105 W Power Field Effect Transistors (FET) 65

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SK3573-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	105 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A							10	260
2SK3575-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	325 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0064 ohm	83 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified		e0
2SK3575-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	325 mJ	83 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0064 ohm	83 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	TO-262AA	e0
2SK3575	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A	325 mJ	83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0064 ohm	83 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	TO-220AB	e0
2SK3573-ZK-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	105 W							1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A							NOT SPECIFIED	NOT SPECIFIED
2SK3573-ZK-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A		83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.006 ohm	83 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified	TO-263	e6		260
2SK3575-Z-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	105 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A							10	260
2SK3573-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A		83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.006 ohm	83 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified		e0
2SK3575-ZK-AZ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	325 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.0064 ohm	83 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified	TO-263	e6
2SK3573	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A		83 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.006 ohm	83 A	SINGLE	R-PSFM-T3	DRAIN	Not Qualified	TO-220AB	e0
2SK3573-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	105 W							1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A							10	260
2SK3575-AZ	Renesas Electronics	N-CHANNEL	SINGLE	NO	105 W							1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A							10	260
2SK3573-ZK-E1-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	105 W							1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A							NOT SPECIFIED	NOT SPECIFIED
2SK3573-ZK	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A		83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.006 ohm	83 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified	TO-263	e0
2SK3573-S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	105 W	PLASTIC/EPOXY	SWITCHING	20 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	332 A		83 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.006 ohm	83 A	SINGLE	R-PSIP-T3	DRAIN	Not Qualified	TO-262	e0
2SK3573-ZK-E2-AY	Renesas Electronics	N-CHANNEL	SINGLE	YES	105 W						ENHANCEMENT MODE	1			83 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				83 A
2SK3575-ZK	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	105 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	332 A	325 mJ	83 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0064 ohm	83 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified	TO-263

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.