125 W Power Field Effect Transistors (FET) 1,091

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDMS86101DC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

216 mJ

60 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0075 ohm

14.5 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

NOT SPECIFIED

NOT SPECIFIED

IRF9640STRLPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

700 mJ

11 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

10

260

IRF740PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

520 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

FDMS86300DC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

260 A

240 mJ

60 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0031 ohm

24 A

DUAL

R-PDSO-F5

1

DRAIN

ULTRA LOW RESISTANCE

MO-240AA

e3

30

260

IRF640PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

580 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.18 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

30

260

BSC600N25NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

250 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

100 A

210 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.06 ohm

25 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

30

260

FQB22P10TM

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

710 mJ

22 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.125 ohm

22 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

245

IRF840PBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.85 ohm

8 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

e3

BSC030P03NS3GAUMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

345 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

199 ns

-55 Cel

197 ns

TIN

.0046 ohm

25.4 A

DUAL

R-PDSO-N8

3

DRAIN

Not Qualified

e3

520 pF

STP11NK50Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

190 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.52 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

AUIRF7759L2TR

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

640 A

257 mJ

375 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0023 ohm

26 A

BOTTOM

R-XBCC-N9

1

DRAIN

AEC-Q101

AUIRF7759L2TR1

International Rectifier

N-CHANNEL

SINGLE

YES

125 W

1

375 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

375 A

NVMFD5C650NLWFT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

502 A

186 mJ

111 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0058 ohm

21 A

DUAL

R-PDSO-F8

1

DRAIN

e3

30

260

AEC-Q101

IRF7749L1TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

1

375 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

375 A

1

IRF640

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

580 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.18 ohm

18 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

BSC320N20NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

144 A

190 mJ

36 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.032 ohm

36 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

260

4 pF

IEC-61249-2-21

IRF840PBF-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.85 ohm

8 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

120 pF

IRF840SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.85 ohm

8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

30

260

IRF7759L2TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

640 A

257 mJ

113 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.0023 ohm

26 A

BOTTOM

R-XBCC-N9

1

DRAIN

Not Qualified

e1

30

260

VNB35N07-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

.035 ohm

SINGLE

R-PSSO-G2

NOT SPECIFIED

NOT SPECIFIED

AEC-Q101

BSC030P03NS3GXT

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

345 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

199 ns

-55 Cel

197 ns

.0046 ohm

25.4 A

DUAL

R-PDSO-N8

DRAIN

NOT SPECIFIED

NOT SPECIFIED

520 pF

BSC060N10NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

360 A

230 mJ

90 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.006 ohm

14.9 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

260

IRF840APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

510 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.85 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

30

260

8 pF

IRF740SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

520 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-263AB

e3

30

260

BSC190N15NS3GATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

150 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

170 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.019 ohm

50 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

IRF740APBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

630 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

10 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

IRF740ASPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

400 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

40 A

630 mJ

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.55 ohm

10 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

IRFBG30PBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

280 mJ

3.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

5 ohm

3.1 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

30

260

50 pF

IRF9640PBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

700 mJ

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn)

.5 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-220AB

e3

30

260

SPP11N60C3XKSA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

33 A

340 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

79 ns

TIN

.38 ohm

11 A

SINGLE

R-PSFM-T3

AVALANCHE RATED

TO-220AB

e3

30 pF

IRF740LCPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

520 mJ

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.55 ohm

10 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

18 pF

FDMS86200DC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

150 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

294 mJ

28 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.017 ohm

9.3 A

DUAL

R-PDSO-F5

1

DRAIN

MO-240AA

e3

30

260

IRF740ALPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

40 A

630 mJ

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.55 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

Not Qualified

TO-262AA

e3

30

260

BSC030P03NS3G

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

345 mJ

100 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

199 ns

-55 Cel

197 ns

TIN

.0046 ohm

25.4 A

DUAL

R-PDSO-N8

3

DRAIN

Not Qualified

e3

260

520 pF

IRF840LCPBF

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

510 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.85 ohm

8 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

30

260

18 pF

IRF9640SPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.5 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

STL140N6F7

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

560 A

38 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0028 ohm

140 A

DUAL

R-PDSO-F5

1

DRAIN

BULK: 3000

e3

260

193 pF

CSD19531Q5A

Texas Instruments

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

337 A

180 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0078 ohm

16 A

DUAL

R-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

16.9 pF

IRF7759L2TR1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

75 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

640 A

257 mJ

113 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.0023 ohm

26 A

BOTTOM

R-XBCC-N9

1

DRAIN

Not Qualified

e1

FQB22P10TM_F085

Fairchild Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

710 mJ

22 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.125 ohm

22 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

FQB22P10TM-F085

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

88 A

710 mJ

22 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.125 ohm

22 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

30

245

IPD90P04P4-05

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

360 A

60 mJ

90 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0047 ohm

90 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

260

IRF7769L1TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

500 A

260 mJ

375 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

3.3 W

175 Cel

SILICON

-55 Cel

.0035 ohm

375 A

BOTTOM

R-XBCC-N3

1

DRAIN

VNB35N07TR-E

STMicroelectronics

N-CHANNEL

COMPLEX

YES

125 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

35 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

800 ns

1350 ns

Matte Tin (Sn) - annealed

.035 ohm

SINGLE

R-PSSO-G2

1

e3

30

245

AEC-Q101

IRF7769L2TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

500 A

260 mJ

395 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.0035 ohm

20 A

BOTTOM

R-XBCC-N9

DRAIN

Not Qualified

e1

STP5NK100Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14 A

250 mJ

3.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3.7 ohm

3.5 A

SINGLE

R-PSFM-T3

Not Qualified

AVALANCHE RATED

TO-220AB

e3

IRF7749L2TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

125 W

UNSPECIFIED

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

800 A

260 mJ

375 A

9

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN SILVER COPPER

.0015 ohm

33 A

BOTTOM

R-XBCC-N9

1

DRAIN

Not Qualified

e1

IRFB7545PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

125 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

380 A

235 mJ

95 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0059 ohm

95 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

230 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.