121 W Power Field Effect Transistors (FET) 13

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
FQP50N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	121 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	990 mJ	52.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	820 ns	-55 Cel	470 ns	MATTE TIN	.025 ohm	52.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3			120 pF
FQP50N06L-EPKE0003	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	121 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	990 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	820 ns	-55 Cel	470 ns		.025 ohm	52.4 A	SINGLE	R-PSFM-T3					TO-220AB				120 pF
FQB50N06LTM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	990 mJ	52.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.025 ohm	52.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
NTMFSS0D9N03P8T1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			275 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			1.2 ohm	275 A	DUAL	R-PDSO-N3		SOURCE
NTMFSS0D9N03P8T3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			275 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			1.2 ohm	275 A	DUAL	R-PDSO-N3		SOURCE
NTMFSS0D9N03P8	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1			275 A	3	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0012 ohm	43 A	TRIPLE	R-PTSO-N3	1	SOURCE				e3	30	260	370 pF
PSMN1R3-30YL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	121 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					TIN		100 A			1					e3	30	260
PSMN1R2-25YL,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	815 A	677 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.00185 ohm	100 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3	30	260
PSMN1R2-25YL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	815 A	677 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.00185 ohm	100 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3	30	260
PSMN1R3-30YL	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	121 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	923 A	383 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.00195 ohm	100 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified			e3	30	260
IRLW540A	Samsung	N-CHANNEL	SINGLE	YES	121 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							28 A
IRL540A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	121 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	98 A	522 mJ	28 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.058 ohm	28 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLI540A	Samsung	N-CHANNEL	SINGLE	NO	121 W						ENHANCEMENT MODE	1			28 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel							28 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.