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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | NTMFSS0D9N03P8T1G |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 121 W; JESD-30 Code: R-PDSO-N3; Maximum Drain Current (Abs) (ID): 275 A; |
| Datasheet | NTMFSS0D9N03P8T1G Datasheet |
| In Stock | 334 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 275 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Maximum Power Dissipation (Abs): | 121 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 275 A |
| Case Connection: | SOURCE |
| Maximum Drain-Source On Resistance: | 1.2 ohm |
