SEPARATE, 2 ELEMENTS Power Field Effect Transistors (FET) 22

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

DMC1018UPD-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

13 A

25 mJ

9.5 A

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.017 ohm

9.5 A

DUAL

R-PDSO-F6

DRAIN

HIGH RELIABILITY

e3

260

AEC-Q101

DMTH4007SPDQ-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

37.5 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

192 A

20 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0086 ohm

12.5 A

DUAL

R-PDSO-F8

DRAIN

e3

260

84.8 pF

AEC-Q101; IATF 16949; MIL-STD-202

MMSF3P02HDR1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5.6 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.095 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

e0

FW705

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

52 A

6 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.04 ohm

6 A

DUAL

R-PDSO-G8

Not Qualified

NTMD3N08

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.185 ohm

DUAL

R-PDSO-G8

Not Qualified

e0

MMDF2P01HDR1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.2 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

e0

MMSF4P01HDR1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.09 ohm

4 A

DUAL

R-PDSO-G8

Not Qualified

e0

ECH8667-TL-H

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

40 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Bismuth (Sn/Bi)

.039 ohm

5.5 A

DUAL

R-PDSO-F8

1

e6

30

260

STS1DN45K3

STMicroelectronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

450 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

3.8 ohm

.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

40

260

UPA2754GR-E1-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

88 A

12.1 mJ

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0186 ohm

11 A

DUAL

R-PDSO-G8

e6

UPA2754GR-E1-AT

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

88 A

12.1 mJ

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0186 ohm

11 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

UPA2754GR-E2-A

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

88 A

12.1 mJ

11 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0186 ohm

11 A

DUAL

R-PDSO-G8

e6

UPA2754GR(0)-E1-AY

Renesas Electronics

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

88 A

12.1 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0186 ohm

11 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

SSD2011

Samsung

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

SSD2005

Samsung

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

2.3 A

DUAL

R-PDSO-G8

Not Qualified

SSD2015

Samsung

P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

3.2 A

DUAL

R-PDSO-G8

Not Qualified

SSD2003

Samsung

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

SSD2013

Samsung

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

5 A

DUAL

R-PDSO-G8

Not Qualified

SSD2004

Samsung

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.125 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

SSD2002

Samsung

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.1 ohm

3.5 A

DUAL

R-PDSO-G8

Not Qualified

SSD2009

Samsung

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.13 ohm

3 A

DUAL

R-PDSO-G8

Not Qualified

SSD2007

Samsung

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

2 W

PLASTIC/EPOXY

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.3 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.