE		ESD PROTECTION
934064691112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFM-F4		SOURCE		ESD PROTECTION
BLF7G22L-250P	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4	NOT APPLICABLE	SOURCE	Not Qualified	ESD PROTECTION		NOT SPECIFIED	NOT SPECIFIED
934064689112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFM-F4		SOURCE		ESD PROTECTION
BLF7G22LS-250P	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4	NOT APPLICABLE	SOURCE	Not Qualified	ESD PROTECTION		NOT SPECIFIED	NOT SPECIFIED
934064691118	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFM-F4		SOURCE		ESD PROTECTION

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.