125 W Power Field Effect Transistors (FET) 1,091

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IXTE10N60X4U

Littelfuse

125 W

4

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

FMM60-02TF

Littelfuse

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

150 A

1000 mJ

33 A

5

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.04 ohm

33 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

IXTL350

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

IXTE9N65X4U

Littelfuse

125 W

4

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9 A

e0

IXTE14N40X4U

Littelfuse

125 W

4

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

IXFL150

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

25 A

e0

IXTE25N20X4U

Littelfuse

125 W

4

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

25 A

e0

IXTL9N65

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

9 A

e0

FMP26-02P

Littelfuse

N-CHANNEL AND P-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

120 A

1000 mJ

26 A

5

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

.06 ohm

26 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

e1

NOT SPECIFIED

NOT SPECIFIED

UL RECOGNIZED

IXTE12N50X4U

Littelfuse

125 W

4

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12 A

e0

IXTE7C65X4U

Littelfuse

125 W

4

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

7 A

e0

IXFL250

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

25 A

e0

IXTS10N65

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

IXTL150

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

25 A

e0

FMP36-015P

Littelfuse

N-CHANNEL AND P-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

2

150 A

1000 mJ

36 A

5

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.04 ohm

36 A

SINGLE

R-PSIP-T5

ISOLATED

Not Qualified

AVALANCHE RATED

e1

UL RECOGNIZED

IXTE10C50X4U

Littelfuse

125 W

4

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

10 A

e0

IXTP8N45MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

IXTP8N45MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

IXTP4N80A

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

IXTP30N08MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

30 A

e0

IXTP22N15MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

22 A

e0

IXTP4N90

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

IXTP8N50MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

IXTP4N100A

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

IXTP22N15MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

22 A

e0

IXTP30N10MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

30 A

e0

IXTP4N80

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

IXTP7N50A

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7 A

e0

IXTP15N30MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXTP7N45

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7 A

e0

IXTP15N25MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXTP8N50MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

IXTP30N10MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

30 A

e0

IXTP2R4N120P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

6 A

200 mJ

2.4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

2.4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IXTP15N25MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IXTP4N90A

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4 A

e0

IXTA3N100P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

1000 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

200 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

4.8 ohm

3 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

10

260

IXTP22N20MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

22 A

e0

IXTP4N100

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

100 ns

-65 Cel

160 ns

Tin/Lead (Sn/Pb)

4 ohm

4 A

SINGLE

R-PSFM-T3

TO-220AB

e0

60 pF

IXTP30N08MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

30 A

e0

IXTP7N50

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7 A

e0

IXTJ6N150

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

500 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

3.85 ohm

3 A

SINGLE

R-PSFM-T3

ISOLATED

AVALANCHE RATED

TO-247

64 pF

IXTP22N20MA

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

22 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

22 A

e0

IXTP7N45A

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7 A

e0

IXTP15N30MB

Littelfuse

N-CHANNEL

SINGLE

NO

125 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

SSH6N60

Samsung

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

570 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

210 ns

320 ns

1.8 ohm

6 A

SINGLE

R-PSFM-T3

Not Qualified

150 pF

SSP6N60A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

570 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

210 ns

320 ns

TIN LEAD

1.2 ohm

6 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

150 pF

SSH6N55A

Samsung

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

550 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

570 mJ

6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 W

150 Cel

SILICON

210 ns

320 ns

TIN LEAD

1.2 ohm

6 A

SINGLE

R-PSFM-T3

Not Qualified

e0

150 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.