SINGLE WITH BUILT-IN MOSFET AND DIODE Power Field Effect Transistors (FET) 1

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Part	RoHS	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Maximum Collector Current (IC)	Package Body Material	Transistor Application	Maximum Rise Time (tr)	Maximum VCEsat	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Fall Time (tf)	Maximum Drain Current (Abs) (ID)	Nominal Turn Off Time (toff)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Minimum DC Current Gain (hFE)	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Maximum Gate-Emitter Threshold Voltage	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Nominal Turn On Time (ton)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDMS1D2N03DSD		Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN MOSFET AND DIODE	YES	26 W		PLASTIC/EPOXY	SWITCHING			30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1		362 A	121 mJ		70 A		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			150 Cel	SILICON		-55 Cel			MATTE TIN	.00325 ohm	70 A	DUAL	R-PDSO-N8	1				MO-229	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.