Texas Instruments - CSD86311W1723

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CSD86311W1723 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD86311W1723
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 4.5 A;
Datasheet CSD86311W1723 Datasheet
In Stock27,804
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.5 A
Maximum Pulsed Drain Current (IDM): 4.5 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 12
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B12
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 1.5 W
Maximum Drain-Source On Resistance: .051 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: -296-27599-1-ND
TEXTISCSD86311W1723
296-27599-2
296-27599-1
2156-CSD86311W1723
-CSD86311W1723-NDR
296-27599-6
Maximum Feedback Capacitance (Crss): 13 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 4.5 A
Peak Reflow Temperature (C): 260
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