105 W Power Field Effect Transistors (FET) 65

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK7Y18-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

49 A

1

e3

30

260

BUK7Y12-55B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

61.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

61.8 A

1

e3

30

260

STK130N4LF7AG

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

250 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.006 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

33 pF

AEC-Q101

STP32N05L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

128 A

200 mJ

32 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.055 ohm

32 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP30N06

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

160 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

110 W

175 Cel

SILICON

330 ns

MATTE TIN

.05 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

200 pF

STP32N06L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

128 A

180 mJ

32 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.055 ohm

32 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STP20N10L

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

120 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

110 W

175 Cel

SILICON

245 ns

TIN LEAD

.12 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

90 pF

STP30N05

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

180 mJ

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

110 W

175 Cel

SILICON

330 ns

MATTE TIN

.05 ohm

30 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

200 pF

STP20N10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

60 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.12 ohm

20 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

BUK7Y08-40B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

260

BUK9524-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.026 ohm

46 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK9624-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

46 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.026 ohm

46 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK7Y07-30B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

260

BUK9524-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

46 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.026 ohm

46 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK9624-55A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

46 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.026 ohm

46 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK9Y07-30B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

105 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

260

IPI80N06S3L-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

170 mJ

80 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0079 ohm

80 A

SINGLE

R-PSIP-T3

1

Not Qualified

AVALANCHE RATED

TO-262AA

e3

260

IRFH5204TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

102 mJ

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0043 ohm

22 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

IRFH5207TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

285 A

87 mJ

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0096 ohm

13 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

IPB80N06S3L-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

320 A

170 mJ

80 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0076 ohm

80 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

IRFH5207TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

285 A

87 mJ

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0096 ohm

13 A

DUAL

R-PDSO-N5

1

DRAIN

Not Qualified

e3

IPP80N06S3L-08

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

105 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

170 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0079 ohm

80 A

SINGLE

R-PSFM-T3

1

Not Qualified

AVALANCHE RATED

TO-220AB

e3

260

NP90N055VUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N04VUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N04VLG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP60N04VUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

105 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP90N03VHG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N03VHG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP60N04MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N055VUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

105 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP90N04VUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N04VDG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP60N055VUK-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

105 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP90N03VUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

168 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

e3

NP60N055NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP90N06VLG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N04VDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N03VUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

168 mJ

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0032 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N055VDG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N04VLG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.004 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N06VLG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

180 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0078 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP90N055VUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP60N03SUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0038 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

NOT SPECIFIED

NOT SPECIFIED

NP60N04VUK-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

105 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N03SUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0038 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e3

NP90N055VDG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

105 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

90 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.006 ohm

90 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-252

NOT SPECIFIED

NOT SPECIFIED

NP60N04NUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NP60N055MUK-S18-AY

Renesas Electronics

N-CHANNEL

SINGLE

NO

105 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.