106 W Power Field Effect Transistors (FET) 46

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

PSMN020-100YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

43 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

43 A

1

e3

30

260

PSMN2R4-30YLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

FCD380N60E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30.6 A

211.6 mJ

10.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.38 ohm

10.2 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

PSMN4R0-40YS,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

472 A

77 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0042 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

MO-235

e3

30

260

PSMN2R2-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN2R6-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN020-100YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

172 A

71 mJ

43 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0205 ohm

43 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

FDMS4D0N12C

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

120 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

628 A

222 mJ

114 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

57 ns

-55 Cel

114 ns

MATTE TIN

.004 ohm

114 A

DUAL

S-PDSO-N5

1

DRAIN

MO-240AA

e3

30

260

24 pF

PSMN4R0-40YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

472 A

77 mJ

100 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0042 ohm

100 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

BUK9Y19-75B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

48.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

48.2 A

1

e3

30

260

PSMN8R5-60YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

76 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

76 A

1

e3

30

260

NVMJS1D7N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0017 ohm

185 A

DUAL

R-PDSO-X5

1

DRAIN

e3

30

260

45 pF

AEC-Q101

FCP380N60E

Onsemi

N-CHANNEL

SINGLE

NO

106 W

1

10.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

10.2 A

e3

NOT SPECIFIED

NOT SPECIFIED

NTMJS1D7N04CTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-X5

1

DRAIN

e3

30

260

45 pF

FCP380N60

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

30.6 A

211.6 mJ

10.2 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.38 ohm

10.2 A

SINGLE

R-PSFM-T3

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

NVMFS5C430NAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

45 pF

AEC-Q101

NTD250N65S3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

650 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

36 A

108 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.25 ohm

13 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

NVMFS5C430NWFAFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

45 pF

AEC-Q101

NVMFS5C430NWFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

45 pF

AEC-Q101

NTMFS5C430NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NVMFS5C430NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

45 pF

AEC-Q101

NTMFS5C430NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

NVMFS5C430NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

45 pF

AEC-Q101

NVMFS5C430NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

338 mJ

185 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0017 ohm

185 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

45 pF

AEC-Q101

PSMN8R5-60YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

303 A

97 mJ

76 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.008 ohm

76 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

BUK7624-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

47 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.024 ohm

47 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

245

PSMN013-80YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

60 A

1

e3

30

260

BUK9560-100A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

106 A

30 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.067 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BUK9560-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

106 A

30 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.067 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BUK9Y12-55B,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

61.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

61.8 A

1

e3

30

260

BUK7560-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

106 A

110 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.06 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BUK9660-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

106 A

30 mJ

26 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.067 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK7560-100A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

106 A

110 mJ

26 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.06 ohm

26 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

BUK7524-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

47 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.024 ohm

47 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7524-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

188 A

76 mJ

47 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.024 ohm

47 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK9660-100A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

106 A

30 mJ

26 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.067 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK7660-100A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

106 A

110 mJ

26 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.06 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK7660-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

106 A

110 mJ

26 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.06 ohm

26 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PSMN013-80YS

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

233 A

70 mJ

60 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.00129 ohm

60 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

IPB60R105CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

79 A

93 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.105 ohm

21 A

SINGLE

R-PSSO-G2

1

DRAIN

HIGH RELIABILITY

TO-263AB

e3

IPP60R105CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

93 mJ

21 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.105 ohm

21 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPW60R105CFD7

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

93 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.105 ohm

21 A

SINGLE

R-PSFM-T3

TO-247

e3

IPP60R105CFD7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

93 mJ

21 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.105 ohm

21 A

SINGLE

R-PSFM-T3

DRAIN

TO-220AB

e3

IPW60R105CFD7XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

106 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

93 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.105 ohm

21 A

SINGLE

R-PSFM-T3

TO-247

e3

BUK6Y15-40P

Nexperia

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

252 A

5.8 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.015 ohm

63 A

SINGLE

R-PSSO-G4

DRAIN

MO-235

199 pF

AEC-Q101; IEC-60134

PSMN1R5-25MLH

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

106 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

687 A

330 mJ

150 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0027 ohm

150 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

552 pF

IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.