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Manufacturer | Nexperia |
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Manufacturer's Part Number | BUK6Y15-40P |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 106 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR; |
Datasheet | BUK6Y15-40P Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 63 A |
Maximum Pulsed Drain Current (IDM): | 252 A |
Surface Mount: | YES |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | 106 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .015 ohm |
Avalanche Energy Rating (EAS): | 5.8 mJ |
Maximum Feedback Capacitance (Crss): | 199 pF |
JEDEC-95 Code: | MO-235 |
Polarity or Channel Type: | P-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 40 V |
Reference Standard: | AEC-Q101; IEC-60134 |