STMicroelectronics - STS1DN45K3

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STS1DN45K3 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STS1DN45K3
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; No. of Elements: 2; Maximum Drain-Source On Resistance: 3.8 ohm;
Datasheet STS1DN45K3 Datasheet
In Stock1,709
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .5 A
Maximum Pulsed Drain Current (IDM): 2 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.7 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3.8 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 450 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .5 A
Peak Reflow Temperature (C): 260
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