131 W Power Field Effect Transistors (FET) 9

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
PSMN2R6-40YS,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	131 W						ENHANCEMENT MODE	1			100 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			TIN		100 A			1				e3	30	260
RFP50N06	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	131 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Matte Tin (Sn) - annealed	.022 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
PSMN2R6-40YS	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	131 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	651 A	179 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		Tin (Sn)	.0028 ohm	100 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified	MO-235	e3	30	260
MSC400SMA330B4	Microchip Technology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	131 W	PLASTIC/EPOXY	SWITCHING	3300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	27 A			4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON CARBIDE	-55 Cel		.52 ohm	11 A	SINGLE	R-PSFM-T4		DRAIN		TO-247				2 pF
NVMFS005N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	131 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	695 A	365 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0051 ohm	108 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260	22 pF	AEC-Q101
RFP50N06_NL	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	131 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			50 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.022 ohm	50 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	TO-220AB	e3
NVMYS005N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	131 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	674 A		109 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel		.005 ohm	109 A	SINGLE	R-PSSO-G4		DRAIN				NOT SPECIFIED	NOT SPECIFIED	21 pF	AEC-Q101
NVMFWS005N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	131 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	695 A	365 mJ		6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0051 ohm	108 A	DUAL	R-PDSO-F6	1	DRAIN			e3	30	260	22 pF	AEC-Q101
IRFP140A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	131 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	513 mJ	31 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.052 ohm	31 A	SINGLE	R-PSIP-T3			Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.